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IS42VS16160J-75TLI

Integrated Silicon Solution

IS42VS16160J-75TLI by Integrated Silicon Solution

IS42VS16160J-75TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 1.8V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, small outline package, and industrial temperature grade suitable for memory-intensive applications in various industries.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 3,239 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 543 parts In-Stock

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Argo Parts USA

USA . 3,015 parts In-Stock

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Continental Prestige Electronics

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GreenTree Electronics

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Bastille Electronics

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Overview

Enhance your device's performance with the IS42VS16160J-75TLI by Integrated Silicon Solution. As a leading manufacturer in the DRAM category, ISS ensures top-notch quality and reliability. This versatile memory module is perfect for various applications, offering seamless operation in a compact package. With a nominal supply voltage of 1.8V and self-refresh capabilities, this product guarantees efficient performance and power savings. Upgrade your system today with the IS42VS16160J-75TLI and experience enhanced speed and responsiveness like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and long-lasting.

Surface Mount: YES

Surface mount technology allows for efficient and easy installation on circuit boards, saving space and simplifying assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent and reliable rate, improving performance and stability.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low voltage which can help reduce power consumption and heat generation.

Memory Density: 268435456 bit

High memory density allows for storing a large amount of data, ideal for applications requiring extensive memory capacity.

Maximum Access Time: 5.4 ns

Fast access time ensures quick retrieval of data, improving overall system responsiveness.

Technical Specifications

DRAM IS42VS16160J-75TLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10.16 mm

Trade Compliance

IS42VS16160J-75TLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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