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MT48LC4M32B2P-6IT:G

Micron Technology

MT48LC4M32B2P-6IT:G by Micron Technology

Micron Technology's MT48LC4M32B2P-6IT:G is a 3.3V Synchronous DRAM with 4MX32 organization, operating at -40 to 85 °C. It features self-refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for industrial applications requiring high memory density and synchronous operation.

Median Price

$4.460

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$4.460

100+ parts

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50

$4.460

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Vyrian

USA . 3,762 parts In-Stock

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3,762

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Digiode

USA . 1,231 parts In-Stock

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1,231

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Chip Stock

USA . 575 parts In-Stock

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575

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Bristol Electronics

USA . 29 parts In-Stock

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29

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Semtec, LLC

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 11,960 parts In-Stock

1+ parts

$2.798

100+ parts

-

1k+ parts

$2.686

10k+ parts

$2.686

11,960

$2.798

-

$2.686

$2.686

Aztec Data Supply Inc.

USA . 273 parts In-Stock

1+ parts

$3.502

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273

$3.502

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Argo Parts USA

USA . 2,936 parts In-Stock

1+ parts

$4.460

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2,936

$4.460

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Continental Prestige Electronics

USA . 1,365 parts In-Stock

1+ parts

$4.460

100+ parts

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1k+ parts

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10k+ parts

$4.371

1,365

$4.460

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$4.371

Netroflash

USA . 50 parts In-Stock

1+ parts

$4.460

100+ parts

-

1k+ parts

$4.237

10k+ parts

$4.148

50

$4.460

-

$4.237

$4.148

Corohmni

South Africa . 327 parts In-Stock

1+ parts

$4.969

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327

$4.969

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Ampacity Inc.

Singapore . 1,357 parts In-Stock

1+ parts

$9.000

100+ parts

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1,357

$9.000

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AZTECH Wire

Italy . 221 parts In-Stock

1+ parts

$12.807

100+ parts

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221

$12.807

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Corphita

USA . 1,747 parts In-Stock

1+ parts

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1,747

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Microchip USA

USA . 349 parts In-Stock

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349

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Speed Components Ltd (Excess)

Israel . 8 parts In-Stock

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Overview

Discover the cutting-edge MT48LC4M32B2P-6IT:G by Micron Technology, a top-tier manufacturer in the DRAM industry. This high-quality synchronous memory module offers unparalleled reliability and performance, making it ideal for industrial applications where speed and efficiency are key. With a compact design and advanced features like self-refresh capability, this product ensures seamless operation even in extreme temperatures. Trust Micron Technology to deliver innovative solutions that elevate your technology experience. Elevate your systems with the MT48LC4M32B2P-6IT:G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for a variety of applications.

Surface Mount: YES

With the option for surface mounting, this product can easily be integrated into existing circuit boards, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space and easy placement within electronic devices.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise and coordinated data transfers, enhancing overall system efficiency.

Self Refresh: YES

The self-refresh capability helps to conserve power and maintain data integrity, making this product energy-efficient and reliable.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage provides a balance between performance and power consumption, making this product suitable for a variety of applications.

No. of Terminals: 86

With 86 terminals, this product offers versatile connectivity options and compatibility with a range of devices and systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile package style allows for easy integration into space-constrained environments.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product is designed to withstand high-temperature environments.

Organization: 4MX32

The 4MX32 organization provides a high memory capacity and efficient data storage capabilities, ideal for high-performance applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this product is suitable for use in extreme cold conditions.

Terminal Finish: Tin (Sn)

The tin terminal finish provides good electrical conductivity and corrosion resistance, ensuring the reliability and longevity of this product.

Terminal Position: DUAL

The dual terminal position allows for secure and stable connections, reducing the risk of signal loss or interference.

Maximum Seated Height: 1.2 mm

With a maximum seated height of 1.2mm, this product offers a compact form factor and efficient use of space.

Width: 10.16 mm

The 10.16mm width of this product allows for easy installation and integration into various electronic devices and systems.

Minimum Supply Voltage (Vsup): 3 V

The 3V minimum supply voltage ensures reliable and stable performance, making this product well-suited for critical applications.

Length: 22.22 mm

The 22.22mm length of this product offers a balanced combination of compact size and high memory capacity.

Temperature Grade: INDUSTRIAL

The industrial temperature grade design ensures reliable performance in harsh environments and industrial settings.

Access Mode: FOUR BANK PAGE BURST

The four bank page burst access mode allows for fast and efficient data access, enhancing overall system performance.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high-speed data processing capabilities, making it an energy-efficient and high-performance choice.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and efficient heat dissipation, ensuring the reliability and longevity of this product.

No. of Words: 4194304 words

With 4,194,304 words, this product offers a large memory capacity and efficient data storage capabilities, ideal for data-intensive applications.

Memory Width: 32

The 32-bit memory width provides efficient data processing and storage capabilities, making this product suitable for high-performance computing tasks.

Terminal Pitch: 0.5 mm

The 0.5mm terminal pitch allows for precise and compact terminal arrangements, enhancing the connectivity and reliability of this product.

No. of Words Code: 4M

The 4M words code offers a standardized and efficient way to manage and access large amounts of data, making this product easy to integrate and use.

Maximum Supply Voltage (Vsup): 3.6 V

The 3.6V maximum supply voltage provides a margin of safety and compatibility with a wide range of power sources, ensuring the stability and reliability of this product.

Memory Density: 134217728 bit

With 134,217,728 bits of memory density, this product offers high storage capacity and efficient data processing capabilities, making it suitable for data-intensive applications.

Memory IC Type: SYNCHRONOUS DRAM

The synchronous DRAM memory IC type ensures fast and synchronized data access, making this product suitable for high-speed and real-time applications.

Maximum Access Time: 5.5 ns

With a maximum access time of 5.5 nanoseconds, this product offers fast data retrieval and processing capabilities, enhancing system performance and responsiveness.

Technical Specifications

DRAM MT48LC4M32B2P-6IT:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MT48LC4M32B2P-6IT:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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