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MT48LC16M16A2P-75IT:D

Micron Technology

MT48LC16M16A2P-75IT:D by Micron Technology

Micron Technology's MT48LC16M16A2P-75IT:D is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact thin profile package for space-constrained designs.

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Lifecycle Status

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23

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1k+

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Chip Stock

USA . 15,500 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

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Atlantic Semiconductor

USA . 2,748 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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Martec Srl

Italy . 146 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 100 parts In-Stock

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Digiode

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Inventory MP

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Bristol Electronics

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Rebound Electronics

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J & M Industries LLC

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LWI Electronics Inc

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Touchstone Systems

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Sogenti Electronics

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Quantum Digital Technology

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ComSIT Distribution GmbH

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ComSIT USA

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Electronics Depot

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Sensible Micro Corp

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M&R Communications

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J2 Sourcing AB

Sweden . 3 parts In-Stock

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Sunrise Surplus Inc.

USA . 3 parts In-Stock

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Distributors (Availability)

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Andel Nordic

Denmark . 9,575 parts In-Stock

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$2.266

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$2.175

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$2.175

9,575

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$2.175

Corohmni

South Africa . 503 parts In-Stock

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$2.610

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Aztec Data Supply Inc.

USA . 176 parts In-Stock

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$3.203

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Component Stockers USA

USA . 513 parts In-Stock

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$4.060

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$3.860

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$3.730

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513

$4.060

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$3.730

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Semicontronic

India . 2,538 parts In-Stock

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$9.000

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$8.775

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$8.730

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AZTECH Wire

Italy . 595 parts In-Stock

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$10.942

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Ampacity Inc.

Singapore . 310 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,308 parts In-Stock

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Perfect Parts

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S.R.D Solutions

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 6,821 parts In-Stock

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Microchip USA

USA . 5,449 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,285 parts In-Stock

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Argo Parts USA

USA . 2,933 parts In-Stock

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RC Electronics

USA . 2,641 parts In-Stock

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$14.140

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$13.330

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$13.060

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Corphita

USA . 1,805 parts In-Stock

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Continental Prestige Electronics

USA . 1,744 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 683 parts In-Stock

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Kepictronics

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520

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Metaverse IC Inc.

Canada . 376 parts In-Stock

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376

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Bastille Electronics

Australia . 300 parts In-Stock

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Futuretech Components

Singapore . 185 parts In-Stock

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Fairview Electronics Ltd

UK . 10 parts In-Stock

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Overview

Get ready to boost your device's performance with the MT48LC16M16A2P-75IT:D by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-notch DRAM products that are reliable and efficient. This high-quality memory chip is perfect for a wide range of applications, offering fast data access and seamless multitasking capabilities. Upgrade your system with this versatile component and experience the value, benefits, and advantages it brings to your technology needs. Trust Micron Technology for cutting-edge solutions that deliver exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

This feature allows for easy installation and space-saving on the PCB.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to handle and integrate into electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transmitted at a consistent and reliable pace.

Self Refresh: YES

Self refresh capability helps in reducing power consumption and improving efficiency.

Input/Output Type: COMMON

Common input/output type ensures compatibility with a wide range of devices.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3V ensures stable performance and power efficiency.

Power Supplies (V): 3.3

The specific power supply voltage of 3.3V helps in optimal functioning of the product.

No. of Terminals: 54

Having 54 terminals allows for a good level of connectivity and flexibility in usage.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile package style saves space and makes it suitable for compact designs.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the product can withstand harsh environmental conditions.

Organization: 16MX16

The 16MX16 organization provides a high memory capacity for storing data efficiently.

Output Characteristics: 3-STATE

The 3-state output allows for multiple output options, enhancing versatility.

Minimum Operating Temperature: -40 °C

Operating at a minimum temperature of -40°C ensures reliable performance in extreme cold conditions.

Terminal Finish: Matte Tin (Sn)

The terminal finish of matte tin provides good conductivity and corrosion resistance.

Terminal Position: DUAL

The dual terminal position offers stability and reliability in connections.

Maximum Seated Height: 1.2 mm

The low maximum seated height allows for a compact design and easy integration.

Maximum Clock Frequency (fCLK): 133 MHz

Operating at a maximum clock frequency of 133 MHz ensures fast data processing.

Width: 10.16 mm

The width of 10.16 mm provides a compact form factor for space-constrained applications.

Minimum Supply Voltage (Vsup): 3 V

Operating at a minimum supply voltage of 3V ensures consistent performance.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, the product maintains integrity during soldering.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and reliability in assembly.

Length: 22.22 mm

The length of 22.22 mm allows for easy integration into various electronic devices.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in demanding environments.

Access Mode: FOUR BANK PAGE BURST

The four bank page burst access mode enables efficient data access and transfer.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption and high speed performance.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering.

Maximum Supply Current: 125 mA

Operating at a maximum supply current of 125 mA ensures optimal power consumption.

No. of Words: 16777216 words

With a large number of words capacity, the product offers ample storage for data.

Sequential Burst Length: 1,2,4,8,FP

The sequential burst length options allow for flexible data transfer modes.

Memory Width: 16

A memory width of 16 ensures efficient data processing and storage.

Terminal Pitch: 0.8 mm

The terminal pitch of 0.8 mm provides a good balance between connectivity and compactness.

No. of Words Code: 16M

The 16M words code indicates the high memory capacity of the product.

Maximum Supply Voltage (Vsup): 3.6 V

Operating at a maximum supply voltage of 3.6V ensures safe and reliable performance.

Memory Density: 268435456 bit

The high memory density of 268435456 bits allows for extensive data storage.

Memory IC Type: SYNCHRONOUS DRAM

Being a synchronous DRAM, the product offers fast and reliable memory access.

Maximum Standby Current: 0.002 Amp

Operating at a maximum standby current of 0.002 Amp ensures minimal power consumption in standby mode.

Refresh Cycles: 8192

With 8192 refresh cycles, the product maintains data integrity and reliability.

Interleaved Burst Length: 1,2,4,8

Interleaved burst length options provide flexibility in data transfer modes.

Maximum Access Time: 5.4 ns

With a maximum access time of 5.4 ns, the product offers quick data retrieval and processing.

Technical Specifications

DRAM MT48LC16M16A2P-75IT:D attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

125 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC16M16A2P-75IT:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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