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MT42C8128DJ-7

Micron Technology

MT42C8128DJ-7 by Micron Technology

Micron Technology's MT42C8128DJ-7 is a 128KX8 DRAM with 70ns access time, operating at 5V. It features 131072 words, 1048576 bit memory density, and supports fast page access mode. Ideal for video applications requiring high-speed data processing in commercial temperature environments.

Median Price

$6.250

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ace Electronics

USA . 300 parts In-Stock

1+ parts

$6.250

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300

$6.250

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Chip Stock

USA . 16,000 parts In-Stock

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16,000

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Digiode

USA . 1,968 parts In-Stock

1+ parts

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1,968

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Vyrian

USA . 1,210 parts In-Stock

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1,210

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Q Components

USA . 24 parts In-Stock

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24

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 1,380 parts In-Stock

1+ parts

$3.258

100+ parts

-

1k+ parts

$3.128

10k+ parts

$3.128

1,380

$3.258

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$3.128

$3.128

Ampacity Inc.

Singapore . 1,295 parts In-Stock

1+ parts

$30.000

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1,295

$30.000

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Argo Parts USA

USA . 3,970 parts In-Stock

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3,970

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Continental Prestige Electronics

USA . 3,607 parts In-Stock

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3,607

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Corphita

USA . 770 parts In-Stock

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770

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A-Plus Industry Inc.

USA . 4 parts In-Stock

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4

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Overview

Enhance your electronic devices with the high-quality MT42C8128DJ-7 DRAM by Micron Technology. With a reputation for excellence in memory ICs, Micron delivers exceptional performance and reliability. This versatile component is perfect for a wide range of applications, from computers to gaming consoles, offering customers unparalleled value and benefits. Upgrade your technology with Micron's cutting-edge DRAM for seamless operation and enhanced user experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and helps protect the internal components of the DRAM, ensuring long-term reliability.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of data transfer, enhancing flexibility and efficiency in data processing.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply makes it compatible with a wide range of devices and systems, providing seamless integration.

Organization: 128KX8

Organized into 128K memory cells of 8 bits each, optimizing data storage and retrieval performance.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making the DRAM energy efficient and fast.

Technical Specifications

DRAM MT42C8128DJ-7 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

70 ns

Additional Features:

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

JESD-30 Code:

R-PDSO-J40

JESD-609 Code:

e0

Length:

26.06 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

40

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ40,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

512

Maximum Seated Height:

3.81 mm

Maximum Standby Current:

.008 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

160 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

10.21 mm

Trade Compliance

MT42C8128DJ-7 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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