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IS43QR16256B-083RBL

Integrated Silicon Solution

IS43QR16256B-083RBL by Integrated Silicon Solution

IS43QR16256B-083RBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1200.48 MHz clock frequency, 95°C operating temp, and 1.2mm seated height. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.

Median Price

$8.684

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,051 parts In-Stock

1+ parts

$8.507

100+ parts

$7.563

1k+ parts

$6.849

10k+ parts

$6.750

1,051

$8.507

$7.563

$6.849

$6.750

Verical

USA . 1,051 parts In-Stock

1+ parts

$8.507

100+ parts

$7.563

1k+ parts

$6.849

10k+ parts

$6.750

1,051

$8.507

$7.563

$6.849

$6.750

Chip1Stop

Japan . 249 parts In-Stock

1+ parts

$8.860

100+ parts

$7.961

1k+ parts

$7.320

10k+ parts

-

249

$8.860

$7.961

$7.320

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Mouser Electronics

USA . 449 parts In-Stock

1+ parts

$21.080

100+ parts

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449

$21.080

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Distributors (In-Stock)

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Nova Conductors

Japan . 54 parts In-Stock

1+ parts

$10.430

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54

$10.430

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Vyrian

USA . 2,892 parts In-Stock

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2,892

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Component Sense

UK . 273 parts In-Stock

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273

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Bristol Electronics

USA . 197 parts In-Stock

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EZ Electronic Parts

Israel . 20 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$10.221

100+ parts

-

1k+ parts

$9.813

10k+ parts

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1,000

$10.221

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$9.813

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Continental Prestige Electronics

USA . 2,037 parts In-Stock

1+ parts

$10.430

100+ parts

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1k+ parts

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10k+ parts

$10.221

2,037

$10.430

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$10.221

Argo Parts USA

USA . 5,104 parts In-Stock

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Authorized Procurement Solutions

USA . 202 parts In-Stock

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202

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GreenTree Electronics

Israel . 50 parts In-Stock

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Eastek

USA . 4 parts In-Stock

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$10.400

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$10.400

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Overview

Experience seamless and high-performance computing with the IS43QR16256B-083RBL by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS ensures top-notch quality and reliability in every product. This DDR4 DRAM offers lightning-fast speed, efficient power consumption, and versatile applications. Elevate your system's capabilities with this cutting-edge memory solution, delivering unparalleled value and performance to meet all your computing needs. Upgrade now and experience the difference with ISS.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the DRAM module.

Surface Mount: YES

Surface mount capability makes it easy to integrate this DRAM into various electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and efficient data transfer.

Nominal Supply Voltage / Vsup (V): 1.2

Operates at a standard voltage level, ensuring compatibility with most systems.

Maximum Operating Temperature: 95 °C

Can withstand high operating temperatures, making it suitable for demanding applications.

Organization: 256MX16

Organized as 256 megabytes by 16 bits, providing a balance of capacity and data width.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Memory IC Type: DDR4 DRAM

DDR4 technology delivers faster data transfer speeds and improved power efficiency compared to previous generations.

Technical Specifications

DRAM IS43QR16256B-083RBL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

1200.48 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-PBGA-B96

Length:

13.5 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

8

Maximum Standby Current:

.058 Amp

Minimum Standby Voltage:

1.14 V

Maximum Supply Current:

375 mA

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

7.5 mm

Trade Compliance

IS43QR16256B-083RBL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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