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AS4C512M8D4-83BIN

Alliance Memory

AS4C512M8D4-83BIN by Alliance Memory

Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

Median Price

$9.831

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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RS (Exports)

UK . 232 parts In-Stock

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Nova Conductors

Japan . 23 parts In-Stock

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$9.150

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Vyrian

USA . 5,349 parts In-Stock

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Kruse Electronics AG

Switzerland . 4,068 parts In-Stock

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ARCO, INC.

USA . 3,800 parts In-Stock

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Kruse

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VNN

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$2.263

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$2.150

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Aztec Data Supply Inc.

USA . 251 parts In-Stock

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$3.640

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AZTECH Wire

Italy . 445 parts In-Stock

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$6.096

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Continental Prestige Electronics

USA . 4,605 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,297 parts In-Stock

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Argo Parts USA

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Microchip USA

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Overview

Upgrade your electronics with the AS4C512M8D4-83BIN by Alliance Memory, a top-tier manufacturer known for quality and reliability. This DDR4 DRAM offers superior performance in industrial applications, thanks to its synchronous operation and self-refresh capabilities. With a high clock frequency of 1200 MHz and a memory density of 4294967296 bit, this memory module delivers exceptional speed and efficiency. Trust Alliance Memory to provide cutting-edge technology that enhances your devices' functionality and overall performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the DRAM, making it reliable for long-term use.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a fixed pace, improving overall efficiency and performance of the DRAM.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a low supply voltage of 1.2V helps in reducing power consumption and heat generation, leading to energy efficiency.

Maximum Clock Frequency (fCLK): 1200 MHz

With a high clock frequency, this DRAM can process data at a faster rate, ideal for demanding applications and tasks.

Memory IC Type: DDR4 DRAM

Being DDR4, this DRAM offers enhanced performance and efficiency compared to previous generations, making it a suitable choice for modern computing needs.

Technical Specifications

DRAM AS4C512M8D4-83BIN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

1200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-PBGA-B78

Length:

10.6 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

78

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA78,9X13,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

8

Maximum Standby Current:

.04 Amp

Maximum Supply Current:

187 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

AS4C512M8D4-83BIN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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