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NT6SM16M32AK-S1

Nanya Technology

NT6SM16M32AK-S1 by Nanya Technology

NT6SM16M32AK-S1 by Nanya Technology is a 16MX32 Synchronous DRAM with 16777216 words, 536870912 bit memory density, and operates at a max clock frequency of 166 MHz. Ideal for applications requiring fast data access and storage in devices like smartphones, tablets, and networking equipment.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Bristol Electronics

USA . 2,141 parts In-Stock

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 612 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Bastille Electronics

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Overview

Experience superior performance and reliability with the NT6SM16M32AK-S1 from Nanya Technology. As a leading manufacturer in the DRAM category, Nanya Technology provides top-notch products that are perfect for a wide range of applications. With its synchronous operation and self-refresh capabilities, this memory module offers unmatched efficiency and seamless integration. Customers can trust in the quality and value that Nanya Technology brings to the table, making the NT6SM16M32AK-S1 an excellent choice for all their memory needs. Elevate your systems with this high-quality product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable.

Surface Mount: YES

With surface mount capability, this DRAM can be easily integrated into various electronic devices for efficient performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and installation in circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures reliable and consistent data transfer in real-time applications.

Self Refresh: YES

The self-refresh feature helps in preserving data integrity and reducing power consumption during idle periods.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal supply voltage of 1.8V ensures energy efficiency and stable performance.

Power Supplies (V): 1.8

The use of a single 1.8V power supply simplifies the power management system of the device.

No. of Terminals: 90

With 90 terminals, this DRAM provides ample connectivity options for seamless integration into systems.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array package style with a thin profile and fine pitch design enhances signal integrity and reduces footprint.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of 85°C ensures reliable performance even in extreme conditions.

Technical Specifications

DRAM NT6SM16M32AK-S1 attributes and parameters. Explore more DRAM devices from Nanya Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B90

Length:

13 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.00001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

105 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

NT6SM16M32AK-S1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

Manufacturer Highlights

Nanya Technology

Nanya Technology holds innovation as our core value which is realized in the company’s dedication to research and develop, design, manufacture, marketing, and sales of Dynamic Random Access Memory (DRAM). Nanya’s commitment to research and development has enabled the company to accumulate extensive DRAM expertise and intellectual property. As a true leader in corporate citizenship, Nanya has proactively implemented green manufacturing technology. Nanya has harnessed the power of artificial intelligence (AI) to significantly upgrade production capacity and efficiency. The result is a company that provides industry leading DRAM solutions in a way that is environmentally friendly to our planet

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