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MT8HTF12864HDZ-667H1

Micron Technology

MT8HTF12864HDZ-667H1 by Micron Technology

MT8HTF12864HDZ-667H1 by Micron Technology is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. It operates at 1.8V, has 200 terminals, and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with a memory density of 8589934592 bits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 10,600 parts In-Stock

1+ parts

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10,600

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Vyrian

USA . 6,516 parts In-Stock

1+ parts

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6,516

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Digiode

USA . 561 parts In-Stock

1+ parts

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561

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

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300

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Connect4Technologies Inc.

Canada . 220 parts In-Stock

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220

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 500 parts In-Stock

1+ parts

$9.304

100+ parts

-

1k+ parts

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500

$9.304

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Ampacity Inc.

Singapore . 1,389 parts In-Stock

1+ parts

$12.000

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1,389

$12.000

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Continental Prestige Electronics

USA . 6,087 parts In-Stock

1+ parts

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6,087

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Argo Parts USA

USA . 2,532 parts In-Stock

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2,532

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Corphita

USA . 1,925 parts In-Stock

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1,925

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Bastille Electronics

Australia . 450 parts In-Stock

1+ parts

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450

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Speed Components Ltd (Excess)

Israel . 113 parts In-Stock

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113

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Overview

Elevate your device's performance with the MT8HTF12864HDZ-667H1 by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality DRAM modules that are perfect for a wide range of applications. With a focus on reliability and efficiency, this synchronous memory module offers customers exceptional value and benefits. Whether you're looking to upgrade your system or enhance its capabilities, the MT8HTF12864HDZ-667H1 provides the perfect solution. Experience seamless operation and improved performance with Micron Technology's innovative memory technology.

Feature Benefit Bullets

Package Shape:

RECTANGULAR - This shape is commonly used in electronic components, making it easy to integrate into existing systems.

Operating Mode:

SYNCHRONOUS - Synchronous operation allows for faster communication and data transfer within the system.

Self Refresh:

YES - Self refresh capability helps in conserving power and extending the lifespan of the product.

Input/Output Type:

COMMON - Common IO type ensures compatibility with a wide range of devices and systems.

Nominal Supply Voltage / Vsup (V):

1.8 - Low supply voltage helps in reducing power consumption and heat generation.

Power Supplies (V):

1.8 - Consistent power supply ensures stable performance and reliability.

No. of Terminals:

200 - Higher number of terminals enable efficient data transfer and connectivity.

Package Style (Meter):

MICROELECTRONIC ASSEMBLY - Compact package style saves space and allows for dense PCB layouts.

Maximum Operating Temperature:

70 °C - High operating temperature range ensures product can withstand harsh conditions.

Organization:

128MX64 - Efficient organization allows for optimal data storage and retrieval.

Output Characteristics:

3-STATE - 3-state output provides flexibility in controlling and managing data flow.

Minimum Operating Temperature:

0 °C - Wide temperature range ensures product can operate in various environments.

Terminal Finish:

GOLD - Gold terminal finish ensures reliable connections and reduces signal loss.

Terminal Position:

ZIG-ZAG - Zig-zag terminal position helps in preventing signal interference and crosstalk.

Maximum Seated Height:

30.15 mm - Low profile design enables easy mounting and integration in compact devices.

Maximum Clock Frequency (fCLK):

400 MHz - High clock frequency allows for quick data processing and execution.

Width:

3.8 mm - Narrow width enables easy placement and routing on PCBs.

Minimum Supply Voltage (Vsup):

1.7 V - Low minimum supply voltage ensures compatibility with various power sources.

Length:

67.6 mm - Optimal length for accommodating the required number of components and connections.

Temperature Grade:

COMMERCIAL - Commercial grade temperature tolerance makes it suitable for most applications.

Access Mode:

DUAL BANK PAGE BURST - Dual bank page burst access mode enhances data transfer speed and efficiency.

Technology:

CMOS - CMOS technology offers low power consumption and high noise immunity.

Terminal Form:

NO LEAD - Lead-free terminal form is environmentally friendly and RoHS compliant.

Maximum Supply Current:

1430 mA - High supply current ensures stable and uninterrupted operation.

No. of Words:

134217728 words - Large number of memory words allows for storing extensive data and programs.

Memory Width:

64 - 64-bit memory width facilitates fast data processing and retrieval.

Terminal Pitch:

0.45 mm - Small terminal pitch enables high-density packaging for space-constrained applications.

No. of Words Code:

128M - Efficient word coding for easy identification and management of data.

Maximum Supply Voltage (Vsup):

3.6 V - High maximum supply voltage tolerance ensures operation under varying power conditions.

Memory Density:

8589934592 bit - High memory density allows for storing large amounts of data in a compact space.

Memory IC Type:

DDR DRAM MODULE - DDR DRAM module offers high-speed data transfer and low latency.

Maximum Standby Current:

0.056 Amp - Low standby current consumption for energy-efficient operation when idle.

Refresh Cycles:

8192 - Adequate refresh cycles maintain data integrity and prevent loss of information.

Maximum Access Time:

0.4 ns - Fast access time results in quick data retrieval and processing for improved performance.

Technical Specifications

DRAM MT8HTF12864HDZ-667H1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Maximum Access Time:

.4 ns

Additional Features:

AUTO/SELF REFRESH; WD-MAX

Maximum Clock Frequency (fCLK):

400 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-XZMA-N200

JESD-609 Code:

e4

Length:

67.6 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

64

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128MX64

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

DIMM200,24

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Standby Current:

.056 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

1430 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.45 mm

Terminal Position:

ZIG-ZAG

Width:

3.8 mm

Trade Compliance

MT8HTF12864HDZ-667H1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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