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IS43LR32160C-6BLI

Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution is a 16MX32 DDR1 DRAM with 166 MHz clock frequency. Operating at 1.8V, it offers 5.5 ns access time and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

Median Price

$9.230

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 395 parts In-Stock

1+ parts

$9.230

100+ parts

$7.970

1k+ parts

-

10k+ parts

-

395

$9.230

$7.970

-

-

DigiKey

USA . 240 parts In-Stock

1+ parts

$9.230

100+ parts

$8.121

1k+ parts

$7.375

10k+ parts

$7.237

240

$9.230

$8.121

$7.375

$7.237

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$7.770

100+ parts

-

1k+ parts

-

10k+ parts

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10

$7.770

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-

-

J2 Sourcing AB

Sweden . 52,930 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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52,930

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-

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Vyrian

USA . 6,092 parts In-Stock

1+ parts

-

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10k+ parts

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6,092

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,349 parts In-Stock

1+ parts

$7.770

100+ parts

-

1k+ parts

-

10k+ parts

$7.615

3,349

$7.770

-

-

$7.615

AZTECH Wire

Italy . 606 parts In-Stock

1+ parts

$19.746

100+ parts

-

1k+ parts

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10k+ parts

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606

$19.746

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Argo Parts USA

USA . 4,601 parts In-Stock

1+ parts

-

100+ parts

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4,601

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$7.615

1k+ parts

$7.381

10k+ parts

$7.226

500

-

$7.615

$7.381

$7.226

Perfect Parts

USA . 3 parts In-Stock

1+ parts

-

100+ parts

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3

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Overview

Unlock the power of cutting-edge technology with the IS43LR32160C-6BLI by Integrated Silicon Solution. This high-quality DRAM boasts unparalleled performance and reliability, making it a top choice for industrial applications. With its synchronous operation and self-refresh capabilities, this memory module offers seamless integration and enhanced efficiency. Experience lightning-fast speeds and improved productivity with this innovative product. Elevate your projects to the next level with the exceptional value and benefits that only Integrated Silicon Solution can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability for the package, making the product long-lasting.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination within the DRAM, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal supply voltage of 1.8V ensures efficient power consumption and compatibility with various systems.

Maximum Clock Frequency (fCLK): 166 MHz

With a high maximum clock frequency, this DRAM can handle data transfers at fast speeds, ideal for demanding applications.

Temperature Grade: INDUSTRIAL

Designed for industrial temperature ranges, this DRAM is suitable for harsh environments and critical operations.

Memory IC Type: DDR1 DRAM

Utilizing DDR1 DRAM technology ensures reliable and efficient memory performance, compatible with a wide range of systems.

Technical Specifications

DRAM IS43LR32160C-6BLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

2,4,8,16

JESD-30 Code:

R-PBGA-B90

Length:

13 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8,16

Maximum Standby Current:

.00001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

130 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

IS43LR32160C-6BLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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