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IS42S16800F-6TL-TR

Integrated Silicon Solution

IS42S16800F-6TL-TR by Integrated Silicon Solution

IS42S16800F-6TL-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 166 MHz clock frequency. It operates at a voltage of 3.3V and has a memory density of 134217728 bits. Ideal for applications requiring high-speed data processing in commercial temperature environments.

Median Price

$3.590

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,196 parts In-Stock

1+ parts

$3.590

100+ parts

$2.840

1k+ parts

$2.590

10k+ parts

$2.310

1,196

$3.590

$2.840

$2.590

$2.310

Distributors (In-Stock)

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Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$3.010

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650

$3.010

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Chip Stock

USA . 17,660 parts In-Stock

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17,660

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Component Sense

UK . 3,095 parts In-Stock

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Vyrian

USA . 1,005 parts In-Stock

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1,005

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Distributors (Availability)

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Continental Prestige Electronics

USA . 3,604 parts In-Stock

1+ parts

$3.010

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$2.950

3,604

$3.010

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$2.950

Argo Parts USA

USA . 2,395 parts In-Stock

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$3.010

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2,395

$3.010

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Netroflash

USA . 50 parts In-Stock

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$3.010

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$2.859

10k+ parts

$2.799

50

$3.010

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$2.859

$2.799

Aztec Data Supply Inc.

USA . 2,276 parts In-Stock

1+ parts

$3.050

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2,276

$3.050

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Corohmni

South Africa . 437 parts In-Stock

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$5.736

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QUARKTWIN TECHNOLOGY LTD

USA . 24,278 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 1,130 parts In-Stock

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Overview

Upgrade your system with the high-quality IS42S16800F-6TL-TR DRAM from Integrated Silicon Solution. Known for their reliability and innovation, ISS delivers cutting-edge memory solutions that meet the demands of today's technology. Perfect for a wide range of applications, this DRAM offers lightning-fast performance and seamless multitasking. With a 3.3V nominal supply voltage and 8MX16 organization, this memory module ensures smooth operations and increased efficiency. Enhance your device's capabilities and experience top-notch performance with ISS's IS42S16800F-6TL-TR DRAM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for various applications.

Surface Mount: YES

Being surface mountable makes installation easier and saves valuable PCB space.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient packing on a PCB and space-saving design.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V is common and ensures compatibility with a wide range of systems.

Power Supplies (V): 3.3

The low power supply requirement helps in reducing overall power consumption.

No. of Terminals: 54

Having 54 terminals enables seamless integration and connection with other components.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile design make it suitable for compact devices.

Maximum Operating Temperature: 70 °C

With a high operating temperature range, the product can withstand harsh environments.

Organization: 8MX16

The organization of 8MX16 offers high memory density in a compact package.

Output Characteristics: 3-STATE

The 3-STATE output allows for efficient data management and control.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures the product's reliability in various conditions.

Terminal Position: DUAL

The dual terminal position provides flexibility in PCB layout and connection options.

Maximum Clock Frequency (fCLK): 166 MHz

The high clock frequency allows for fast data transfer and processing speed.

Temperature Grade: COMMERCIAL

Being commercial grade ensures reliability and compatibility with standard applications.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity.

Terminal Form: GULL WING

The gull-wing terminal form facilitates easy soldering and secure connection.

Maximum Supply Current: 120 mA

The low maximum supply current helps in reducing overall power consumption.

No. of Words: 8388608 words

With a high number of words, the memory capacity is sufficient for storing large amounts of data.

Sequential Burst Length: 1,2,4,8,FP

The sequential burst length options offer flexibility in data transfer modes.

Memory Width: 16

A memory width of 16 ensures efficient data processing and storage capabilities.

Terminal Pitch: 0.8 mm

The small terminal pitch allows for high-density packaging and space-saving design.

No. of Words Code: 8M

The 8M words code indicates a high memory capacity suitable for various applications.

Memory Density: 134217728 bit

The high memory density provides ample storage space for extensive data needs.

Memory IC Type: SYNCHRONOUS DRAM

The synchronous DRAM type ensures high-speed data access and processing.

Maximum Standby Current: 0.002 Amp

The low standby current consumption helps in conserving energy when the product is idle.

Refresh Cycles: 4096

With 4096 refresh cycles, the product maintains data integrity and reliability over time.

Interleaved Burst Length: 1,2,4,8

The interleaved burst length options enable efficient data transfer and access.

Maximum Access Time: 5.4 ns

The low maximum access time ensures fast data retrieval and processing speed.

Technical Specifications

DRAM IS42S16800F-6TL-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

5.4 ns

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

120 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Trade Compliance

IS42S16800F-6TL-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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