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MT48LC16M16A2P-7E:D

Micron Technology

MT48LC16M16A2P-7E:D by Micron Technology

Micron Technology's MT48LC16M16A2P-7E:D is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 143 MHz, has a memory density of 268435456 bit, and supports a max clock frequency of 143 MHz. Ideal for applications requiring fast data access and storage in commercial-grade environments.

Median Price

$6.400

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (In-Stock)

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Greenchips

USA . 3 parts In-Stock

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$5.460

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$5.460

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$5.460

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$5.460

3

$5.460

$5.460

$5.460

$5.460

Nova Conductors

Japan . 500 parts In-Stock

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$5.917

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$5.917

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DF Sales Co.

USA . 14 parts In-Stock

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$6.400

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DF Sales Co.

USA . 14 parts In-Stock

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$6.400

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Component Electronics Inc.

Canada . 22 parts In-Stock

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$15.380

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$11.540

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$10.000

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Chip Stock

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Vyrian

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Martec Srl

Italy . 375 parts In-Stock

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Digiode

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Whistler Technology

UK . 129 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 106 parts In-Stock

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J2 Sourcing AB

Sweden . 88 parts In-Stock

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ComSIT Distribution GmbH

Germany . 73 parts In-Stock

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ComSIT USA

USA . 73 parts In-Stock

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Classic Components Corporation

USA . 57 parts In-Stock

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Atlantic Semiconductor

USA . 55 parts In-Stock

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Cyclops Electronics Ltd

UK . 34 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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Semi Source

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Prism Electronics

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Elcom Components

USA . 12 parts In-Stock

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Semtec, LLC

USA . 9 parts In-Stock

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Halfin

Belgium . 9 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 9 parts In-Stock

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Speed Components Ltd

Israel . 5 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 3 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 194 parts In-Stock

1+ parts

$3.000

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$3.000

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$3.200

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$3.168

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$3.040

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50

$3.200

$3.168

$3.040

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Corohmni

South Africa . 478 parts In-Stock

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$4.422

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478

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Semicontronic

India . 1,268 parts In-Stock

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$5.000

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$4.875

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$4.850

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1,268

$5.000

$4.875

$4.850

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Continental Prestige Electronics

USA . 1,169 parts In-Stock

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$5.917

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$5.799

1,169

$5.917

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$5.799

Andel Nordic

Denmark . 7,360 parts In-Stock

1+ parts

$6.179

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$5.932

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$5.932

7,360

$6.179

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$5.932

$5.932

AZTECH Wire

Italy . 812 parts In-Stock

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$11.417

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Ampacity Inc.

Singapore . 1,009 parts In-Stock

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$25.000

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A-Z Elektronik GmbH

Germany . 12,676 parts In-Stock

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Argo Parts USA

USA . 4,140 parts In-Stock

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Perfect Parts

USA . 3,865 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Corphita

USA . 1,104 parts In-Stock

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Kepictronics

USA . 800 parts In-Stock

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800

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Futuretech Components

Singapore . 789 parts In-Stock

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789

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Microchip USA

USA . 262 parts In-Stock

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iodParts Technologies Inc.

India . 73 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 16 parts In-Stock

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Overview

Enhance your electronic devices with the superior performance of Micron Technology's MT48LC16M16A2P-7E:D DRAM memory module. Crafted with precision and quality in mind, this product offers seamless synchronization and self-refresh capabilities, ensuring optimal functionality for a wide range of applications. From gaming consoles to industrial automation systems, this memory module provides reliable performance, fast access times, and efficient power consumption. Elevate your technology experience and unlock endless possibilities with Micron Technology's cutting-edge memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and durable, ensuring it can withstand everyday use without adding unnecessary weight.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for precise timing and coordination between the memory and processor, resulting in efficient data processing and system performance.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is standard and widely compatible with most systems, ensuring seamless integration and operation.

Maximum Clock Frequency (fCLK): 143 MHz

With a maximum clock frequency of 143 MHz, this product can handle data at a high speed, making it ideal for applications that require quick data access and processing.

Memory IC Type: SYNCHRONOUS DRAM

The memory IC type of synchronous DRAM ensures efficient and synchronized data transfer, enhancing overall system performance and responsiveness.

Technical Specifications

DRAM MT48LC16M16A2P-7E:D attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

135 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC16M16A2P-7E:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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