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MT48LC32M16A2P-75IT

Micron Technology

MT48LC32M16A2P-75IT by Micron Technology

Micron Technology's MT48LC32M16A2P-75IT is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact small outline package design.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Cyclops Electronics Ltd

UK . 3,505 parts In-Stock

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USA . 1,125 parts In-Stock

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Vectronix, Inc

USA . 905 parts In-Stock

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Vyrian

USA . 836 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Digiode

USA . 336 parts In-Stock

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336

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Touchstone Systems

USA . 80 parts In-Stock

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Pegasus Components GmbH

Germany . 5 parts In-Stock

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Corohmni

South Africa . 214 parts In-Stock

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$3.934

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Andel Nordic

Denmark . 8,300 parts In-Stock

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$4.663

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$4.477

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$4.477

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$4.477

AZTECH Wire

Italy . 699 parts In-Stock

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$10.073

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Ampacity Inc.

Singapore . 192 parts In-Stock

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$20.000

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Semicontronic

India . 179 parts In-Stock

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$22.425

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GreenTree Electronics

Israel . 68,138 parts In-Stock

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Continental Prestige Electronics

USA . 5,417 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,319 parts In-Stock

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Argo Parts USA

USA . 2,268 parts In-Stock

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Corphita

USA . 1,198 parts In-Stock

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Kepictronics

USA . 987 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Assy Fe

Spain . 3 parts In-Stock

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Overview

Experience the unmatched performance and reliability of Micron Technology with the MT48LC32M16A2P-75IT, a cutting-edge DRAM module designed for industrial applications. Boasting a 3.3V nominal supply voltage and a compact package style, this synchronous DRAM offers superior functionality and efficiency. With advanced features like self-refresh mode and common input/output type, this product ensures seamless operation in a variety of settings. Trust Micron Technology to deliver top-notch quality and innovation, providing your business with the competitive edge it needs to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and synchronization, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

Low voltage operation helps in reducing power consumption and heat generation, making it efficient.

Maximum Clock Frequency (fCLK): 133 MHz

High clock frequency enables faster data transfer and processing speeds.

Memory IC Type: SYNCHRONOUS DRAM

Synchronous DRAM offers faster access times and data transfer rates compared to traditional DRAM types.

Technical Specifications

DRAM MT48LC32M16A2P-75IT attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.0035 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

255 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC32M16A2P-75IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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