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IS42S32800J-7TL

Integrated Silicon Solution

IS42S32800J-7TL by Integrated Silicon Solution

IS42S32800J-7TL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for commercial applications requiring fast access time of 5.4ns and a memory density of 268MB.

Median Price

$5.180

Lifecycle Status

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14

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Chip1Stop

Japan . 4 parts In-Stock

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$5.180

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Mouser Electronics

USA . 138 parts In-Stock

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$7.630

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$7.630

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DigiKey

USA . 104 parts In-Stock

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$7.630

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$6.721

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$6.171

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$6.016

104

$7.630

$6.721

$6.171

$6.016

Arrow

USA . 1,188 parts In-Stock

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$4.409

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Verical

USA . 1,188 parts In-Stock

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Avnet

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Nova Conductors

Japan . 100 parts In-Stock

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$4.811

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Vyrian

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NAC Semi

USA . 3,132 parts In-Stock

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$4.200

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Chip Stock

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Bristol Electronics

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Atlantic Semiconductor

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Semtec, LLC

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ACDS - Activité Composants Distribution Service

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$3.726

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$3.391

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$3.055

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$3.726

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Netroflash

USA . 1,000 parts In-Stock

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$4.811

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Continental Prestige Electronics

USA . 888 parts In-Stock

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$4.715

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Lixinc

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Argo Parts USA

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Perfect Parts

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Eastek

USA . 1,512 parts In-Stock

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GreenTree Electronics

Israel . 1,512 parts In-Stock

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S.R.D Solutions

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Overview

Unlock unparalleled performance and reliability with the IS42S32800J-7TL from Integrated Silicon Solution. As a leading manufacturer in the industry, ISS provides top-of-the-line DRAM solutions for a wide range of applications. With its synchronous operation, self-refresh capabilities, and common input/output type, this product offers exceptional value and benefits to customers seeking high-quality memory solutions. Experience seamless functionality and efficiency with the IS42S32800J-7TL, setting new standards in memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the DRAM, making it suitable for various environments.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise and efficient data transfer, enhancing overall performance.

No. of Terminals: 86

Higher number of terminals allow for more data to be processed simultaneously, improving multitasking capabilities.

Maximum Clock Frequency (fCLK): 143 MHz

High clock frequency enables fast data transfer speeds, making this DRAM ideal for applications requiring quick response times.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to energy efficiency and reliability.

Memory Density: 268435456 bit

High memory density allows for storage of large amounts of data, making this DRAM suitable for memory-intensive tasks.

Technical Specifications

DRAM IS42S32800J-7TL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

32

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP86,.46,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Maximum Supply Current:

170 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Width:

10.16 mm

Trade Compliance

IS42S32800J-7TL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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