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MT46H32M16LFBF-6IT:BTR

Micron Technology

MT46H32M16LFBF-6IT:BTR by Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:BTR is a DDR1 DRAM with 32MX16 organization, 33554432 words, and 536870912 bit memory density. It operates synchronously at a max temperature of 85°C and is ideal for industrial applications requiring fast access times and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,494 parts In-Stock

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Digiode

USA . 1,382 parts In-Stock

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Nova Conductors

Japan . 400 parts In-Stock

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400

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LWI Electronics Inc

India . 1 parts In-Stock

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Corohmni

South Africa . 175 parts In-Stock

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$5.594

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175

$5.594

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AZTECH Wire

Italy . 253 parts In-Stock

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$14.498

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Semicontronic

India . 1,647 parts In-Stock

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$23.000

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$22.425

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$22.310

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$23.000

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$22.310

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Ampacity Inc.

Singapore . 1,612 parts In-Stock

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$28.000

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QUARKTWIN TECHNOLOGY LTD

USA . 13,795 parts In-Stock

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Microchip USA

USA . 4,971 parts In-Stock

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Argo Parts USA

USA . 4,498 parts In-Stock

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Continental Prestige Electronics

USA . 549 parts In-Stock

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549

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Bastille Electronics

Australia . 500 parts In-Stock

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Corphita

USA . 451 parts In-Stock

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451

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Overview

Discover the cutting-edge MT46H32M16LFBF-6IT:BTR by Micron Technology, a top-tier manufacturer renowned for excellence in DRAM technology. This high-quality memory module boasts a myriad of applications across various industries, offering unparalleled performance and reliability. With a nominal supply voltage of 1.8V and self-refresh capabilities, this product provides exceptional value to customers seeking top-of-the-line memory solutions. Experience the advantages of Micron's expertise in CMOS technology with this industrial-grade DDR1 DRAM module and elevate your projects to new heights of efficiency and speed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers durability and reliability for long-term use.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination between the memory and the system, improving overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal supply voltage of 1.8V provides a balance between power consumption and performance.

No. of Terminals: 60

Having 60 terminals allows for efficient connectivity and data transfer within the memory module.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, the memory module can function reliably in various environmental conditions.

Memory IC Type: DDR1 DRAM

Being a DDR1 DRAM ensures compatibility with a wide range of systems and devices, making it a versatile choice for memory upgrades or replacements.

Technical Specifications

DRAM MT46H32M16LFBF-6IT:BTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

6 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B60

JESD-609 Code:

e1

Length:

9 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT46H32M16LFBF-6IT:BTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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