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EDB4432BBBJ-1D-F-R

Micron Technology

EDB4432BBBJ-1D-F-R by Micron Technology

Micron Technology's EDB4432BBBJ-1D-F-R is a 128MX32 LPDDR2 DRAM with 134 terminals in a grid array package. Operating at 1.2V, it offers synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications. The very thin profile and fine pitch make it suitable for compact electronic devices requiring fast and efficient data processing.

Median Price

$7.500

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$7.500

100+ parts

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100

$7.500

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Chip Stock

USA . 17,100 parts In-Stock

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17,100

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Vyrian

USA . 3,232 parts In-Stock

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3,232

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Digiode

USA . 1,580 parts In-Stock

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1,580

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,278 parts In-Stock

1+ parts

$7.500

100+ parts

-

1k+ parts

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10k+ parts

$7.350

3,278

$7.500

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-

$7.350

Netroflash

USA . 50 parts In-Stock

1+ parts

$7.500

100+ parts

-

1k+ parts

$7.125

10k+ parts

$6.975

50

$7.500

-

$7.125

$6.975

Ampacity Inc.

Singapore . 1,598 parts In-Stock

1+ parts

$15.000

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1,598

$15.000

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AZTECH Wire

Italy . 734 parts In-Stock

1+ parts

$18.040

100+ parts

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734

$18.040

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Authorized Procurement Solutions

USA . 6,800 parts In-Stock

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6,800

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Argo Parts USA

USA . 3,738 parts In-Stock

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3,738

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Corphita

USA . 2,246 parts In-Stock

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2,246

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A-Z Elektronik GmbH

Germany . 787 parts In-Stock

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787

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Microchip USA

USA . 372 parts In-Stock

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372

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Kepictronics

USA . 301 parts In-Stock

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301

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Overview

Discover the cutting-edge EDB4432BBBJ-1D-F-R by Micron Technology, a top-tier manufacturer in the DRAM category. This high-quality memory module offers seamless performance and reliability for a wide range of applications. With its advanced technology and innovative design, customers can expect superior efficiency and speed without compromising on durability. Elevate your systems with this product and experience the unmatched value and benefits it brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, perfect for mobile devices or other applications where weight and durability are important considerations.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a consistent and predictable rate, leading to improved overall performance and reliability of the product.

Nominal Supply Voltage / Vsup (V): 1.2

The 1.2V nominal supply voltage provides a balance between power efficiency and performance, making it suitable for a wide range of applications.

Organization: 128MX32

The 128MX32 organization allows for high memory density and efficient data storage and retrieval, ideal for applications requiring large amounts of memory.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making the product energy-efficient and capable of handling demanding tasks effectively.

Memory IC Type: LPDDR2 DRAM

LPDDR2 DRAM is known for its high performance, low power consumption, and reliability, making it a popular choice for mobile devices and other applications where efficiency is crucial.

Technical Specifications

DRAM EDB4432BBBJ-1D-F-R attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

JESD-30 Code:

R-PBGA-B134

JESD-609 Code:

e1

Length:

11.5 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

134

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Organization:

128MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.75 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.3 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Width:

10 mm

Trade Compliance

EDB4432BBBJ-1D-F-R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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