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IS42S32400F-6BL-TR

Integrated Silicon Solution

IS42S32400F-6BL-TR by Integrated Silicon Solution

IS42S32400F-6BL-TR by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high memory density and fast data processing in a compact grid array package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,058 parts In-Stock

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Nova Conductors

Japan . 67 parts In-Stock

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Aztec Data Supply Inc.

USA . 120 parts In-Stock

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$2.810

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$2.810

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AZTECH Wire

Italy . 248 parts In-Stock

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$17.762

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Continental Prestige Electronics

USA . 4,517 parts In-Stock

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Argo Parts USA

USA . 3,420 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Upgrade your system's performance with the IS42S32400F-6BL-TR from Integrated Silicon Solution. This top-quality DRAM module offers unmatched reliability and speed, perfect for a wide range of applications. Whether you're a gamer looking for smoother gameplay or a professional seeking faster data processing, this product delivers exceptional value and benefits. Trust in the expertise of Integrated Silicon Solution and experience the advantages of cutting-edge technology with the IS42S32400F-6BL-TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on printed circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact and space-saving design for efficient PCB layout.

Input/Output Type: COMMON

The common input/output type simplifies the interface with other components, enhancing compatibility.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of systems and applications.

No. of Terminals: 90

The high number of terminals enables seamless connectivity and communication within the system.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array, fine pitch package style allows for high-density mounting and improved signal integrity.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can perform reliably under various environmental conditions.

Organization: 4MX32

The organization of 4MX32 provides a balance between capacity and speed, suitable for a range of memory-intensive applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for efficient data bus sharing and reduced power consumption.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliable performance even in low-temperature environments.

Terminal Position: BOTTOM

The bottom terminal position simplifies the installation process and enhances the overall functionality of the product.

Maximum Clock Frequency (fCLK): 166 MHz

Operating at a maximum clock frequency of 166 MHz, this product delivers fast and responsive memory access.

Temperature Grade: COMMERCIAL

Designed for commercial use, this product meets industry standards for performance and reliability.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high-speed operation, making it an energy-efficient choice.

Terminal Form: BALL

The ball terminal form enables secure and reliable connections, reducing the risk of signal interference.

Maximum Supply Current: 180 mA

Operating with a maximum supply current of 180 mA, this product maintains efficient power consumption levels.

No. of Words: 4194304 words

With a high number of words, this product offers ample storage capacity for data-intensive applications.

Sequential Burst Length: 1,2,4,8,FP

Supporting various sequential burst lengths, this product allows for flexible and efficient data transfer.

Memory Width: 32

The 32-bit memory width enhances data processing speed and system performance.

Terminal Pitch: 0.8 mm

The terminal pitch of 0.8 mm provides precise and secure connections, ensuring optimal signal transmission.

No. of Words Code: 4M

The 4M words code provides a convenient way to identify and configure the memory capacity of this product.

Memory Density: 134217728 bit

With a high memory density of 134217728 bits, this product offers ample storage space for data-intensive applications.

Memory IC Type: SYNCHRONOUS DRAM

Featuring synchronous DRAM technology, this product delivers fast and synchronized data access for enhanced performance.

Maximum Standby Current: 0.002 Amp

Operating with a maximum standby current of 0.002 Amp, this product conserves energy when not in use.

Refresh Cycles: 4096

With a refresh cycle of 4096, this product maintains data integrity and reliability over extended periods of use.

Interleaved Burst Length: 1,2,4,8

Supporting interleaved burst lengths of 1, 2, 4, and 8, this product offers versatile data transfer options.

Maximum Access Time: 5.4 ns

With a maximum access time of 5.4 ns, this product delivers quick and efficient memory access for responsive performance.

Technical Specifications

DRAM IS42S32400F-6BL-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

5.4 ns

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B90

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Terminals:

90

No. of Words:

4194304 words

No. of Words Code:

4M

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

180 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Trade Compliance

IS42S32400F-6BL-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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