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IS42S16800F-6TLI-TR

Integrated Silicon Solution

IS42S16800F-6TLI-TR by Integrated Silicon Solution

IS42S16800F-6TLI-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85 °C operating temp. Ideal for industrial applications requiring high-speed memory access in a small outline package.

Median Price

$2.245

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1,500 parts In-Stock

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Vyrian

USA . 4,404 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,180 parts In-Stock

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$4.640

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Corohmni

South Africa . 122 parts In-Stock

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$5.564

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AZTECH Wire

Italy . 235 parts In-Stock

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$20.180

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Argo Parts USA

USA . 3,010 parts In-Stock

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Continental Prestige Electronics

USA . 2,362 parts In-Stock

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Infinite Electronics LLP (Excess)

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Unlock unparalleled speed and performance with the IS42S16800F-6TLI-TR by Integrated Silicon Solution. This cutting-edge DRAM boasts top-tier quality and reliability, perfect for a wide range of applications. From industrial to consumer electronics, this versatile memory solution offers unmatched value and benefits. Elevate your projects with seamless functionality and efficiency, thanks to the advanced technology and innovative design of this product. Trust in Integrated Silicon Solution to deliver exceptional performance and elevate your experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This lightweight and durable material helps in reducing the overall weight of the product, making it easier to handle and install.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently with a common supply voltage of 3.3V, making it compatible with various systems and applications.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures up to 85°C, ensuring reliable performance even in harsh operating conditions.

Organization: 8MX16

With an organization of 8 megabits x 16, this product offers a high memory capacity and data transfer rates suitable for demanding applications.

Technology: CMOS

Utilizes CMOS technology which provides low power consumption, high speed, and reliable performance, making it a cost-effective and efficient choice.

Maximum Access Time: 5.4 ns

Offers quick data access with a maximum access time of 5.4 nanoseconds, ensuring fast and efficient operation for high-performance computing tasks.

Technical Specifications

DRAM IS42S16800F-6TLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

5.4 ns

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

120 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Trade Compliance

IS42S16800F-6TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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