Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Micron Technology's MT41K256M8DA-125AIT:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features a thin profile grid array package and operates at temperatures ranging from -40 to 85 °C. Ideal for industrial applications requiring high-speed synchronous memory with self-refresh capabilities.
Median Price
$5.506
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Suppliers In-Stock
12
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1k+
Mouser Electronics
1+ parts
$5.250
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$4.390
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$4.100
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Arrow
Newark
$43.510
Verical
Digiode
$5.231
Nova Conductors
$8.388
Chip Stock
NAC Semi
$5.680
Vyrian
ComSIT Distribution GmbH
Mil-Aero Solutions, Inc.
Bisco
Corohmni
$2.003
Component Stockers USA
$2.120
$2.010
$2.380
Aztec Data Supply Inc.
$3.930
Semicontronic
$4.460
$4.348
$4.326
Ampacity Inc.
Corphita
$4.955
Continental Prestige Electronics
$8.220
GreenTree Electronics
Authorized Procurement Solutions
Microchip USA
Argo Parts USA
Futuretech Components
Perfect Parts
Kepictronics
PLASTIC/EPOXY - This material provides durability and reliability to the product.
YES - Allows for easy and efficient installation on circuit boards.
1 - Simplifies the design and integration process.
AEC-Q100 - Ensures high quality and performance standards.
RECTANGULAR - Offers a versatile and space-saving design.
SYNCHRONOUS - Provides efficient data transfer and processing.
YES - Helps in reducing power consumption during standby mode.
COMMON - Enables easy communication with other components.
1.35 - Provides stable power supply for optimal performance.
1.35 - Supports the overall power requirement of the device.
DRAM MT41K256M8DA-125AIT:K attributes and parameters. Explore more DRAM devices from Micron Technology
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MT41K256M8DA-125AIT:K Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Design/Specification - Mult Dev Marking Chg 20/Dec/2019
PCN Assembly/Origin - Tray Pkg Label Chgs 8/Oct/2020
PCN Packaging - Memory 24-May-2022 Tray 05-May-2022
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
LM358N
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
2N7002
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
DS18B20
Maxim Integrated
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
2N2222A
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
LL4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
FDC5614P
Onsemi
FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
Promax-johnton
Kec
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
1N4148
Shandong Yiguang Electronic Joint Stock
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
SMBJ18CA
Hy Electronic
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
Weitron Technology
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;
S70KS1282GABHB030
Infineon Technologies
S70KS1282GABHB030 by Infineon Technologies is a 16MX8 DRAM with 1.8V supply voltage, operating at up to 200MHz clock frequency. It is designed for applications requiring high-speed synchronous memory, such as automotive electronics and industrial control systems.
AS4C512M16D3LA-10BIN
Alliance Memory
Alliance Memory's AS4C512M16D3LA-10BIN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from -40 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density in a compact grid array package.
M378T5663QZ3-CF7
Samsung
Samsung M378T5663QZ3-CF7 is a 256MX64 DDR DRAM MODULE with 400 MHz clock frequency. Operating at 1.8V, it offers 8192 refresh cycles and has a memory width of 64 bits. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
IS42S16800F-7TL-TR
Integrated Silicon Solution
IS42S16800F-7TL-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 134217728 bit memory density. It operates at a max clock frequency of 143 MHz and has a memory width of 16. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT41K64M16TW-107AAT:J
Micron Technology
Micron Technology's MT41K64M16TW-107AAT:J is a DDR3L DRAM with 64MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 1073741824 bits. Ideal for applications requiring high-speed and low-power memory solutions.
MT49H8M36BM-25E:B
Micron Technology's MT49H8M36BM-25E:B is a DDR DRAM with 8MX36 organization, operating at 400 MHz. It has a memory density of 301989888 bit and supports multi-bank page burst access mode. With a max clock frequency of 400 MHz, it is suitable for high-performance applications requiring fast data processing.
K4S561632C-TC75
Samsung's K4S561632C-TC75 is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for commercial applications, it offers 16777216 words memory density and supports four bank page burst access mode.
M378T2863RZS-CE6
Samsung M378T2863RZS-CE6 DDR DRAM Module features 128MX8 organization, operates at 333 MHz clock frequency, and has a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.
MT41K256M16HA-125IT:E
Micron Technology's MT41K256M16HA-125IT:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and offers 4294967296 bits memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT8HTF12864HDZ-800M1
Micron Technology's MT8HTF12864HDZ-800M1 is a 128MX64 DDR DRAM MODULE with 8589934592 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode. Ideal for commercial applications, this rectangular microelectronic assembly has a max temperature of 70°C.
IS43LQ16128A-062BLI
IS43LQ16128A-062BLI by Integrated Silicon Solution is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency. It operates in synchronous mode, has a memory density of 2147483648 bit, and supports multi-bank page burst access. Ideal for industrial applications requiring high-speed data processing and low power consumption.
S27KL0642DPBHA020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE; Surface Mount: YES;
W631GU6NB-09
Winbond Electronics
The Winbond Electronics W631GU6NB-09 is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. It features synchronous operation, self-refresh capability, and a max clock frequency of 1066 MHz. Ideal for applications requiring high-speed memory access in devices such as laptops, tablets, and networking equipment.
MT48H32M16LFB4-6IT:C
Micron Technology's MT48H32M16LFB4-6IT:C is a DDR DRAM with 32MX16 organization, operating at 166 MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.
D2164A-20
Intel
Intel's D2164A-20 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 200ns. Ideal for commercial applications requiring high-speed memory solutions.
MT47H32M16NF-25E:HTR
Micron Technology's MT47H32M16NF-25E:HTR is a DDR2 DRAM with 32MX16 organization, 400 MHz clock frequency, and 1.8V nominal voltage. It is used in applications requiring high-speed synchronous operation, such as servers, networking equipment, and industrial automation systems.
AS4C256M16D3C-12BINTR
Alliance Memory's AS4C256M16D3C-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.
MT48LC8M16A2P-6AAIT:L
Micron Technology's MT48LC8M16A2P-6AAIT:L is a 8MX16 Synchronous DRAM with 8388608 words, 134217728 bit memory density, and operates at 3.3V. It features self-refresh mode, industrial temperature grade, and is suitable for applications requiring fast access time and high memory capacity.
MT41J64M16JT-15EAAT:G
Micron Technology's MT41J64M16JT-15EAAT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in automotive electronics and industrial control systems.
K4H561638H-UCB3
Samsung's K4H561638H-UCB3 DDR1 DRAM features 16MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.
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MT41K256M16TW-107AIT:P
Micron Technology's MT41K256M16TW-107AIT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a low supply voltage of 1.35V and is suitable for industrial applications requiring high memory density and fast data access speeds. The package style is grid array, thin profile, fine pitch with common I/O type and self-refresh capability.
MT41K256M16TW-107IT:P
Micron Technology's MT41K256M16TW-107IT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing speeds.
MT41K256M16TW-107XIT:P
Micron Technology's MT41K256M16TW-107XIT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a grid array package style.
MT41K256M16TW-107:P/TR
Micron Technology's MT41K256M16TW-107:P/TR is a DDR3L DRAM with 256MX16 organization, operating at 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT41K256M16TW-107:P
Micron Technology's MT41K256M16TW-107:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in devices like computers and servers.
MT41K256M16TW-107IT:PTR
MT41K256M16TW-107IT:PTR by Micron Technology is a 256MX16 DDR3L DRAM with a memory density of 4Gb. It operates at a nominal voltage of 1.35V and has an access time of 20ns. This memory module is suitable for applications requiring high-speed synchronous operation and low power consumption.
MT41K256M16TW-107AAT:P
Micron Technology's MT41K256M16TW-107AAT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With self-refresh capability and AEC-Q100 screening level, it offers reliable performance in harsh environments.
MT41K128M16JT-125IT:KTR
Micron Technology's MT41K128M16JT-125IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and multi-bank page burst access mode.
MT41K128M16JT-125IT:K
MT41K128M16JT-125IT:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a max supply voltage of 1.45V and offers a memory density of 2147483648 bits. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capabilities.
MT41K256M16TW-107AAT:PTR
MT41K256M16TW-107AAT:PTR by Micron Technology is a DDR3L DRAM with 256MX16 organization, operating at a max clock frequency of 934.57 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
MT41K128M16JT-125AIT:KTR
Micron Technology's MT41K128M16JT-125AIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates at temperatures ranging from -40 to 85 °C. Ideal for applications requiring high-speed synchronous memory with common I/O type.
MT41K128M16JT-125XIT:K
Micron Technology's MT41K128M16JT-125XIT:K is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile packages.
MT41K128M16JT-125:K
MT41K128M16JT-125:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes 195 mA max supply current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K128M16JT-125AIT:K
Micron Technology's MT41K128M16JT-125AIT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K128M16JT-125XIT:KTR
Micron Technology's MT41K128M16JT-125XIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.
MT41K128M16JT-125:KTR
Micron Technology's MT41K128M16JT-125:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package with grid array style is suitable for applications requiring high memory density and fast data processing.
MT41K256M16TW-107AUT:P
DDR3L DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT41K256M16HA-125IT:ETR
Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT41K128M16JT-107:K
Micron Technology's MT41K128M16JT-107:K is a DDR3L DRAM with 128MX16 organization, operating at 933 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like smartphones, tablets, and networking equipment.
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