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AS4C512M16D3LC-12BCNTR

Alliance Memory

AS4C512M16D3LC-12BCNTR by Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BCNTR is a DDR3L DRAM with 512MX16 organization, operating at up to 800 MHz. Featuring common I/O type and self-refresh mode, it offers 8192 refresh cycles and supports multi-bank page burst access. Ideal for applications requiring high-speed synchronous memory with low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Kruse

Germany . 40,000 parts In-Stock

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Kruse Electronics AG

Switzerland . 20,000 parts In-Stock

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ARCO, INC.

USA . 8,000 parts In-Stock

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Vyrian

USA . 4,206 parts In-Stock

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VNN

France . 2,631 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Aztec Data Supply Inc.

USA . 194 parts In-Stock

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$2.990

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AZTECH Wire

Italy . 535 parts In-Stock

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$13.116

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Continental Prestige Electronics

USA . 4,647 parts In-Stock

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Argo Parts USA

USA . 1,955 parts In-Stock

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Bastille Electronics

Australia . 750 parts In-Stock

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Overview

Experience unmatched performance and reliability with the AS4C512M16D3LC-12BCNTR from Alliance Memory. As a leading manufacturer in the industry, Alliance Memory's DDR3L DRAM offers exceptional quality and value, making it the perfect choice for a wide range of applications. From consumer electronics to industrial systems, this synchronous memory module provides seamless operation and efficient data processing. Upgrade your devices with Alliance Memory and enjoy the benefits of cutting-edge technology at an affordable price.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various electronic applications.

Surface Mount: YES

With surface mount capability, this product can be easily integrated into circuit boards, saving space and simplifying the manufacturing process.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and organization of multiple components on a PCB, optimizing space utilization.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise data transmission and synchronization, making this product reliable for high-performance computing tasks.

Self Refresh: YES

The self-refresh feature reduces power consumption and extends battery life in devices that utilize this DRAM, enhancing overall energy efficiency.

Input/Output Type: COMMON

The common input/output type simplifies connectivity with other components, facilitating seamless data transfer within the system.

Nominal Supply Voltage / Vsup (V): 1.35

The nominal supply voltage of 1.35V ensures stable and efficient performance, suitable for a wide range of electronic devices.

No. of Terminals: 96

With 96 terminals, this product offers ample connectivity options for interfacing with various components, enhancing flexibility in system design.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array, thin profile, and fine pitch package style provides a compact and high-density solution for space-constrained applications.

Maximum Operating Temperature: 95 °C

The high maximum operating temperature of 95°C allows this DRAM to withstand demanding environmental conditions, ensuring reliable performance in extreme situations.

Organization: 512MX16

The 512MX16 organization allows for efficient data storage and retrieval, making this product suitable for applications that require large amounts of memory capacity.

Output Characteristics: 3-STATE

The 3-state output characteristics enable multiple devices to share the same output line without interference, enhancing system scalability and flexibility.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliable operation even in cold environments, expanding the range of potential applications for this product.

Technical Specifications

DRAM AS4C512M16D3LC-12BCNTR attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

Length:

13 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.016 Amp

Maximum Supply Current:

350 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

AS4C512M16D3LC-12BCNTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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