Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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HYB25D512160BE-6 by Infineon Technologies is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates at a max clock frequency of 166 MHz and has a memory density of 536870912 bits. This memory module is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
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The plastic/epoxy package body material ensures durability and protection for the DRAM, making it a reliable and long-lasting choice.
The surface mount feature allows for easy installation and compatibility with various devices, making it convenient for integration into different applications.
With a single function, this DRAM simplifies the design and implementation process, making it efficient and straightforward to use.
The rectangular package shape provides compatibility with standard sockets and connectors, allowing for easy installation and interchangeability in different systems.
The synchronous operating mode ensures efficient and coordinated data transfers, enhancing the overall performance and speed of the DRAM.
The self-refresh capability eliminates the need for external refresh signals and reduces power consumption, making it energy-efficient and suitable for battery-powered devices.
The common input/output type simplifies communication and compatibility between the DRAM and other components, enhancing interoperability and ease of use.
The nominal supply voltage of 2.5V ensures proper and stable operation of the DRAM, making it reliable and suitable for various applications.
With a single power supply voltage of 2.5V, the DRAM simplifies the power management system and reduces complexity, enhancing overall efficiency.
Having 66 terminals facilitates easy connectivity and integration of the DRAM into different systems, providing versatility and flexibility in design.
The small outline and thin profile package style maximize space utilization and allow for compact designs, making it ideal for devices with limited space.
The DRAM's ability to operate at a maximum temperature of 70°C ensures reliability and stability even under demanding conditions, making it suitable for various environments.
The organization of 32MX16 provides a high memory capacity and efficient data handling, making it suitable for data-intensive applications and multitasking scenarios.
The 3-STATE output characteristics offer versatility and flexibility in controlling data flow, enabling efficient integration into different digital systems.
The DRAM's ability to operate at a minimum temperature of 0°C ensures reliable performance in colder environments, expanding its range of applications.
The matte tin terminal finish offers excellent electrical conductivity and corrosion resistance, ensuring reliable connections and prolonging the lifespan of the DRAM.
Having dual terminal positions allows for flexible PCB layout and easy assembly, enhancing ease of use and installation in different systems.
With a single port, this DRAM simplifies data access and management, providing efficient operation and reducing complexity in system design.
The maximum seated height of 1.2mm ensures compatibility with low-profile applications, enabling seamless integration into space-constrained devices.
With a maximum clock frequency of 166MHz, this DRAM delivers fast data processing and transfer rates, enhancing system performance and responsiveness.
The compact width of 10.16mm allows for efficient space utilization in PCB designs, making it suitable for compact devices and systems.
The minimum supply voltage of 2.3V ensures reliable operation even with lower power sources, providing stability and flexibility in various power configurations.
The length of 22.22mm provides compatibility with standard PCB dimensions, facilitating easy integration and reducing design constraints.
The commercial temperature grade ensures reliable operation within the specified temperature range, making it suitable for general-purpose applications in commercial settings.
The four bank page burst access mode allows for efficient data retrieval and processing, enhancing overall system performance and responsiveness.
Built with CMOS technology, this DRAM offers low power consumption, high noise immunity, and compatibility with a wide range of digital systems.
The gull wing terminal form provides mechanical stability and secure solder connections, ensuring reliable electrical performance in various operating conditions.
With a high number of words, this DRAM offers a large memory capacity, making it suitable for applications with extensive data storage and processing requirements.
The availability of sequential burst length options allows for efficient data transfer and retrieval, providing versatility and compatibility with different system requirements.
The memory width of 16 bits enables efficient data processing and storage, offering a balance between capacity and speed in various applications.
The terminal pitch of 0.65mm allows for precise and reliable electrical connections, ensuring optimal data transfer rates and system performance.
The use of a 32M words code indicates the high memory capacity of this DRAM, making it suitable for data-intensive applications and multitasking scenarios.
With a maximum supply voltage of 2.7V, this DRAM provides flexibility and compatibility with different power supply configurations, enhancing reliability and versatility.
The high memory density of 536870912 bits offers substantial data storage capacity, making it suitable for demanding applications that require extensive memory resources.
Being a DDR1 DRAM, this memory IC type offers high-speed operation and efficient data handling, making it a reliable choice for various computing and multimedia applications.
The low standby current of 0.004 Amp minimizes power consumption during idle periods, contributing to energy efficiency and prolonging battery life.
The refresh cycles of 8192 ensure data integrity and prevent data loss, making it suitable for continuous and reliable operation over extended periods.
The availability of interleaved burst length options enhances data transfer efficiency and performance, allowing for seamless integration into different system architectures.
The quick maximum access time of 0.7 ns ensures rapid data retrieval and processing, contributing to overall system responsiveness and performance.
DRAM HYB25D512160BE-6 attributes and parameters. Explore more DRAM devices from Infineon Technologies
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HYB25D512160BE-6 Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.28
SB
8542.32.00.15
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LL4148
Itt Components
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .005 us; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Non Repetitive Peak Forward Current: 1 A;
BAV99
ROHM
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
1N4148
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM7805CT
Silicon Group
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);
CRG0805F10K
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
SS495A-SP
Honeywell Sensing And Control
SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.
ATMEGA328P-AU
Microchip Technology
ATMEGA328P-AU by Microchip: 8-bit RISC CPU, 20 MHz clock, 23 I/O lines. Ideal for industrial applications with SPI, TWI, USART connectivity and low power mode. Features include 2048 RAM bytes, 1024 EEPROM size, and 16384 ROM words.
LM317TG
Texas Instruments
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
08055C104KAT2A
KYOCERA AVX
08055C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
TCA6424ARGJR
TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.
CDSOT23-SM712
Bourns
Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.
IRLML6401TRPBF
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
LM107H/883C
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;
SS14
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Cheng-yi Electronic
Nexperia
MT47H64M16HR-25EIT
Micron Technology
Micron Technology's MT47H64M16HR-25EIT is a DDR2 DRAM with 64MX16 organization, operating at 1.55V. It features synchronous operation, self-refresh capability, and a memory density of 1073741824 bits. Ideal for industrial applications requiring fast access times and multi-bank page burst access mode.
MT47H32M16NF-25EAAT:H
Micron Technology's MT47H32M16NF-25EAAT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, industrial temperature grade, and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive and industrial environments.
MT48LC4M16A2B4-6AIT:J
Micron Technology's MT48LC4M16A2B4-6AIT:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.
MT46H32M16LFBF-5IT:CTR
MT46H32M16LFBF-5IT:CTR by Micron Technology is a 32MX16 LPDDR1 DRAM with 536870912 bit memory density. It operates at 1.8V, has a peak reflow temp of 260°C, and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring fast access times and low power consumption.
KM48V2104BK-6
Samsung
Samsung's KM48V2104BK-6 is a 2MX8 EDO DRAM with 3.3V supply, operating in FAST PAGE mode with 60ns access time. It features 28 terminals in a small outline package suitable for commercial temperature applications. With a memory density of 16Mbit and 2048 refresh cycles, it offers high-speed data storage solutions.
MT40A512M16LY-062EIT:E
Micron Technology's MT40A512M16LY-062EIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.
K4S643232H-UC60
Samsung's K4S643232H-UC60 is a 2MX32 DRAM with 86 terminals, operating at 166 MHz. It features a small outline package and thin profile, suitable for applications requiring high memory density and fast access times up to 5.5 ns. Ideal for commercial-grade devices needing synchronous memory technology.
MT40A1G8SA-062EAAT:E
Micron Technology's MT40A1G8SA-062EAAT:E is a DDR4 DRAM with 1.2V supply, 1600MHz clock frequency, and 1GX8 organization. It operates synchronously in common I/O mode for automotive applications at temperatures ranging from -40 to 105°C.
IS42S16400J-6BLI
Integrated Silicon Solution
IS42S16400J-6BLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with a max clock frequency of 166 MHz. It operates in an industrial temperature grade range and has a memory density of 67108864 bits. This memory IC type is commonly used in applications requiring high-speed data storage and retrieval.
MT48LC4M32B2P-6:GTR
Micron Technology's MT48LC4M32B2P-6:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, offering 134217728-bit memory density and 5.5ns max access time. Ideal for commercial applications requiring fast and efficient memory operations in a compact small outline package.
MT41J64M16JT-15EAIT:G
Micron Technology's MT41J64M16JT-15EAIT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K512M16HA-107AIT:A
Micron Technology's MT41K512M16HA-107AIT:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in automotive or industrial settings.
MT48LC2M32B2P-6:G
Micron Technology's MT48LC2M32B2P-6:G is a 2MX32 Synchronous DRAM with 67108864-bit memory density. It operates at 166 MHz clock frequency, suitable for commercial applications requiring fast access time of 5.5 ns and common I/O type. The small outline package with 0.5 mm terminal pitch makes it ideal for space-constrained designs.
KM48C8000AS-6
Samsung's KM48C8000AS-6 is an 8MX8 DRAM with 8388608 words, operating at 5V. It features a fast page access mode with EDO technology and has a memory density of 67108864 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
MT48LC8M16A2P-75IT:G
Micron Technology's MT48LC8M16A2P-75IT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 133MHz clock frequency. It features self-refresh mode, common I/O type, and industrial temperature grade. Ideal for applications requiring fast memory access and high data density in compact designs.
NT5CC64M16GP-DII
Nanya Technology
NT5CC64M16GP-DII by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
M378T2863QZS-CF7
Samsung M378T2863QZS-CF7 DDR DRAM Module has 128MX64 organization, operates at 400 MHz with 1.8V supply voltage. Ideal for high-speed data processing in computing applications due to its synchronous operation and 64 memory width.
AS4C512M16D3LC-12BCNTR
Alliance Memory
Alliance Memory's AS4C512M16D3LC-12BCNTR is a DDR3L DRAM with 512MX16 organization, operating at up to 800 MHz. Featuring common I/O type and self-refresh mode, it offers 8192 refresh cycles and supports multi-bank page burst access. Ideal for applications requiring high-speed synchronous memory with low power consumption.
MT41K128M16JT-125XIT:K
Micron Technology's MT41K128M16JT-125XIT:K is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile packages.
MT53E1536M32D4DT-046WT:A
LPDDR4 DRAM;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
HYB25D512160BE-6
Qimonda Ag
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
HYB25D128323CL3.6
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 128; Package Code: LFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;
HYB25D128160AT-7
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
HYB25D128160CE-6
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
HYB25D128323C-4.5
HYB25D128160ATL-8
HYB25D128323CL4.5
HYB25D128160AE-7
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 22.22 mm;
HYB25D128160CT-5
HYB25D128160AT-8
HYB25D128160CT-6
HYB25D128323C-3.6
HYB25D128160ATL-7
HYB25D128323C-5
HYB25D128160AT-6
HYB25D128323C-3
HYB25D128160CE-5
HYB25D128160AE-6
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;
HYB25D128160AE-8
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH;
HYB25D512160CFL-5
DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
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