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IS43TR16256AL-125KBL

Integrated Silicon Solution

IS43TR16256AL-125KBL by Integrated Silicon Solution

IS43TR16256AL-125KBL by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast access times in a compact grid array package.

Median Price

$9.910

Lifecycle Status

Suppliers In-Stock

11

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Nova Conductors

Japan . 100 parts In-Stock

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Flip Electronics

USA . 10,000 parts In-Stock

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Chip Stock

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Vyrian

USA . 7,604 parts In-Stock

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Classic Components Corporation

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ComSIT Distribution GmbH

Germany . 40 parts In-Stock

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Bristol Electronics

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Cyclops Electronics Ltd

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Atlantic Semiconductor

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Elcom Components

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Component Electronics Inc.

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$2.122

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Aztec Data Supply Inc.

USA . 1,707 parts In-Stock

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Corohmni

South Africa . 231 parts In-Stock

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$4.958

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Continental Prestige Electronics

USA . 676 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$9.414

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$9.216

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AZTECH Wire

Italy . 770 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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RC Electronics

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Argo Parts USA

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S.R.D Solutions

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Metaverse IC Inc.

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Computer Components Inc. - USA

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Authorized Procurement Solutions

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GreenTree Electronics

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Overview

Discover the IS43TR16256AL-125KBL by Integrated Silicon Solution, a top-quality DDR3L DRAM memory module designed to elevate your devices' performance. With a compact design and advanced CMOS technology, this memory module offers seamless operation in a variety of applications. Whether you're a gamer, designer, or simply looking to boost your device's speed, this memory module provides the reliability and speed you need. Trust in Integrated Silicon Solution's expertise to enhance your user experience with the IS43TR16256AL-125KBL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures a lightweight and durable construction, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards, saving time and effort during manufacturing.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing coordination between the memory and controller, leading to optimal performance and reliability.

Nominal Supply Voltage / Vsup (V): 1.35

The low nominal supply voltage of 1.35V contributes to energy efficiency, reducing power consumption and heat generation.

No. of Terminals: 96

Having 96 terminals provides a high level of connectivity and flexibility for interfacing with other components in a system.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this DRAM can withstand elevated temperatures, ensuring stable performance even in demanding environments.

Memory IC Type: DDR3L DRAM

Being DDR3L DRAM indicates that this product offers high data transfer rates and low power consumption, making it ideal for modern computing applications.

Technical Specifications

DRAM IS43TR16256AL-125KBL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.1 ns

Additional Features:

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

9 mm

Trade Compliance

IS43TR16256AL-125KBL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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