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AS4C512M16D3LC-12BIN

Alliance Memory

AS4C512M16D3LC-12BIN by Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

Median Price

$56.850

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 44 parts In-Stock

1+ parts

$56.850

100+ parts

$48.340

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44

$56.850

$48.340

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Distributors (In-Stock)

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$19.660

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150

$19.660

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Kruse Electronics AG

Switzerland . 57,468 parts In-Stock

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ARCO, INC.

USA . 57,400 parts In-Stock

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Kruse

Germany . 44,544 parts In-Stock

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Vyrian

USA . 5,697 parts In-Stock

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5,697

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VNN

France . 4,437 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 167 parts In-Stock

1+ parts

$5.020

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167

$5.020

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AZTECH Wire

Italy . 379 parts In-Stock

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$10.778

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379

$10.778

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Aranea Global

USA . 1,000 parts In-Stock

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$19.267

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$18.496

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1,000

$19.267

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$18.496

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Continental Prestige Electronics

USA . 893 parts In-Stock

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$19.660

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$19.267

893

$19.660

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$19.267

Argo Parts USA

USA . 3,573 parts In-Stock

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Overview

Looking for high-quality DRAM solutions? Look no further than the AS4C512M16D3LC-12BIN by Alliance Memory. With a reputation for excellence in memory technology, Alliance Memory delivers reliable products that cater to a wide range of applications. This DDR3L DRAM offers exceptional value with its common I/O type, self-refresh capability, and synchronous operation mode. Experience seamless performance, efficient power consumption, and versatile use with the AS4C512M16D3LC-12BIN. Trust Alliance Memory to provide you with cutting-edge memory solutions that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability in various operating conditions.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation onto PCBs.

Operating Mode: SYNCHRONOUS

Synchronous operation enables precise data transfer timings for improved performance.

Nominal Supply Voltage / Vsup (V): 1.35

Efficient power usage at a low voltage of 1.35V helps in reducing energy consumption.

Maximum Clock Frequency (fCLK): 800 MHz

High clock frequency of 800 MHz ensures fast data processing and transfer speeds.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall reliability.

Memory IC Type: DDR3L DRAM

DDR3L DRAM technology provides high-speed and efficient memory operations for improved system performance.

Technical Specifications

DRAM AS4C512M16D3LC-12BIN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

Length:

13 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.016 Amp

Maximum Supply Current:

350 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

AS4C512M16D3LC-12BIN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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