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MT48LC16M16A2P-7EAIT:G

Micron Technology

MT48LC16M16A2P-7EAIT:G by Micron Technology

Micron Technology's MT48LC16M16A2P-7EAIT:G is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, four bank page burst access, and offers 268MB memory density. Ideal for industrial applications requiring fast data processing in compact systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 5,152 parts In-Stock

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Vyrian

USA . 4,393 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Digiode

USA . 1,490 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Corohmni

South Africa . 78 parts In-Stock

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$3.747

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AZTECH Wire

Italy . 464 parts In-Stock

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Corphita

USA . 1,826 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,337 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

USA . 914 parts In-Stock

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Argo Parts USA

USA . 528 parts In-Stock

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Microchip USA

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Bastille Electronics

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Overview

Experience unparalleled performance and reliability with Micron Technology's MT48LC16M16A2P-7EAIT:G DRAM module. This top-of-the-line memory chip offers seamless synchronous operation and self-refresh capabilities, making it ideal for high-demand industrial applications. With a compact design and wide temperature range, this product ensures maximum efficiency even in the harshest conditions. Trust in Micron's reputation for quality and innovation, and elevate your projects with the unmatched value and benefits of the MT48LC16M16A2P-7EAIT:G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM, making it a reliable choice for various applications.

Surface Mount: YES

The surface mount feature allows for easy installation and PCB integration, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape of the package offers compatibility with standard PCB layouts, making it a versatile option for design engineers.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures precise timing and coordination, maximizing the performance of the DRAM in data-intensive tasks.

Self Refresh: YES

The self-refresh capability helps in conserving power and maintaining data integrity during standby modes, enhancing energy efficiency.

Nominal Supply Voltage (Vsup): 3.3V

The 3.3V supply voltage provides a balance between performance and power consumption, ideal for a wide range of applications.

No. of Terminals: 54

With 54 terminals, this DRAM offers ample connectivity options for interfacing with other components in a system.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile design save space on the PCB, making it suitable for compact devices and dense layouts.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of 85°C ensures reliable performance in challenging environmental conditions.

Organization: 16MX16

The 16MX16 organization provides plenty of memory capacity for data storage and retrieval, enabling efficient multitasking and processing capabilities.

Technical Specifications

DRAM MT48LC16M16A2P-7EAIT:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MT48LC16M16A2P-7EAIT:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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