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IS43TR16128DL-107MBL

Integrated Silicon Solution

IS43TR16128DL-107MBL by Integrated Silicon Solution

IS43TR16128DL-107MBL by Integrated Silicon Solution is a DDR3L DRAM with 128MX16 organization, operating at 934.58 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.

Median Price

$7.600

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 9 parts In-Stock

1+ parts

$5.290

100+ parts

$4.701

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$4.197

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9

$5.290

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$4.197

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Newark

USA . 190 parts In-Stock

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$7.510

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$7.510

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Farnell

UK . 148 parts In-Stock

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$7.690

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$7.690

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Element14

Singapore . 148 parts In-Stock

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$10.470

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148

$10.470

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Nova Conductors

Japan . 100 parts In-Stock

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$5.120

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Vyrian

USA . 5,979 parts In-Stock

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NAC Semi

USA . 950 parts In-Stock

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$5.700

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$5.700

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 198 parts In-Stock

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$2.967

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198

$2.967

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Continental Prestige Electronics

USA . 190 parts In-Stock

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$4.470

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$3.660

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190

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$3.660

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Corohmni

South Africa . 49 parts In-Stock

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$5.106

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49

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Netroflash

USA . 100 parts In-Stock

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$5.120

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$5.222

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$5.222

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$5.222

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$5.222

$5.222

$5.222

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AZTECH Wire

Italy . 248 parts In-Stock

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$14.889

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Eastek

USA . 1,140 parts In-Stock

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GreenTree Electronics

Israel . 1,140 parts In-Stock

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Authorized Procurement Solutions

USA . 1,140 parts In-Stock

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Argo Parts USA

USA . 292 parts In-Stock

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Lixinc

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Overview

Upgrade your electronic devices with the high-quality IS43TR16128DL-107MBL DDR3L DRAM by Integrated Silicon Solution. Designed for maximum performance and reliability, this memory module boasts a thin profile grid array package shape and synchronous operating mode. Perfect for a wide range of applications, this DRAM offers customers seamless multitasking capabilities and rapid data processing. Trust in Integrated Silicon Solution's unparalleled expertise in memory solutions and unlock the full potential of your devices with the IS43TR16128DL-107MBL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Clock Frequency (fCLK): 934.58 MHz

High clock frequency enables fast data processing and improved performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Memory IC Type: DDR3L DRAM

DDR3L DRAM ensures high-speed data transfer and efficient memory management.

Technical Specifications

DRAM IS43TR16128DL-107MBL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

934.58 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.016 Amp

Minimum Standby Voltage:

1.283 V

Maximum Supply Current:

216 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

9 mm

Trade Compliance

IS43TR16128DL-107MBL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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