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IS43QR16256B-075UBLI

Integrated Silicon Solution

IS43QR16256B-075UBLI by Integrated Silicon Solution

IS43QR16256B-075UBLI by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1333.33 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

Median Price

$23.305

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 153 parts In-Stock

1+ parts

$23.070

100+ parts

$20.195

1k+ parts

$18.720

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$23.070

$20.195

$18.720

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Mouser Electronics

USA . 10 parts In-Stock

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$23.540

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$21.120

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10

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$21.120

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EBV Elektronik

Germany . 198 parts In-Stock

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198

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Nova Conductors

Japan . 86 parts In-Stock

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$11.962

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$11.962

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IBS Electronics

USA . 4,817 parts In-Stock

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$26.255

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Vyrian

USA . 2,336 parts In-Stock

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Velocity Electronics

USA . 1,079 parts In-Stock

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NAC Semi

USA . 198 parts In-Stock

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$13.410

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198

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Distributors (Availability)

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AZTECH Wire

Italy . 690 parts In-Stock

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$7.980

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690

$7.980

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Aranea Global

USA . 1,000 parts In-Stock

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$11.723

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$11.254

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$11.723

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$11.254

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Continental Prestige Electronics

USA . 4,106 parts In-Stock

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$11.962

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$11.723

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$11.962

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Argo Parts USA

USA . 4,362 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 171 parts In-Stock

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Overview

Upgrade your devices with the IS43QR16256B-075UBLI DDR4 DRAM from Integrated Silicon Solution. Designed with top-quality materials and advanced technology, this memory module offers seamless performance and reliability for a wide range of applications. Whether you're gaming, multitasking, or running intensive programs, this product provides the speed and efficiency you need. Trust in ISS's reputation for excellence and experience the difference in your device's performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

The surface mount feature allows for easy installation and saves space on the PCB, making it suitable for compact designs.

Package Shape: RECTANGULAR

The rectangular package shape ensures compatibility with standard PCB layouts, enhancing ease of integration in various electronic systems.

Operating Mode: SYNCHRONOUS

The synchronous operation mode provides high-speed data transfer and synchronized communication, improving overall system performance.

Self Refresh: YES

The self-refresh capability helps in reducing power consumption by automatically refreshing the memory cells, making it energy-efficient.

Input/Output Type: COMMON

The common input/output type simplifies interface design and compatibility with various systems, enhancing versatility.

Nominal Supply Voltage / Vsup (V): 1.2

The 1.2V nominal supply voltage ensures compatibility with low-power applications and reduces power consumption.

No. of Terminals: 96

With 96 terminals, the product offers ample connectivity options and compatibility with a wide range of systems and devices.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array, thin profile, and fine pitch package style enables high-density mounting and efficient space utilization on the PCB.

Maximum Operating Temperature: 95 °C

The high operating temperature range of up to 95°C makes the product suitable for industrial and extreme temperature environments.

Organization: 256MX16

The organizational structure of 256MX16 provides ample memory capacity and data processing capabilities for high-performance applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for bus sharing and efficient data transfer management, enhancing system flexibility.

Minimum Standby Voltage: 1.14 V

The low minimum standby voltage of 1.14V ensures energy efficiency and helps in reducing standby power consumption.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40°C enables reliable performance in harsh environmental conditions.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy installation and secure connectivity, ensuring stable operation even in rugged conditions.

Maximum Seated Height: 1.2 mm

The low maximum seated height of 1.2mm allows for slim and compact device designs, making it ideal for space-constrained applications.

Maximum Clock Frequency (fCLK): 1333.33 MHz

The high maximum clock frequency of 1333.33 MHz enables fast data processing and low latency, enhancing system performance.

Width: 7.5 mm

The compact width of 7.5mm allows for space-efficient PCB layout designs and compatibility with small form factor devices.

Minimum Supply Voltage (Vsup): 1.14 V

The low minimum supply voltage of 1.14V ensures energy efficiency and compatibility with low-power systems.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures reliable soldering and compatibility with automated assembly processes.

Length: 13.5 mm

The length of 13.5mm offers a compact footprint, making it suitable for applications with limited space availability.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable performance in rugged environments and harsh operating conditions.

Access Mode: DUAL BANK PAGE BURST

The dual bank page burst access mode allows for simultaneous access to multiple memory banks, enhancing data retrieval speed and efficiency.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption, high-speed operation, and compatibility with modern electronic systems.

Terminal Form: BALL

The ball terminal form simplifies installation and ensures secure connections, enhancing overall system reliability.

Maximum Supply Current: 385 mA

The high maximum supply current of 385mA supports power-hungry applications and ensures stable operation under heavy loads.

No. of Words: 268435456 words

The large number of words available in the memory provides ample storage capacity for data-intensive applications, enhancing performance.

Sequential Burst Length: 8

The sequential burst length of 8 allows for efficient data retrieval and transfer, improving overall system speed and responsiveness.

Memory Width: 16

The memory width of 16 bits allows for high-speed data processing and efficient communication, making it suitable for demanding applications.

Terminal Pitch: 0.8 mm

The small terminal pitch of 0.8mm enables high-density mounting and space-efficient PCB layouts, ideal for compact designs.

No. of Words Code: 256M

The 256M code indicates the vast memory capacity available in the product, making it suitable for data-intensive tasks and high-performance applications.

Maximum Supply Voltage (Vsup): 1.26 V

The high maximum supply voltage of 1.26V ensures compatibility with a wide range of systems and helps in optimizing performance under varying voltage conditions.

Memory Density: 4294967296 bit

The high memory density of 4294967296 bits provides ample storage capacity for complex data processing tasks, enhancing overall system performance.

Memory IC Type: DDR4 DRAM

The DDR4 DRAM memory IC type offers high-speed data transfer rates, low power consumption, and improved efficiency, making it ideal for modern applications.

Maximum Standby Current: 0.062 Amp

The low maximum standby current of 0.062 Amp ensures energy efficiency and helps in reducing power consumption during idle periods.

Interleaved Burst Length: 8

The interleaved burst length of 8 allows for efficient data transfer and improved memory access speeds, enhancing overall system performance.

Technical Specifications

DRAM IS43QR16256B-075UBLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

1333.33 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-PBGA-B96

Length:

13.5 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

8

Maximum Standby Current:

.062 Amp

Minimum Standby Voltage:

1.14 V

Maximum Supply Current:

385 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

7.5 mm

Trade Compliance

IS43QR16256B-075UBLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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