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IS42S16400J-6BLI-TR

Integrated Silicon Solution

IS42S16400J-6BLI-TR by Integrated Silicon Solution

IS42S16400J-6BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz. It features self-refresh mode, 54 terminals in a thin profile grid array package, and supports common I/O type. Ideal for industrial applications requiring fast memory access and high density storage capabilities.

Median Price

$2.550

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 49 parts In-Stock

1+ parts

$3.420

100+ parts

$2.710

1k+ parts

$2.470

10k+ parts

$2.350

49

$3.420

$2.710

$2.470

$2.350

Rochester

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

$2.550

1k+ parts

$2.280

10k+ parts

$2.140

2,800

-

$2.550

$2.280

$2.140

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$1.834

1k+ parts

$1.461

10k+ parts

-

1,000

-

$1.834

$1.461

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$2.324

100+ parts

-

1k+ parts

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300

$2.324

-

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Chip Stock

USA . 10,970 parts In-Stock

1+ parts

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10,970

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Vyrian

USA . 3,700 parts In-Stock

1+ parts

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3,700

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LIBRA Elektronik GmbH

Germany . 375 parts In-Stock

1+ parts

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375

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 2,513 parts In-Stock

1+ parts

$2.324

100+ parts

-

1k+ parts

-

10k+ parts

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2,513

$2.324

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Continental Prestige Electronics

USA . 2,125 parts In-Stock

1+ parts

$2.324

100+ parts

-

1k+ parts

-

10k+ parts

$2.278

2,125

$2.324

-

-

$2.278

Netroflash

USA . 50 parts In-Stock

1+ parts

$2.324

100+ parts

-

1k+ parts

$2.208

10k+ parts

$2.162

50

$2.324

-

$2.208

$2.162

Corohmni

South Africa . 566 parts In-Stock

1+ parts

$3.377

100+ parts

-

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566

$3.377

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Aztec Data Supply Inc.

USA . 4,879 parts In-Stock

1+ parts

$4.240

100+ parts

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10k+ parts

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4,879

$4.240

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

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100+ parts

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7,000

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Overview

Discover the exceptional quality and reliability of Integrated Silicon Solution's IS42S16400J-6BLI-TR DRAM. This cutting-edge memory module offers unparalleled performance and efficiency, making it ideal for a wide range of applications. With its advanced technology and industrial-grade construction, this product ensures seamless operation and maximum data integrity. Upgrade your system with IS42S16400J-6BLI-TR and experience the benefits of top-notch memory solutions that elevate your performance to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures a durable and lightweight package, making it suitable for various applications.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving space and simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfer, enhancing overall performance and reliability.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard and widely used voltage level, allowing for compatibility with different systems and devices.

Maximum Clock Frequency (fCLK): 166 MHz

High clock frequency enables fast data processing and efficient multitasking capabilities.

Technical Specifications

DRAM IS42S16400J-6BLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

S-PBGA-B54

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,9X9,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

150 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

IS42S16400J-6BLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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