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MT48LC4M32B2P-7:GTR

Micron Technology

MT48LC4M32B2P-7:GTR by Micron Technology

Micron Technology's MT48LC4M32B2P-7:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70 °C. It features Self Refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for commercial applications requiring high memory density and synchronous operation.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Vyrian

USA . 7,202 parts In-Stock

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Digiode

USA . 1,896 parts In-Stock

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Sternenhof Electronics

Switzerland . 606 parts In-Stock

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ComSIT Distribution GmbH

Germany . 108 parts In-Stock

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ComSIT USA

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J2 Sourcing AB

Sweden . 91 parts In-Stock

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Martec Srl

Italy . 47 parts In-Stock

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EMSNET

USA . 47 parts In-Stock

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Nova Conductors

Japan . 40 parts In-Stock

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Corohmni

South Africa . 929 parts In-Stock

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$2.847

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Andel Nordic

Denmark . 2,698 parts In-Stock

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$3.627

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$3.482

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$3.482

Aztec Data Supply Inc.

USA . 56 parts In-Stock

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$4.672

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AZTECH Wire

Italy . 373 parts In-Stock

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Ampacity Inc.

Singapore . 477 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,872 parts In-Stock

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Continental Prestige Electronics

USA . 6,502 parts In-Stock

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Microchip USA

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Authorized Procurement Solutions

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Argo Parts USA

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Corphita

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Aranea Global

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Overview

Upgrade your devices with the high-quality MT48LC4M32B2P-7:GTR DRAM by Micron Technology. With a reputation for excellence in memory technology, Micron delivers superior performance and reliability. Ideal for a wide range of applications, this synchronous DRAM offers seamless operation and self-refresh capabilities. Experience the value of faster data processing, improved multitasking, and enhanced overall efficiency. Trust Micron to elevate your technology experience with cutting-edge solutions like the MT48LC4M32B2P-7:GTR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ensuring that the product is easy to handle and long-lasting.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination with the system, ensuring optimal performance and reliability.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures efficient power consumption and compatibility with a wide range of systems.

No. of Terminals: 86

Having 86 terminals provides flexibility in connecting the DRAM to various devices and systems, making it versatile in usage.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM can perform reliably even in challenging environmental conditions.

Technology: CMOS

Being a CMOS technology-based DRAM ensures low power consumption, high speed, and compatibility with modern electronics.

Memory IC Type: SYNCHRONOUS DRAM

As a Synchronous DRAM, this product offers fast access times, high data transfer rates, and efficient performance for demanding applications.

Technical Specifications

DRAM MT48LC4M32B2P-7:GTR attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.5 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MT48LC4M32B2P-7:GTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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