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IS43TR16256BL-107MBLI-TR

Integrated Silicon Solution

IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution

IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

Median Price

$8.082

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1,500 parts In-Stock

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$7.174

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$7.174

Verical

USA . 1,500 parts In-Stock

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$8.082

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$8.082

Rochester

USA . 900 parts In-Stock

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$8.270

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$7.400

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$6.960

900

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$8.270

$7.400

$6.960

Distributors (In-Stock)

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Chip Stock

USA . 28,360 parts In-Stock

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Vyrian

USA . 4,411 parts In-Stock

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NAC Semi

USA . 1,500 parts In-Stock

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$12.570

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Nova Conductors

Japan . 53 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,573 parts In-Stock

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$3.880

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$3.880

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Corohmni

South Africa . 1,003 parts In-Stock

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$5.348

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AZTECH Wire

Italy . 852 parts In-Stock

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$17.460

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Advanced Electronics

New Zealand . 4,494 parts In-Stock

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Argo Parts USA

USA . 2,223 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 1,500 parts In-Stock

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Continental Prestige Electronics

USA . 792 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Enhance your electronic devices with the high-quality IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-notch DRAM products suitable for various applications. This DDR3L DRAM offers unparalleled value and benefits with its advanced technology, common input/output type, and self-refresh feature. Elevate your devices' performance with this reliable memory solution that guarantees efficient operation and seamless multitasking capabilities. Experience the difference with ISS's cutting-edge memory technology!

Feature Benefit Bullets

Mounting Type: BOARD

Board mounting type allows for easy and secure installation on a circuit board, providing stability and compatibility with various board configurations.

Safety Approval: UL

UL safety approval ensures that the product has undergone rigorous testing for safety and reliability, giving peace of mind to users.

Wire Gauge: 13 AWG

Supports 13 AWG wire gauge, allowing for a wide range of wire sizes to be used with the terminal block for versatile applications.

Voltage (Rated): 250 V

Rated for 250 volts, making it suitable for various electrical applications where higher voltage levels are required.

Terminal & Terminal Block Type: STRIP TERMINAL BLOCK

Strip terminal block type provides easy connection and disconnection of wires, making maintenance and troubleshooting tasks hassle-free.

Wire Cross Section: 2.5 mm2

Supports wire cross sections up to 2.5 mm2, allowing for efficient power transmission and reducing the risk of overheating.

Fastening Method: CONNECTOR

Connector fastening method ensures secure connections between wires and terminals, preventing loosening or disconnection during operation.

Current (Rated): 12 A

Rated for 12 amps, making it suitable for moderate current applications while ensuring safe and reliable operation.

No. of Ways: 5

With 5 ways available, the terminal block offers flexibility to accommodate multiple connections or circuits within a single component, optimizing space and organization.

Technical Specifications

DRAM IS43TR16256BL-107MBLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

934.5 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.028 Amp

Maximum Supply Current:

254 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

9 mm

Trade Compliance

IS43TR16256BL-107MBLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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