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MT46V32M16P-5B:FTR

Micron Technology

MT46V32M16P-5B:FTR by Micron Technology

MT46V32M16P-5B:FTR by Micron Technology is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates synchronously, has self-refresh capability, and a max access time of 0.7 ns. It is commonly used in applications requiring high-speed memory such as computers and servers.

Median Price

$10.500

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 245 parts In-Stock

1+ parts

$10.500

100+ parts

$6.300

1k+ parts

$6.037

10k+ parts

-

245

$10.500

$6.300

$6.037

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Vyrian

USA . 7,491 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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7,491

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-

-

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Chip Stock

USA . 5,284 parts In-Stock

1+ parts

-

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1k+ parts

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5,284

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-

-

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Digiode

USA . 932 parts In-Stock

1+ parts

-

100+ parts

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932

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Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

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750

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Connector Distribution Corp

USA . 10 parts In-Stock

1+ parts

-

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10

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Right Parts Inc.

USA . 10 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,080 parts In-Stock

1+ parts

$2.180

100+ parts

-

1k+ parts

-

10k+ parts

-

3,080

$2.180

-

-

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Andel Nordic

Denmark . 1,778 parts In-Stock

1+ parts

$2.521

100+ parts

-

1k+ parts

$2.420

10k+ parts

$2.420

1,778

$2.521

-

$2.420

$2.420

Corohmni

South Africa . 68 parts In-Stock

1+ parts

$3.714

100+ parts

-

1k+ parts

-

10k+ parts

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68

$3.714

-

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AZTECH Wire

Italy . 675 parts In-Stock

1+ parts

$16.988

100+ parts

-

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675

$16.988

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Ampacity Inc.

Singapore . 792 parts In-Stock

1+ parts

$23.000

100+ parts

-

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792

$23.000

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QUARKTWIN TECHNOLOGY LTD

USA . 22,242 parts In-Stock

1+ parts

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22,242

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Microchip USA

USA . 7,733 parts In-Stock

1+ parts

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7,733

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Argo Parts USA

USA . 1,694 parts In-Stock

1+ parts

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1,694

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Corphita

USA . 1,664 parts In-Stock

1+ parts

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1,664

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Continental Prestige Electronics

USA . 1,448 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,448

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Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

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100+ parts

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50

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Overview

Discover the power of the MT46V32M16P-5B:FTR by Micron Technology, the leading manufacturer of high-quality DRAM technology. With its compact package and synchronous operating mode, this product offers exceptional performance for a wide range of applications. Experience the benefits of self-refresh capabilities and a nominal supply voltage of 2.6V, ensuring reliability and efficiency. With Micron Technology's commitment to excellence, you can trust that this memory module will exceed your expectations. Upgrade your devices with the MT46V32M16P-5B:FTR and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY. This material ensures durability and resistance to damage, making it a reliable choice for long-term use.

Surface Mount:

YES. The surface mount feature allows for easy installation and integration into various circuit boards, saving time and effort during assembly.

No. of Functions:

1. With a single function, this product simplifies the design and implementation process, reducing complexity and potential points of failure.

Package Shape:

RECTANGULAR. The rectangular shape provides a standardized form factor, allowing for compatibility with a wide range of systems and devices.

Operating Mode:

SYNCHRONOUS. The synchronous operation ensures precise timing and coordination between devices, maximizing efficiency and preventing data loss or corruption.

Self Refresh:

YES. The self-refresh capability allows the product to maintain data integrity even during power interruptions, providing reliability and data protection.

Nominal Supply Voltage / Vsup (V):

2.6. This voltage level offers a balance between power consumption and performance, making it suitable for various applications.

No. of Terminals:

66. The high number of terminals enables seamless communication and data transfer, enhancing the efficiency and speed of the product.

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH. This package style saves space, allowing for compact designs and efficient use of limited board area.

Maximum Operating Temperature:

70 °C. The ability to tolerate high temperatures ensures reliable operation in demanding environments, enhancing the product's versatility.

Organization:

32MX16. This organization provides a high memory capacity, allowing for storing and accessing large amounts of data efficiently.

Minimum Operating Temperature:

0 °C. The ability to function in cold temperatures enables reliable operation in diverse environments, increasing the product's usability.

Terminal Finish:

Matte Tin (Sn). The matte tin finish provides excellent solderability, ensuring secure connections and facilitating the manufacturing process.

Terminal Position:

DUAL. The dual terminal position allows for better stability and reduced crosstalk, maintaining signal integrity and improving overall performance.

No. of Ports:

1. This product features a single port for data access, simplifying the architecture and minimizing potential conflicts or performance bottlenecks.

Maximum Seated Height:

1.2 mm. The low seated height enables compatibility with slim form factor designs, expanding the range of possible applications.

Width:

10.16 mm. The compact width dimensions facilitate space-saving integration, making it suitable for devices with limited board space.

Minimum Supply Voltage (Vsup):

2.5 V. This low supply voltage contributes to energy efficiency while still providing stable operation and reliable performance.

Maximum Time At Peak Reflow Temperature (s):

30. The maximum allowed time at peak reflow temperature ensures proper soldering of the component, guaranteeing robust connections and avoiding potential failures.

Peak Reflow Temperature °C:

260. The high peak reflow temperature allows for reliable soldering and ensures the product's compatibility with a wide range of manufacturing processes.

Length:

22.22 mm. The length of the product allows for flexibility in design, accommodating different system configurations and requirements.

Temperature Grade:

COMMERCIAL. This temperature grade ensures compatibility with standard commercial operating conditions, making it suitable for most applications.

Access Mode:

FOUR BANK PAGE BURST. The four bank page burst access mode enhances memory access efficiency and overall system performance, enabling faster data retrieval.

Technology:

CMOS. The use of Complementary Metal-Oxide-Semiconductor (CMOS) technology provides low power consumption, high speed, and improved noise immunity, leading to a superior product choice.

Terminal Form:

GULL WING. The gull-wing terminal form offers secure connections and excellent mechanical strength, ensuring reliable performance and ease of manufacturing.

No. of Words:

33554432 words. With a large number of words, this product can store substantial amounts of information, meeting the demands of data-intensive applications.

Memory Width:

16. The wide memory width enhances data processing speed and efficiency, supporting high-performance computing and multitasking capabilities.

Terminal Pitch:

0.65 mm. The small terminal pitch allows for dense packing on circuit boards, optimizing space utilization and enabling compact system designs.

No. of Words Code:

32M. The code representing 32 million words indicates a high memory capacity, making this product suitable for data-intensive tasks and applications.

Maximum Supply Voltage (Vsup):

2.7 V. The maximum supply voltage provides a safety margin while maintaining stable operation, ensuring the product's reliability.

Memory Density:

536870912 bit. The high memory density allows for storing a vast amount of data, enabling efficient data processing and enhancing overall system performance.

Memory IC Type:

DDR1 DRAM. The DDR1 DRAM type provides fast data transfer rates, low latency, and high bandwidth, making it an excellent choice for demanding memory-intensive tasks.

Maximum Access Time:

0.7 ns. The low access time ensures rapid data retrieval and processing, resulting in high-speed performance and improved system responsiveness.

Technical Specifications

DRAM MT46V32M16P-5B:FTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

.7 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G66

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

66

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

2.6

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT46V32M16P-5B:FTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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