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MT48LC4M32B2B5-6AIT:L

Micron Technology

MT48LC4M32B2B5-6AIT:L by Micron Technology

Micron Technology's MT48LC4M32B2B5-6AIT:L is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz clock frequency. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in industrial environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,730 parts In-Stock

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5,730

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Chip Stock

USA . 5,500 parts In-Stock

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5,500

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Digiode

USA . 657 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Bristol Electronics

USA . 9 parts In-Stock

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Component Sense

UK . 5 parts In-Stock

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Cyclops Electronics Ltd

UK . 1 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,421 parts In-Stock

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$14.000

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$14.000

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AZTECH Wire

Italy . 514 parts In-Stock

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$16.692

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514

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S.R.D Solutions

India . 15,000 parts In-Stock

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Argo Parts USA

USA . 4,464 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Continental Prestige Electronics

USA . 1,649 parts In-Stock

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Corphita

USA . 1,067 parts In-Stock

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Bastille Electronics

Australia . 870 parts In-Stock

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Perfect Parts

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Microchip USA

USA . 186 parts In-Stock

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Computer Components Inc. - USA

USA . 158 parts In-Stock

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Overview

Experience the next level of performance and reliability with Micron Technology's MT48LC4M32B2B5-6AIT:L. As a leading manufacturer in the DRAM category, Micron Technology delivers top-notch quality and cutting-edge technology in every product. Ideal for industrial applications, this synchronous DRAM offers a seamless operating experience, low power consumption, and a wide range of features to meet all your memory needs. Trust in Micron Technology to provide you with the best value, benefits, and advantages that only a world-class manufacturer can offer. Elevate your business with Micron Technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Being made of plastic/epoxy makes the package lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on the PCB.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination, improving overall system performance.

Nominal Supply Voltage / Vsup: 3.3V

Operating at a standard 3.3V supply voltage ensures compatibility with a wide range of systems and reduced power consumption.

Maximum Operating Temperature: 85°C

With a high maximum operating temperature, this DRAM can withstand harsh environmental conditions and maintain reliable performance.

Memory Density: 134217728 bit

High memory density allows for storing a large amount of data, making it suitable for applications requiring extensive memory capacity.

Technical Specifications

DRAM MT48LC4M32B2B5-6AIT:L attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B90

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.0025 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

MT48LC4M32B2B5-6AIT:L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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