Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Alliance Memory's AS4C512M16D3L-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
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The plastic/epoxy material used for the package body is durable and reliable, ensuring the long-term performance of the product.
Synchronous operation helps in achieving high-speed data transfers and efficient performance.
The low nominal supply voltage of 1.35V makes the product energy-efficient and reduces power consumption.
With a high maximum clock frequency of 800 MHz, this product can handle demanding applications and provide fast processing speeds.
CMOS technology used in this product ensures low power consumption and high speed performance.
DRAM AS4C512M16D3L-12BCN attributes and parameters. Explore more DRAM devices from Alliance Memory
Access Mode:
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AS4C512M16D3L-12BCN Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Obsolescence/ EOL - AS4C512M16D3L 07/Mar/2021
Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.
1N4148WS
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
General Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
ULN2803A
STMicroelectronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;
BSS138BK,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
KSZ9031RNXIC
Microchip Technology
KSZ9031RNXIC by Microchip Technology is a network interface chip with 1 transceiver. It operates at a data rate of 1000 Mbps and has a nominal voltage of 1.2V. This chip is commonly used in industrial applications requiring Ethernet connectivity.
ULN2803ADW
Texas Instruments
ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.
LM107H
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;
BAV99
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDN306P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
MBRS360T3G
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
1N4148WT
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
Changzhou Galaxy Century Microelectronics
LM358MX
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
FDC5614P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Daco Semiconductor
Diodes Incorporated
S27KS0642GABHI023
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Length: 8 mm; No. of Ports: 1;
MT40A512M8SA-062EIT:F
Micron Technology
Micron Technology's MT40A512M8SA-062EIT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access with its four-bank page burst access mode.
IS42S16400J-7TL
Integrated Silicon Solution
IS42S16400J-7TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. Ideal for commercial applications requiring fast access time of 5.4 ns and memory density of 67108864 bits in a small outline package.
S70KL1283DPBHV020
S70KL1283DPBHV020 by Infineon Technologies is a 16MX8 DRAM with 16777216 words and memory density of 134217728 bits. Operating at a max clock frequency of 166 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact electronic devices.
K4A8G085WB-BCPB
Samsung
Samsung's K4A8G085WB-BCPB DDR4 DRAM features 1066 MHz clock frequency, 78 terminals, and 1.2V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage with a memory density of 8.59 Gb.
S27KL0642GABHB020
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON; Package Equivalence Code: BGA24,5X5,40;
MT40A1G8SA-062E:R
Micron Technology's MT40A1G8SA-062E:R is a DDR4 DRAM with 1.2V supply voltage, 1GX8 organization, and 1073741824 words capacity. It operates synchronously with self-refresh capability and common I/O type. Ideal for applications requiring high memory density and fast data access in thin profile devices.
AS4C128M16MD4-062BAN
Alliance Memory
Alliance Memory's AS4C128M16MD4-062BAN is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency, 1.1V supply voltage, and -40 to 105°C operating temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.
MT53E256M32D2DS-046AUT:B
Micron Technology's MT53E256M32D2DS-046AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a very thin profile package style with 200 terminals and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
K4B1G1646G-BCH9
Samsung's K4B1G1646G-BCH9 DDR3 DRAM features 64MX16 organization, 667 MHz clock frequency, and 67108864 words capacity. Ideal for high-performance applications requiring fast memory access and data processing with a max standby current of 0.01 Amp.
MT40A2G16TBB-062E:F
Micron Technology's MT40A2G16TBB-062E:F is a DDR4 DRAM with 2GX16 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in thin-profile devices.
MT40A1G8WE-083EAUT:B
Micron Technology's MT40A1G8WE-083EAUT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O. The AEC-Q100 screening level makes it ideal for automotive and industrial environments.
AS4C32M16SB-7TINTR
SYNCHRONOUS DRAM; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;
K4S561632E-TC75T00
Samsung's K4S561632E-TC75T00 is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.
MT48LC16M16A2B4-7E:G
Micron Technology's MT48LC16M16A2B4-7E:G is a 16MX16 DRAM with 3.3V supply, 143 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high-speed memory with common I/O type and self-refresh capability in a compact grid array package.
MT46V16M16CY-5BIT:M
Micron Technology's MT46V16M16CY-5BIT:M is a 16MX16 DDR1 DRAM with 16777216 words. It operates synchronously at up to 200 MHz, with a supply voltage of 2.6V and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
AS4C16M16SA-6BINTR
Alliance Memory's AS4C16M16SA-6BINTR is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, 85°C operating temp. Ideal for industrial applications, it features common I/O type, self-refresh mode, and thin profile grid array package.
MT41K128M16HA-15E:D
Micron Technology's MT41K128M16HA-15E:D is a DDR3L DRAM with 128MX16 organization, operating at 667 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
KM44C1000BT-7
Samsung's KM44C1000BT-7 is a 1MX4 DRAM with 70ns access time, operating at 5V. It features 3-STATE output and fast page access mode, suitable for commercial applications requiring high memory density and low standby current. The package is small outline with dual terminal position, making it ideal for space-constrained designs.
MT53D512M32D2DS-046AUT:D
Micron Technology's MT53D512M32D2DS-046AUT:D is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial systems.
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AS4C256M16D4-83BCN
Alliance Memory's AS4C256M16D4-83BCN is a 256MX16 DDR4 DRAM with 1200 MHz clock frequency, 95°C operating temp, and 1.2V supply voltage. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
AS4C256M16D4-83BIN
Alliance Memory's AS4C256M16D4-83BIN is a 256MX16 DDR4 DRAM with 1200 MHz clock frequency, 95°C operating temp, and 1.2V supply. Ideal for industrial applications requiring high memory density and fast data access in thin profile devices.
AS4C512M8D4-83BCN
Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.
AS4C256M16D4-75BCN
Alliance Memory's AS4C256M16D4-75BCN is a 256MX16 DDR4 DRAM with 1333 MHz clock frequency, 95°C max temp, and 1.2V nominal supply. Ideal for applications requiring high-speed synchronous operation in compact electronic devices.
AS4C512M8D4-83BIN
Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
AS4C512M16D3LA-10BIN
DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;
AS4C512M8D4-75BCN
Alliance Memory's AS4C512M8D4-75BCN is a 512MX8 DDR4 DRAM with 1333 MHz clock frequency, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
AS4C512M8D4-75BIN
Alliance Memory's AS4C512M8D4-75BIN is a DDR4 DRAM with 512MX8 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
AS4C512M16D3LB-12BCN
Alliance Memory's AS4C512M16D3LB-12BCN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 95°C operating temperature. Ideal for applications requiring high-speed synchronous memory with low power consumption and common I/O type.
AS4C512M16D3LC-12BCN
DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Interleaved Burst Length: 4,8;
AS4C512M16D3LA-10BCN
Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.
AS4C16M16SA-7TCNTR
SYNCHRONOUS DRAM; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Length: 22.22 mm;
AS4C16M16SA-7TCN
SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
AS4C256M16D3LC-12BIN
DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Supply Current: 235 mA;
AS4C8M16SA-6TIN
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Ports: 1;
AS4C16M16SA-6TINTR
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
AS4C256M16D3LC-12BINTR
AS4C16M16SA-6TIN
AS4C16M16SA-6TIN by Alliance Memory is a 16MX16 Synchronous DRAM with a clock frequency of 166 MHz. It operates at a voltage of 3.3V and has a temperature range of -40 to 85°C. This memory chip is commonly used in industrial applications requiring high-speed data storage and retrieval.
AS4C512M16D3L-12BIN
Alliance Memory's AS4C512M16D3L-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, operating at 1.35V. It features multi-bank page burst access mode and offers 8192 refresh cycles. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
AS4C512M16D3LC-10BIN
DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
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