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MT48LC4M32B2P-6:GTR

Micron Technology

MT48LC4M32B2P-6:GTR by Micron Technology

Micron Technology's MT48LC4M32B2P-6:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, offering 134217728-bit memory density and 5.5ns max access time. Ideal for commercial applications requiring fast and efficient memory operations in a compact small outline package.

Median Price

$3.620

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 734 parts In-Stock

1+ parts

$3.620

100+ parts

$3.620

1k+ parts

$3.620

10k+ parts

$3.620

734

$3.620

$3.620

$3.620

$3.620

Verical

USA . 734 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.620

10k+ parts

$3.620

734

-

-

$3.620

$3.620

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 602 parts In-Stock

1+ parts

$3.439

100+ parts

-

1k+ parts

-

10k+ parts

-

602

$3.439

-

-

-

Chip Stock

USA . 14,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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14,100

-

-

-

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Vyrian

USA . 2,596 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,596

-

-

-

-

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

-

100+ parts

-

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450

-

-

-

-

Speed Components Ltd

Israel . 75 parts In-Stock

1+ parts

-

100+ parts

-

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75

-

-

-

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Bristol Electronics

USA . 9 parts In-Stock

1+ parts

-

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-

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9

-

-

-

-

NexGen Digital

USA . 1 parts In-Stock

1+ parts

-

100+ parts

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1

-

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EMSNET

USA . 1 parts In-Stock

1+ parts

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1

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 730 parts In-Stock

1+ parts

$3.080

100+ parts

$3.003

1k+ parts

$2.988

10k+ parts

-

730

$3.080

$3.003

$2.988

-

Ampacity Inc.

Singapore . 632 parts In-Stock

1+ parts

$3.080

100+ parts

-

1k+ parts

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632

$3.080

-

-

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Corohmni

South Africa . 935 parts In-Stock

1+ parts

$3.083

100+ parts

-

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10k+ parts

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935

$3.083

-

-

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Corphita

USA . 878 parts In-Stock

1+ parts

$3.258

100+ parts

-

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10k+ parts

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878

$3.258

-

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Aztec Data Supply Inc.

USA . 2,138 parts In-Stock

1+ parts

$4.850

100+ parts

-

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2,138

$4.850

-

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AZTECH Wire

Italy . 462 parts In-Stock

1+ parts

$20.880

100+ parts

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462

$20.880

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Argo Parts USA

USA . 1,981 parts In-Stock

1+ parts

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1,981

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Benley Electronics

USA . 399 parts In-Stock

1+ parts

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399

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Continental Prestige Electronics

USA . 316 parts In-Stock

1+ parts

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316

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Microchip USA

USA . 162 parts In-Stock

1+ parts

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162

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Bastille Electronics

Australia . 120 parts In-Stock

1+ parts

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100+ parts

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120

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Overview

Experience unrivaled performance and reliability with the MT48LC4M32B2P-6:GTR by Micron Technology. As a leading manufacturer in the industry, Micron Technology's DRAM products are known for their superior quality and cutting-edge technology. Ideal for a wide range of applications, this synchronous DRAM offers seamless operation and efficient self-refresh capabilities. With a compact design and a nominal supply voltage of 3.3V, this product delivers exceptional value and performance to meet your memory needs. Trust Micron Technology to provide you with the best-in-class memory solutions that enhance your productivity and streamline your operations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight packaging material, ideal for electronic components.

Surface Mount: YES

Allows for easy and compact installation on PCBs, saving space and simplifying assembly processes.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfers and improved performance in data-intensive applications.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage for efficient and stable operation of the DRAM product.

No. of Words: 4194304 words

High memory capacity allows for storing a large amount of data, ideal for demanding applications.

Memory Width: 32

Provides a wide memory interface for faster data transfer speeds and improved system performance.

Technology: CMOS

Utilizes CMOS technology for low power consumption, reducing energy usage and heat generation.

Memory IC Type: SYNCHRONOUS DRAM

Synchronous DRAM offers faster data access times and improved performance compared to traditional DRAM.

Technical Specifications

DRAM MT48LC4M32B2P-6:GTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MT48LC4M32B2P-6:GTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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