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IS42S81600F-7TLI-TR

Integrated Silicon Solution

IS42S81600F-7TLI-TR by Integrated Silicon Solution

IS42S81600F-7TLI-TR by Integrated Silicon Solution is a 16MX8 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 17,280 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Aztec Data Supply Inc.

USA . 3,355 parts In-Stock

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$3.842

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$3.842

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Corohmni

South Africa . 939 parts In-Stock

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$4.202

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939

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AZTECH Wire

Italy . 663 parts In-Stock

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$8.230

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663

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Continental Prestige Electronics

USA . 3,317 parts In-Stock

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Argo Parts USA

USA . 2,734 parts In-Stock

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Aranea Global

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Overview

Experience the superior quality and performance of the IS42S81600F-7TLI-TR from Integrated Silicon Solution, a leading manufacturer in the DRAM category. This cutting-edge product boasts a range of applications, providing customers with unparalleled value and benefits. With a high level of reliability and efficiency, this memory IC type offers seamless operation and optimal performance for various industrial needs. Trust in ISS for top-of-the-line technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body ensures durability and protection for the internal components of the DRAM, making it a reliable choice for long-term use.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is commonly used in many electronic devices, making this DRAM compatible with a wide range of systems and applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C allows this DRAM to function effectively even in industrial environments or applications where temperature fluctuations may occur.

Memory IC Type: SYNCHRONOUS DRAM

The synchronous DRAM technology used in this product ensures faster data transfer speeds and efficient performance, making it suitable for high-demand computing tasks.

Maximum Access Time: 5.4 ns

The low maximum access time of 5.4 nanoseconds enables quick retrieval of data, resulting in improved overall system speed and responsiveness.

Technical Specifications

DRAM IS42S81600F-7TLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

5.4 ns

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

100 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Trade Compliance

IS42S81600F-7TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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