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IS43TR16256B-125KBLI

Integrated Silicon Solution

IS43TR16256B-125KBLI by Integrated Silicon Solution

IS43TR16256B-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for industrial temperature grades. This memory IC has a memory density of 4294967296 bit and is ideal for applications requiring high-speed data processing in compact electronic devices.

Median Price

$15.540

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 479 parts In-Stock

1+ parts

$15.540

100+ parts

$13.320

1k+ parts

$12.560

10k+ parts

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479

$15.540

$13.320

$12.560

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Newark

USA . 26 parts In-Stock

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$17.670

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$17.670

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Element14

Singapore . 186 parts In-Stock

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$21.390

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186

$21.390

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Arrow

USA . 3,610 parts In-Stock

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$7.800

10k+ parts

$7.712

3,610

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$7.800

$7.712

Verical

USA . 3,610 parts In-Stock

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$7.800

10k+ parts

$7.712

3,610

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$7.800

$7.712

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$9.010

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50

$9.010

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Chip Stock

USA . 16,179 parts In-Stock

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Vyrian

USA . 3,298 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 66 parts In-Stock

1+ parts

$4.219

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66

$4.219

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Aztec Data Supply Inc.

USA . 4,187 parts In-Stock

1+ parts

$4.276

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$4.276

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Continental Prestige Electronics

USA . 2,766 parts In-Stock

1+ parts

$8.528

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$8.357

2,766

$8.528

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$8.357

Advanced Electronics

New Zealand . 59 parts In-Stock

1+ parts

$9.190

100+ parts

$9.190

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$9.190

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59

$9.190

$9.190

$9.190

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Component Stockers USA

USA . 2,719 parts In-Stock

1+ parts

$9.310

100+ parts

$7.500

1k+ parts

$6.920

10k+ parts

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2,719

$9.310

$7.500

$6.920

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iodParts Technologies Inc.

India . 60,000 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Argo Parts USA

USA . 4,132 parts In-Stock

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Lixinc

USA . 743 parts In-Stock

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743

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Netroflash

USA . 500 parts In-Stock

1+ parts

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$8.830

1k+ parts

$8.560

10k+ parts

$8.379

500

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$8.830

$8.560

$8.379

Perfect Parts

USA . 24 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the IS43TR16256B-125KBLI by Integrated Silicon Solution. As a leading manufacturer in the industry, this DDR3 DRAM offers superior quality and cutting-edge technology. Ideal for industrial applications, this memory module boasts multi-bank page burst access mode for optimized efficiency. Experience seamless operation with self-refresh capabilities and synchronous operating mode. Elevate your projects with the value and benefits of this high-quality product, designed to exceed expectations and deliver unmatched results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures longevity and reliability of the product.

Surface Mount: YES

Easy installation and space-saving design make this product convenient for various applications.

Package Shape: RECTANGULAR

The compact shape allows for efficient utilization of space on the circuit board.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances the data transfer speed and overall performance of the product.

Self Refresh: YES

Self-refresh capability helps in maintaining data integrity and system stability.

Nominal Supply Voltage / Vsup (V): 1.5

The optimal supply voltage ensures efficient power consumption and performance.

No. of Terminals: 96

The high number of terminals allows for versatile connectivity options.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

This package style provides high density and reliability in a small form factor.

Maximum Operating Temperature: 95 °C

The wide temperature range ensures reliable operation in various environments.

Organization: 256MX16

The organization of the product allows for efficient data storage and retrieval.

Minimum Operating Temperature: -40 °C

The low operating temperature range ensures the product can withstand harsh conditions.

Terminal Position: BOTTOM

The bottom terminal position allows for easy integration into the system.

Maximum Seated Height: 1.2 mm

The low profile design is ideal for applications with limited space constraints.

Width: 9 mm

The compact width allows for efficient placement on the circuit board.

Minimum Supply Voltage (Vsup): 1.425 V

The low minimum supply voltage ensures compatibility with various systems.

Length: 13 mm

The moderate length makes the product suitable for different form factors.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable performance in rugged environments.

Access Mode: MULTI BANK PAGE BURST

The multi bank page burst access mode enhances data transfer efficiency in multi-tasking applications.

Technology: CMOS

The CMOS technology ensures low power consumption and high performance.

Terminal Form: BALL

The ball terminal form provides secure and reliable connections.

No. of Words: 268435456 words

The high number of words allows for extensive data storage capacity.

Memory Width: 16

The wide memory width enhances data transfer speeds.

Terminal Pitch: 0.8 mm

The small terminal pitch allows for high-density integration.

No. of Words Code: 256M

The code signifies the high capacity of the product.

Maximum Supply Voltage (Vsup): 1.575 V

The maximum supply voltage ensures compatibility with a wide range of systems.

Memory Density: 4294967296 bit

The high memory density provides ample storage space for data.

Memory IC Type: DDR3 DRAM

The DDR3 DRAM type offers high-speed data transfer and efficient performance.

Technical Specifications

DRAM IS43TR16256B-125KBLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B96

Length:

13 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.575 V

Minimum Supply Voltage (Vsup):

1.425 V

Nominal Supply Voltage / Vsup (V):

1.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

9 mm

Trade Compliance

IS43TR16256B-125KBLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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