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MT4264-15

Micron Technology

MT4264-15 by Micron Technology

MT4264-15 by Micron Technology is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. It operates at 5V, has a max access time of 150ns, and features 3-STATE output characteristics. This DRAM is suitable for applications requiring high-speed data storage and retrieval in commercial temperature environments.

Median Price

$7.845

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 230 parts In-Stock

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$2.530

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-

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230

$2.530

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Component Electronics Inc.

Canada . 25 parts In-Stock

1+ parts

$7.690

100+ parts

$5.770

1k+ parts

$5.000

10k+ parts

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25

$7.690

$5.770

$5.000

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Ace Electronics

USA . 44 parts In-Stock

1+ parts

$8.000

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44

$8.000

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Forefront Electronics and Design

USA . 2 parts In-Stock

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$9.800

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2

$9.800

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Chip Stock

USA . 11,200 parts In-Stock

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11,200

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Vyrian

USA . 4,859 parts In-Stock

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Q Components

USA . 2,391 parts In-Stock

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ECAB

Sweden . 1,990 parts In-Stock

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1,990

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MRC Electronics

USA . 880 parts In-Stock

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880

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Standard Data Resources

USA . 752 parts In-Stock

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752

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Digiode

USA . 528 parts In-Stock

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528

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ACDS - Activité Composants Distribution Service

France . 350 parts In-Stock

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350

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Bristol Electronics

USA . 325 parts In-Stock

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325

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Dan-Mar Components

USA . 325 parts In-Stock

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325

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Inventory MP

USA . 225 parts In-Stock

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225

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Prism Electronics

USA . 158 parts In-Stock

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158

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Electronic Expediters

USA . 158 parts In-Stock

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158

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R&J Components

USA . 125 parts In-Stock

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125

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PC Components Company LLC

USA . 65 parts In-Stock

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65

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Classic Components Corporation

USA . 50 parts In-Stock

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50

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 49 parts In-Stock

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49

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Electronics Depot

USA . 46 parts In-Stock

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46

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First Choice Components Inc.

USA . 39 parts In-Stock

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Inland Empire Components Inc.

USA . 35 parts In-Stock

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Resion

USA . 34 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 25 parts In-Stock

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25

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Corel Iberica Componentes, S.L.

Spain . 19 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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A2Z Electronics, Inc.

USA . 9 parts In-Stock

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MISTER SPROCKETS

USA . 5 parts In-Stock

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5

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Mil-Aero Solutions, Inc.

USA . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,551 parts In-Stock

1+ parts

$8.000

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1,551

$8.000

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Corphita

USA . 1,839 parts In-Stock

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1,839

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 436 parts In-Stock

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436

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A-Plus Industry Inc.

USA . 140 parts In-Stock

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EMSNET (Excess)

USA . 50 parts In-Stock

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50

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Overview

Upgrade your electronics with the MT4264-15 from Micron Technology, a leading manufacturer known for top-quality DRAM products. This rectangular package design features separate input/output terminals and offers a nominal supply voltage of 5V, making it perfect for a wide range of applications. Experience faster performance and reliable memory storage with this page mode DRAM that ensures smooth operation and efficient data processing. Trust Micron Technology to deliver high-quality products that provide value, benefits, and advantages to all customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is lightweight and durable, making the product easy to handle and resistant to damage.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes this product compatible with a wide range of systems and ensures reliable performance.

Organization: 64KX1

This organization format allows for efficient data storage and retrieval, enhancing the overall speed and performance of the product.

Memory Density: 65536 bit

High memory density ensures that a large amount of data can be stored in a compact space, making this product ideal for applications requiring high memory capacity.

Refresh Cycles: 256

Having a high number of refresh cycles ensures data integrity and reliability over extended periods of use.

Maximum Access Time: 150 ns

A fast access time of 150 ns allows for quick data retrieval, reducing latency and improving overall system performance.

Technical Specifications

DRAM MT4264-15 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Maximum Access Time:

150 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e0

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

1

No. of Terminals:

16

No. of Words:

65536 words

No. of Words Code:

64K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

256

Sub-Category:

DRAMs

Maximum Supply Current:

30 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

MT4264-15 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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