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IS42S16100H-7BL

Integrated Silicon Solution

IS42S16100H-7BL by Integrated Silicon Solution

IS42S16100H-7BL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features dual bank page burst access mode and offers a memory density of 16777216 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.

Median Price

$3.310

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 14 parts In-Stock

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$3.310

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$3.080

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14

$3.310

$3.080

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.478

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50

$1.478

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Chip Stock

USA . 17,160 parts In-Stock

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J2 Sourcing AB

Sweden . 10,585 parts In-Stock

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Vyrian

USA . 2,886 parts In-Stock

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Distributors (Availability)

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$1.449

100+ parts

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$1.391

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500

$1.449

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$1.391

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Argo Parts USA

USA . 1,652 parts In-Stock

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$1.478

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Continental Prestige Electronics

USA . 180 parts In-Stock

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$1.478

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$1.449

180

$1.478

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$1.449

Corohmni

South Africa . 532 parts In-Stock

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$2.446

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532

$2.446

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Aztec Data Supply Inc.

USA . 3,133 parts In-Stock

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$4.960

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AZTECH Wire

Italy . 773 parts In-Stock

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$18.305

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Lixinc

USA . 17,643 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of cutting-edge technology with the IS42S16100H-7BL by Integrated Silicon Solution. As a leader in the industry, ISS offers top-quality DRAM solutions that deliver unparalleled performance and reliability. Ideal for a wide range of applications, this synchronous memory module boasts common input/output types and self-refresh capabilities, making it a versatile choice for your project needs. With a nominal supply voltage of 3.3V and a maximum clock frequency of 143 MHz, the IS42S16100H-7BL provides exceptional value and benefits to customers seeking high-speed, efficient memory solutions. Elevate your system's performance with ISS - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight yet durable, ensuring easy handling and long-lasting performance.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfer, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of systems while remaining energy-efficient.

Maximum Clock Frequency (fCLK): 143 MHz

With a high maximum clock frequency, this product can handle demanding tasks and processes at a fast pace.

Memory IC Type: SYNCHRONOUS DRAM

Being synchronous DRAM, this product offers high-speed data retrieval and processing capabilities, perfect for performance-oriented applications.

Technical Specifications

DRAM IS42S16100H-7BL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

DUAL BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B60

Length:

10.1 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA60,7X15,25

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Width:

6.4 mm

Trade Compliance

IS42S16100H-7BL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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