Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IS43R16320D-6BL by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with a max clock frequency of 166 MHz. It operates synchronously and has a memory density of 536870912 bit. It is commonly used in applications requiring high-speed data storage and retrieval.
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PLASTIC/EPOXY - This product's plastic/epoxy package body material ensures durability and protection for the DRAM, making it a reliable choice.
YES - With the ability to be surface mounted, this DRAM can be easily integrated into various electronic devices, simplifying the manufacturing process.
1 - With a single function, this DRAM is designed for specific tasks, ensuring efficient performance and optimized resource allocation.
RECTANGULAR - The rectangular package shape allows for easy placement and integration within electronic circuitry, enhancing the overall design flexibility.
SYNCHRONOUS - The synchronous operating mode of this DRAM ensures precise data transfer and synchronization, resulting in improved system performance.
YES - The self-refresh capability of this DRAM enables it to retain data even during power outages, providing uninterrupted operation and reliability.
COMMON - The common input/output type facilitates compatibility and ease of integration with other components, enhancing versatility and system compatibility.
2.5 - This DRAM operates with a stable and standard nominal supply voltage of 2.5V, ensuring reliable and consistent performance.
2.5 - With a power supply rating of 2.5V, this DRAM efficiently meets its power requirements while delivering high-performance computing capabilities.
60 - The 60 terminals provide ample connectivity options, enabling seamless integration with other components and systems.
GRID ARRAY, THIN PROFILE - The grid array and thin profile package style offers space efficiency and easy installation, making it an ideal choice for compact electronic devices.
70 °C - The ability to operate at a maximum temperature of 70 °C ensures the DRAM's reliability and performance in challenging environments.
32MX16 - With an organization of 32M words by 16 bits, this DRAM offers a significant memory capacity for data storage, catering to demanding applications.
3-STATE - The 3-state output characteristics allow multiple devices to share the same data bus, enhancing resource utilization and system efficiency.
0 °C - The ability to operate at a minimum temperature of 0 °C ensures the DRAM's reliability and performance in various operating conditions.
TIN SILVER COPPER - The terminal finish of tin, silver, and copper offers excellent conductivity, corrosion resistance, and durability, ensuring long-term reliability.
BOTTOM - With the terminal position at the bottom, the DRAM can be easily mounted and connected, optimizing space utilization and facilitating the manufacturing process.
1 - With a single port, this DRAM efficiently handles data transfer and improves system responsiveness, making it suitable for various applications.
1.2 mm - The maximum seated height of 1.2 mm allows for low-profile installation, enabling the usage of the DRAM in slim and compact devices.
166 MHz - With a maximum clock frequency of 166 MHz, this DRAM delivers fast data processing capabilities, enhancing system performance.
8 mm - The compact width of 8 mm ensures space efficiency during installation and integration, making it suitable for small form factor devices.
2.3 V - The minimum supply voltage of 2.3V ensures power-efficient operation while maintaining stable performance, making it an energy-efficient choice.
13 mm - With a length of 13 mm, this DRAM can be easily accommodated in various electronic designs, providing flexibility in system layout.
COMMERCIAL - This DRAM's commercial temperature grade ensures reliable and stable performance within standard operating conditions, making it suitable for general-purpose applications.
FOUR BANK PAGE BURST - The four bank page burst access mode optimizes data retrieval speed and enhances memory efficiency, enabling faster and more efficient computing.
CMOS - Built using CMOS technology, this DRAM offers low power consumption, high-speed operation, and improved reliability, making it an excellent choice for energy-efficient devices.
BALL - The ball terminal form enables secure and reliable electrical connections, ensuring stable data transfer and enhanced longevity.
370 mA - With a maximum supply current of 370 mA, this DRAM efficiently manages power consumption, optimizing energy efficiency and prolonging device battery life.
33554432 words - The large number of words (33554432) ensures ample storage capacity for data, making this DRAM suitable for memory-intensive applications.
2,4,8 - The ability to support sequential burst lengths of 2, 4, and 8 improves data transfer efficiency and maximizes system performance.
16 - With a memory width of 16 bits, this DRAM delivers high data throughput and enables efficient processing of large datasets, enhancing overall system performance.
1 mm - The terminal pitch of 1 mm allows for easy interconnection and integration with other components, facilitating efficient data flow and system reliability.
32M - The 32M words code provides a substantial memory capacity for storing and accessing data, making this DRAM ideal for memory-intensive applications.
2.7 V - The maximum supply voltage of 2.7V ensures stable and reliable performance, making this DRAM suitable for a wide range of applications.
536870912 bit - With a memory density of 536870912 bits (512Mb), this DRAM offers ample storage space for data, meeting the requirements of memory-intensive tasks.
DDR1 DRAM - The DDR1 DRAM IC type ensures fast and reliable data transfers, making this product suitable for high-speed computing and memory-demanding applications.
0.025 Amp - With a maximum standby current of only 0.025 Amp, this DRAM conserves power during idle periods, contributing to energy efficiency and prolonged battery life.
8192 - The refresh cycles of 8192 ensure data integrity and prevent loss or degradation of stored information, ensuring the reliability of this DRAM.
2,4,8 - The support for interleaved burst lengths of 2, 4, and 8 facilitates efficient data transfer and maximizes system performance in memory-intensive applications.
0.7 ns - With a maximum access time of only 0.7 ns, this DRAM provides fast data access and retrieval, minimizing latency and enhancing overall system responsiveness.
DRAM IS43R16320D-6BL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution
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IS43R16320D-6BL Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.28
SB
8542.32.00.15
ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.
NC7WZ07P6X
Onsemi
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
MBR0520LT1
Motorola
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
L7805CV
STMicroelectronics
L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.
LM7805CT
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
2N2222A
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
DS18B20Z+
Analog Devices
DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Digitron Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SS14
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;
CRGCQ0805F10R
TE Connectivity
TE Connectivity's CRGCQ0805F10R is a 10 ohm fixed resistor with 1% tolerance and 400 ppm/°C temperature coefficient. It is a surface mount thick film resistor in an 0805 package, suitable for applications requiring precise resistance values in compact electronic circuits.
CRG0805F10K
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.
BSS123LT1G
BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.
DS18B20U
Maxim Integrated
DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
TCA6424ARGJR
Texas Instruments
TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.
OPA2227UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Semiconductors
SMBJ18CA
Sensitron Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
BAV99
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MT41K256M16HA-125M:E
Micron Technology
Micron Technology's MT41K256M16HA-125M:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes up to 239 mA at 1.35V. Ideal for applications requiring high-speed synchronous memory with low power consumption.
MT41K128M16JT-125:KTR
Micron Technology's MT41K128M16JT-125:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package with grid array style is suitable for applications requiring high memory density and fast data processing.
MT61K256M32JE-14:A
Micron Technology's MT61K256M32JE-14:A is a 256MX32 DRAM with synchronous operation and self-refresh capability. It features a memory density of 8Gb, operates at 1.25V, and has a peak reflow temperature of 260°C. Ideal for applications requiring high-speed data processing in graphics systems or other memory-intensive tasks.
AS4C32M16SB-7TIN
Alliance Memory
Alliance Memory's AS4C32M16SB-7TIN is a 32MX16 SDRAM with 3.3V supply, operating from -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in compact form factors.
W9825G6JB-6
Winbond Electronics
W9825G6JB-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for applications requiring high-speed data processing such as networking equipment and industrial automation systems.
MT42L128M32D1TK-25AAT:A
Micron Technology's MT42L128M32D1TK-25AAT:A is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Ideal for applications requiring high memory density and low power consumption in compact devices.
IS42S32800J-7BL-TR
Integrated Silicon Solution
IS42S32800J-7BL-TR by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a memory width of 32 bits, and offers a max access time of 5.4ns. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
K4H561638N-LCB3
Samsung
Samsung's K4H561638N-LCB3 DDR1 DRAM features 16MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.
W631GU6NB12I
W631GU6NB12I by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 1Gb and is suitable for industrial temperature grade applications.
MT48LC8M16A2TG-75IT:GTR
Micron Technology's MT48LC8M16A2TG-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 8388608 words and 134217728 bit memory density. Operating in industrial temperature range, it features self-refresh capability and offers fast access time of 5.4 ns. Ideal for applications requiring high-speed data processing and reliable memory performance.
KMM591000B-8
Samsung's KMM591000B-8 is a 1MX9 DRAM module with 1048576 words, 9437184 bit memory density, and 80 ns max access time. It operates in fast page access mode at a nominal voltage of 5V. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
NT5CC128M16JR-EKT
Nanya Technology
NT5CC128M16JR-EKT by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
S70KL1282DPBHI020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Technology: CMOS;
MT48H32M16LFB4-6IT:C
Micron Technology's MT48H32M16LFB4-6IT:C is a DDR DRAM with 32MX16 organization, operating at 166 MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.
MT47H128M8SH-25EAIT:M
Micron Technology's MT47H128M8SH-25EAIT:M is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access such as automotive electronics or industrial control systems.
MT46H32M16LFBF-6AIT:C
MT46H32M16LFBF-6AIT:C by Micron Technology is a 32MX16 DDR1 DRAM with a memory density of 536870912 bit. It operates at a max clock frequency of 166 MHz and has an operating temperature range of -40 to 85 °C. It is commonly used in industrial applications requiring high-speed synchronous memory.
MTA36ASF4G72PZ-2G3B1
Micron Technology's MTA36ASF4G72PZ-2G3B1 is a 4GX72 DDR DRAM MODULE with 309.2 Gb memory density and operates at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for high-performance computing applications requiring reliable and fast memory solutions.
AS4C64M16D2A-25BINTR
Alliance Memory's AS4C64M16D2A-25BINTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, operating at 1.8V. Suitable for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package style.
KM44C256AP-8
Samsung's KM44C256AP-8 is a 256Kx4 DRAM with 80ns access time, operating at 5V. It features fast page access mode and 512 refresh cycles, suitable for commercial temperature grade applications. With a memory density of 1048576 bits, it offers common I/O type and through-hole terminal form.
W631GG6NB11I
Winbond Electronics' W631GG6NB11I is a DDR3 DRAM with 64MX16 organization, operating at up to 933 MHz. It features a very thin profile grid array package and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
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IS43TR16256A-15HBLI
IS43TR16256A-15HBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 4294967296 bit memory density. It operates synchronously at 1.5V, featuring self-refresh and industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.
IS43TR16256BL-125KBLI
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43TR16256BL-125KBLI-TR
IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact grid array package.
IS43TR16256A-125KBLI
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
IS43TR16256B-125KBLI
IS43TR16256B-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for industrial temperature grades. This memory IC has a memory density of 4294967296 bit and is ideal for applications requiring high-speed data processing in compact electronic devices.
IS43TR16256AL-125KBLI
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
IS43TR16256B-125KBLI-TR
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43DR16640B-25DBLI
IS43DR16640B-25DBLI by Integrated Silicon Solution is a 64MX16 DDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 1073741824 bit. This DRAM is commonly used in industrial applications that require high-speed data storage and retrieval.
IS43TR16256AL-125KBL
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 9 mm;
IS43LR32160C-6BLI
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43TR16256BL-107MBLI-TR
DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Technology: CMOS;
IS43TR16128B-15HBLI
IS43TR16512BL-125KBLI
IS43TR16512BL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast data access speeds.
IS43TR16512S2DL-125KBLI
IS43TR16512S2DL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
IS43TR16256BL-107MBLI
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
IS43TR16512A-15HBLI
IS43TR16512A-15HBLI by Integrated Silicon Solution is a 512MX16 DDR3 DRAM with 1.5V supply voltage, synchronous operation, and self-refresh capability. It features a low-profile grid array package suitable for applications requiring dual bank page burst access mode and 16-bit memory width. Ideal for high-performance computing devices needing reliable memory solutions.
IS43DR81280B-3DBLI
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
IS43LD32128B-25BLI
IS43LD32128B-25BLI by Integrated Silicon Solution is a 128MX32 LPDDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 4,294,967,296 bits. This DRAM is commonly used in applications that require high-speed data storage and retrieval.
IS43LD32640B-18BLI-TR
LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
IS43LQ16128A-062BLI
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
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