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EDB4432BBBJ-1DAAT-F-R

Micron Technology

EDB4432BBBJ-1DAAT-F-R by Micron Technology

Micron Technology's EDB4432BBBJ-1DAAT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Ideal for applications requiring high memory density and low power consumption in compact devices.

Median Price

$12.260

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$12.260

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$12.260

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-

-

Chip Stock

USA . 16,600 parts In-Stock

1+ parts

-

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-

1k+ parts

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10k+ parts

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16,600

-

-

-

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Digiode

USA . 2,096 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,096

-

-

-

-

Vyrian

USA . 1,547 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,547

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-

-

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Velocity Electronics

USA . 235 parts In-Stock

1+ parts

-

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1k+ parts

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235

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,064 parts In-Stock

1+ parts

$5.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,064

$5.000

-

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

$12.015

100+ parts

-

1k+ parts

$11.534

10k+ parts

-

500

$12.015

-

$11.534

-

Continental Prestige Electronics

USA . 5,594 parts In-Stock

1+ parts

$12.260

100+ parts

-

1k+ parts

-

10k+ parts

$12.015

5,594

$12.260

-

-

$12.015

AZTECH Wire

Italy . 556 parts In-Stock

1+ parts

$19.858

100+ parts

-

1k+ parts

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10k+ parts

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556

$19.858

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RC Electronics

USA . 1,855 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,855

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Corphita

USA . 1,616 parts In-Stock

1+ parts

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100+ parts

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1,616

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Argo Parts USA

USA . 1,535 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,535

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-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,000

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-

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-

Overview

Unlock the power of cutting-edge technology with Micron Technology's EDB4432BBBJ-1DAAT-F-R LPDDR2 DRAM. Designed with precision and quality in mind, this memory module offers unparalleled performance for a wide range of applications. Whether you're enhancing the speed of your smartphone or boosting the capabilities of your IoT device, this DRAM ensures seamless operation and optimal efficiency. Experience the value and benefits of Micron's expertise in memory solutions with the EDB4432BBBJ-1DAAT-F-R.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the DRAM, ensuring reliability and longevity.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Allows for precise coordination of data transfer, enhancing system performance and efficiency.

Nominal Supply Voltage / Vsup (V): 1.2

Optimal voltage for efficient operation and power consumption, maximizing overall performance.

No. of Terminals: 134

Provides ample connectivity options and flexibility for integration with various systems and applications.

Organization: 128MX32

Offers a high level of data organization and storage capacity, meeting the demands of modern computing tasks.

Memory Density: 4294967296 bit

High memory density allows for storing large amounts of data, enabling faster access and processing.

Memory IC Type: LPDDR2 DRAM

Utilizes LPDDR2 technology for efficient and reliable performance in mobile and low-power applications.

Technical Specifications

DRAM EDB4432BBBJ-1DAAT-F-R attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

JESD-30 Code:

R-PBGA-B134

JESD-609 Code:

e1

Length:

11.5 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

134

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Organization:

128MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.75 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Trade Compliance

EDB4432BBBJ-1DAAT-F-R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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