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IS43DR16640B-25DBLI

Integrated Silicon Solution

IS43DR16640B-25DBLI by Integrated Silicon Solution

IS43DR16640B-25DBLI by Integrated Silicon Solution is a 64MX16 DDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 1073741824 bit. This DRAM is commonly used in industrial applications that require high-speed data storage and retrieval.

Median Price

$12.474

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 39 parts In-Stock

1+ parts

$9.166

100+ parts

$7.171

1k+ parts

$6.889

10k+ parts

-

39

$9.166

$7.171

$6.889

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Farnell

UK . 39 parts In-Stock

1+ parts

$9.603

100+ parts

$6.955

1k+ parts

$6.607

10k+ parts

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39

$9.603

$6.955

$6.607

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Mouser Electronics

USA . 721 parts In-Stock

1+ parts

$12.970

100+ parts

$11.180

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721

$12.970

$11.180

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DigiKey

USA . 20 parts In-Stock

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$12.970

100+ parts

$11.395

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$10.394

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20

$12.970

$11.395

$10.394

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Newark

USA . 209 parts In-Stock

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$15.560

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209

$15.560

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Verical

USA . 72 parts In-Stock

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$11.978

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72

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$11.978

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Distributors (In-Stock)

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Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$7.370

100+ parts

-

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650

$7.370

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Bristol Electronics

USA . 1,317 parts In-Stock

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1,317

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GLYN GmbH & Co. KG

Germany . 1,045 parts In-Stock

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1,045

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NAC Semi

USA . 627 parts In-Stock

1+ parts

-

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$6.500

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627

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$6.500

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Vyrian

USA . 467 parts In-Stock

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467

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Lantek

USA . 40 parts In-Stock

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Prism Electronics

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20

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 75 parts In-Stock

1+ parts

$3.480

100+ parts

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75

$3.480

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Corohmni

South Africa . 179 parts In-Stock

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$5.630

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179

$5.630

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Continental Prestige Electronics

USA . 142 parts In-Stock

1+ parts

$6.550

100+ parts

$4.610

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142

$6.550

$4.610

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$7.223

100+ parts

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$6.934

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100

$7.223

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$6.934

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$7.517

100+ parts

$7.517

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$7.517

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200

$7.517

$7.517

$7.517

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Microchip USA

USA . 344 parts In-Stock

1+ parts

$24.220

100+ parts

$23.870

1k+ parts

$23.700

10k+ parts

$23.530

344

$24.220

$23.870

$23.700

$23.530

Lixinc

USA . 2,579 parts In-Stock

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2,579

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Argo Parts USA

USA . 2,274 parts In-Stock

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Kepictronics

USA . 101 parts In-Stock

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101

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GreenTree Electronics

Israel . 57 parts In-Stock

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57

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iodParts Technologies Inc.

India . 43 parts In-Stock

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Overview

Experience high-quality performance and reliability with the IS43DR16640B-25DBLI by Integrated Silicon Solution. As a leading manufacturer in the industry, Integrated Silicon Solution delivers excellence in every product. This DDR2 DRAM offers exceptional value, benefits, and advantages to customers. With its multi-bank page burst access mode and common input/output type, it provides seamless functionality for various applications. Whether it's industrial or commercial use, this memory IC will exceed your expectations. Trust Integrated Silicon Solution for all your DRAM needs and unlock the full potential of your devices.

Feature Benefit Bullets

Package Body Material: Plastic/epoxy

This material provides durability and protection to the product, ensuring that it can withstand rough handling and environmental factors.

Surface Mount: Yes

The surface mount feature allows for easy installation and integration into various devices and systems, saving time and effort for the customer.

No. of Functions: 1

With a single function, the product is focused and optimized for its intended purpose, resulting in efficient performance and reliable operation.

Operating Mode: Synchronous

The synchronous operation ensures precise timing and synchronization of data, enhancing the overall efficiency and speed of the product.

Self Refresh: Yes

This feature allows the product to automatically refresh data without external intervention, reducing the workload on the customer and ensuring continuous and stable performance.

Nominal Supply Voltage / Vsup (V): 1.8

The low supply voltage minimizes power consumption, leading to energy savings and longer battery life for portable devices.

No. of Terminals: 84

The ample number of terminals facilitates easy connectivity and compatibility with a wide range of systems and devices.

Maximum Operating Temperature: 85°C

The high operating temperature tolerance ensures the product's reliability and stability even under demanding conditions or in hot environments.

Output Characteristics: 3-STATE

The 3-STATE output allows the product to enter a high-impedance state when not actively driving signals, reducing power consumption and enabling efficient data transmission.

Minimum Operating Temperature: -40°C

The product's ability to operate in extremely cold temperatures makes it suitable for use in various industries and environments with harsh conditions.

Maximum Clock Frequency (fCLK): 400 MHz

The high clock frequency enables fast data transfer and processing, enhancing the overall performance and responsiveness of the product.

Memory Width: 16

The wider memory width allows for greater data capacity and faster data retrieval, resulting in improved multitasking capabilities and smoother operation.

Maximum Standby Current: 0.015 Amp

The low standby current ensures minimal power consumption during idle periods, prolonging battery life and reducing energy costs.

Refresh Cycles: 8192

The high number of refresh cycles ensures the integrity and reliability of stored data, minimizing the risk of data loss or corruption.

Maximum Access Time: 0.4 ns

The fast access time enables quick retrieval and processing of data, facilitating smooth and efficient operation.

Memory Density: 1073741824 bit

The high memory density allows for storing large amounts of data, accommodating complex applications and supporting future growth.

Memory IC Type: DDR2 DRAM

This advanced memory technology offers faster data transfer rates and improved performance compared to previous generations, enhancing the overall speed and efficiency of the product.

Technical Specifications

DRAM IS43DR16640B-25DBLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

400 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B84

JESD-609 Code:

e1

Length:

12.5 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

84

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA84,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.015 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

270 mA

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

IS43DR16640B-25DBLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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