Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Micron Technology's MT47H64M16HR-3AIT:H is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package, suitable for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. With AEC-Q100 screening level, it offers reliable performance in automotive electronics.
Median Price
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1k+
Chip Stock
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100+ parts
1k+ parts
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ComSIT Distribution GmbH
Vyrian
Digiode
Nova Conductors
NexGen Digital
Aztec Data Supply Inc.
$2.660
Corohmni
$3.788
Andel Nordic
$4.519
$4.338
Ampacity Inc.
$18.000
AZTECH Wire
$19.612
Semicontronic
$20.000
$19.500
$19.400
iodParts Technologies Inc.
A-Z Elektronik GmbH
Kepictronics
Futuretech Components
Authorized Procurement Solutions
RC Electronics
Continental Prestige Electronics
Corphita
Microchip USA
Argo Parts USA
Bastille Electronics
Robosynatics
This material provides durability and protection to the DRAM, ensuring a longer lifespan for the product.
Surface mount technology makes installation easier and more efficient, saving time and labor costs.
AEC-Q100 certification ensures high reliability and quality standards, making this DRAM suitable for automotive applications.
Synchronous operation allows for precise timing and coordination, resulting in optimal performance.
Operating at a lower voltage helps to reduce power consumption and heat generation, enhancing energy efficiency.
High clock frequency allows for fast data processing and transfer speeds, improving overall system performance.
Industrial-grade temperature range ensures reliability and functionality in harsh environmental conditions.
DDR2 technology offers improved data transfer rates and bandwidth compared to previous generations, enhancing system responsiveness.
High memory density allows for storing a large amount of data and running multiple applications simultaneously without performance degradation.
DRAM MT47H64M16HR-3AIT:H attributes and parameters. Explore more DRAM devices from Micron Technology
Access Mode:
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No. of Functions:
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No. of Terminals:
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No. of Words Code:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Organization:
Output Characteristics:
Package Body Material:
Package Code:
Package Equivalence Code:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Power Supplies (V):
Qualification:
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Maximum Seated Height:
Self Refresh:
Sequential Burst Length:
Maximum Standby Current:
Sub-Category:
Maximum Supply Current:
Maximum Supply Voltage (Vsup):
Minimum Supply Voltage (Vsup):
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MT47H64M16HR-3AIT:H Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.32
SB
8542.32.00.15
PCN Assembly/Origin - Tray Pkg Label Chgs 8/Oct/2020
PCN Packaging - Label 12/Sep/2016 Standard Pkg Label Chg 20/Feb/2019
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
1N4148WS
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
1N4148
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM317T
Inchange Semiconductor
Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;
SS14
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Baneasa S A
M39029/58-360
Defense Logistics Agency
CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;
FDV303N
Onsemi
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
STM32F407VGT6
STMicroelectronics
STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).
Gulf Semiconductor
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;
KSZ9031RNXIA
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
Forward International Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;
1N4148WT
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Microsemi
BAV99
Comchip Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Transys Electronics
SMBJ18CA
Taiwan Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW06031K00FKEAHP
Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.
MBRS1100T3G
MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
S27KL0642DPBHI023
Infineon Technologies
Infineon Technologies' S27KL0642DPBHI023 is a 8MX8 CMOS DRAM with synchronous operation and self-refresh capability. It has a max clock frequency of 166 MHz and a memory density of 67108864 bit. This memory IC type, known as HYPERRAM, is commonly used in applications requiring high-speed data storage and retrieval.
MT41K256M16HA-125M:E
Micron Technology
Micron Technology's MT41K256M16HA-125M:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes up to 239 mA at 1.35V. Ideal for applications requiring high-speed synchronous memory with low power consumption.
S70KL1282DPBHI020
Infineon's S70KL1282DPBHI020 is a 16MX8 DRAM with 166 MHz clock frequency, operating at 3.6V. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices due to its very thin profile grid array package style.
MT40A1G16TB-062EIT:F
Micron Technology's MT40A1G16TB-062EIT:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H32M16NF-25E:H
Micron Technology's MT47H32M16NF-25E:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, synchronous mode, and self-refresh capability. Ideal for applications requiring high-speed memory access in devices like computers and networking equipment.
MT53E1G16D1FW-046AIT:A
LPDDR4 DRAM;
W9825G6JB-6I
Winbond Electronics
W9825G6JB-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for industrial applications requiring fast data processing and common I/O type. With a thin profile package style and self-refresh capability, it offers reliable performance in various electronic devices.
MT46H32M16LFBF-6IT:C
Micron Technology's MT46H32M16LFBF-6IT:C is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications requiring fast access time of 5 ns. The package style is grid array with very thin profile and fine pitch, making it ideal for space-constrained designs.
W3H64M72E-533SBI
White Electronic Designs
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT48LC4M32B2P-6AIT:L
Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.
IS42S16400J-6BLI
Integrated Silicon Solution
IS42S16400J-6BLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with a max clock frequency of 166 MHz. It operates in an industrial temperature grade range and has a memory density of 67108864 bits. This memory IC type is commonly used in applications requiring high-speed data storage and retrieval.
S27KS0642GABHI023
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Length: 8 mm; No. of Ports: 1;
S70KL1282DPBHA023
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Technology: CMOS;
MT48LC4M16A2P-6AIT:JTR
Micron Technology's MT48LC4M16A2P-6AIT:JTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at up to 167MHz clock frequency. Ideal for industrial applications, it offers a memory density of 67108864 bits and supports common I/O type with self-refresh capability.
K4B1G1646G-BCNB
Samsung
Samsung's K4B1G1646G-BCNB is a 64MX16 DDR3 DRAM with 1073741824 bit memory density. It operates at a max clock frequency of 1066 MHz and has a peak reflow temperature of 260°C. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT53E512M32D1ZW-046AIT:B
Micron Technology's MT53E512M32D1ZW-046AIT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features self-refresh mode, common I/O type, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption in automotive electronics and industrial devices.
MT41K512M8DA-107AAT:PTR
DDR3L DRAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER;
MT53E512M32D1ZW-046IT:B
Micron Technology's MT53E512M32D1ZW-046IT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MT46H32M16LFBF-6IT:CTR
Micron Technology's MT46H32M16LFBF-6IT:CTR is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access times and high memory capacity in compact devices.
MT41K128M16JT-125IT
Micron Technology's MT41K128M16JT-125IT is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.
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MT47H64M16NF-25EIT:M
MT47H64M16NF-25EIT:M by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features 1.8V supply voltage, 84 terminals in a grid array package style, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H64M16NF-25EIT:MTR
Micron Technology's MT47H64M16NF-25EIT:MTR is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast access times in a compact form factor.
MT47H64M16NF-25E:M
Micron Technology's MT47H64M16NF-25E:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features a 1.8V nominal voltage and offers 67108864 words of memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H64M16NF-25EXIT:M
Micron Technology's MT47H64M16NF-25EXIT:M is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access times, and multi-bank page burst access mode.
MT47H64M16NF-25EAIT:M
Micron Technology's MT47H64M16NF-25EAIT:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics and industrial control systems.
MT47H64M16NF-25E:MTR
MT47H64M16NF-25E:MTR by Micron Technology is a 1.8V DDR2 DRAM with 64M words and 16-bit memory width. It operates synchronously, has self-refresh capability, and can withstand temperatures up to 85°C. It is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.
MT47H128M16RT-25EAIT:CTR
DDR2 DRAM; Terminal Finish: TIN SILVER COPPER;
MT47H128M16RT-25EIT:C
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT47H64M16NF-25EAAT:MTR
Micron Technology's MT47H64M16NF-25EAAT:MTR is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in automotive electronics or industrial control systems.
MT47H128M16RT-25E:C
MT47H128M16RT-25E:C by Micron Technology is a 128MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H128M16RT-25EAIT:C
Micron Technology's MT47H128M16RT-25EAIT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and offers multi-bank page burst access mode. This industrial-grade memory IC has a thin profile grid array package suitable for various applications requiring high-speed synchronous operation.
MT47H32M16NF-25EIT:HTR
Micron Technology's MT47H32M16NF-25EIT:HTR is a DDR2 DRAM with 32MX16 organization and 33554432 words. It operates synchronously at a voltage of 1.8V, has a temperature range of -40 to 85°C, and is suitable for industrial applications.
MT47H128M16RT-25E:CTR
Micron Technology's MT47H128M16RT-25E:CTR is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Suitable for applications requiring high memory density and fast access times in a compact package.
MT47H32M16NF-25EIT:H
Micron Technology's MT47H32M16NF-25EIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, 84 terminals in a thin profile grid array package, and AEC-Q100 screening for industrial applications.
MT47H128M16RT-25EXIT:C
Micron Technology's MT47H128M16RT-25EXIT:C is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in industrial environments.
MT47H128M16RT-25EAAT:C
Micron Technology's MT47H128M16RT-25EAAT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT47H64M16NF-25EAAT:M
Micron Technology's MT47H64M16NF-25EAAT:M is a DDR2 DRAM with 64MX16 organization, operating at a max clock frequency of 400 MHz. It has a memory density of 1,073,741,824 bits and is commonly used in applications requiring high-speed synchronous memory.
MT47H32M16NF-25EAIT:H
Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.
MT47H64M16HR-3IT:HTR
Micron Technology's MT47H64M16HR-3IT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and fast access times in industrial environments.
MT47H128M8SH-25EIT:M
Micron Technology's MT47H128M8SH-25EIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
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