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AS4C16M16SA-6TCN

Alliance Memory

AS4C16M16SA-6TCN by Alliance Memory

AS4C16M16SA-6TCN by Alliance Memory is a 16MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 16777216 words memory density and supports four bank page burst access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.

Median Price

$4.760

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 50 parts In-Stock

1+ parts

$3.220

100+ parts

$2.720

1k+ parts

$2.600

10k+ parts

-

50

$3.220

$2.720

$2.600

-

DigiKey

USA . 1,523 parts In-Stock

1+ parts

$4.760

100+ parts

$4.203

1k+ parts

$3.864

10k+ parts

$3.767

1,523

$4.760

$4.203

$3.864

$3.767

Mouser Electronics

USA . 499 parts In-Stock

1+ parts

$4.760

100+ parts

$4.210

1k+ parts

$3.860

10k+ parts

$3.760

499

$4.760

$4.210

$3.860

$3.760

Element14

Singapore . 96 parts In-Stock

1+ parts

$5.490

100+ parts

$4.360

1k+ parts

$4.160

10k+ parts

-

96

$5.490

$4.360

$4.160

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Newark

USA . 116 parts In-Stock

1+ parts

$6.500

100+ parts

$4.000

1k+ parts

$3.250

10k+ parts

-

116

$6.500

$4.000

$3.250

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Future Electronics

Canada . 794 parts In-Stock

1+ parts

-

100+ parts

$4.960

1k+ parts

$4.850

10k+ parts

-

794

-

$4.960

$4.850

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RS (Exports)

UK . 86 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.278

10k+ parts

$2.826

86

-

-

$3.278

$2.826

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$3.072

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$3.072

-

-

-

TME

Poland . 295 parts In-Stock

1+ parts

$4.310

100+ parts

-

1k+ parts

$3.780

10k+ parts

-

295

$4.310

-

$3.780

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Kruse

Germany . 158,683 parts In-Stock

1+ parts

-

100+ parts

-

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158,683

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Kruse Electronics AG

Switzerland . 75,809 parts In-Stock

1+ parts

-

100+ parts

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75,809

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ARCO, INC.

USA . 75,200 parts In-Stock

1+ parts

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75,200

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VNN

France . 5,255 parts In-Stock

1+ parts

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5,255

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NAC Semi

USA . 648 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$7.980

10k+ parts

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648

-

-

$7.980

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Rutronik

Germany . 540 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.780

10k+ parts

-

540

-

-

$2.780

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Vyrian

USA . 357 parts In-Stock

1+ parts

-

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357

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ComSIT Distribution GmbH

Germany . 80 parts In-Stock

1+ parts

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80

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Cyclops Electronics Ltd

UK . 20 parts In-Stock

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,548 parts In-Stock

1+ parts

$2.080

100+ parts

-

1k+ parts

-

10k+ parts

-

4,548

$2.080

-

-

-

Argo Parts USA

USA . 3,634 parts In-Stock

1+ parts

$3.072

100+ parts

-

1k+ parts

-

10k+ parts

-

3,634

$3.072

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-

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Continental Prestige Electronics

USA . 1,109 parts In-Stock

1+ parts

$3.072

100+ parts

-

1k+ parts

-

10k+ parts

$3.011

1,109

$3.072

-

-

$3.011

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$3.072

100+ parts

-

1k+ parts

-

10k+ parts

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1,000

$3.072

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QUARKTWIN TECHNOLOGY LTD

USA . 21,751 parts In-Stock

1+ parts

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21,751

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Authorized Procurement Solutions

USA . 6,048 parts In-Stock

1+ parts

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6,048

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Eastek

USA . 972 parts In-Stock

1+ parts

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100+ parts

$3.680

1k+ parts

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972

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$3.680

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iodParts Technologies Inc.

India . 540 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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540

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GreenTree Electronics

Israel . 108 parts In-Stock

1+ parts

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108

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Allen Electronics Distributors

USA . 88 parts In-Stock

1+ parts

-

100+ parts

$2.698

1k+ parts

$2.331

10k+ parts

-

88

-

$2.698

$2.331

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Overview

Experience the ultimate in memory performance with the AS4C16M16SA-6TCN by Alliance Memory. As a leading manufacturer in the industry, Alliance Memory delivers high-quality DRAM products that are perfect for a wide range of applications. With a focus on reliability and innovation, this synchronous DRAM offers customers unbeatable value, benefits, and advantages. Trust Alliance Memory to provide you with top-notch memory solutions that exceed your expectations. Elevate your projects with the AS4C16M16SA-6TCN and experience the difference today.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the DRAM.

Surface Mount:

YES - Allows for easy and efficient installation on circuit boards.

Package Shape:

RECTANGULAR - Provides a compact and space-saving design for efficient PCB layout.

Operating Mode:

SYNCHRONOUS - Ensures synchronized data transfer for high-speed performance.

Self Refresh:

YES - Allows for power-saving operation when the DRAM is not in use.

Input/Output Type:

COMMON - Simplifies the interface design and makes integration easier.

Nominal Supply Voltage / Vsup:

3.3V - Compatible with standard power supply voltages for widespread use.

No. of Terminals:

54 - Provides multiple connection points for reliable data transfer.

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE - Offers a compact form factor for space-constrained applications.

Maximum Operating Temperature:

70 °C - Ensures stable performance even in high-temperature environments.

Organization:

16MX16 - Provides a large memory capacity for storing data efficiently.

Minimum Operating Temperature:

0 °C - Can operate in a wide range of temperature conditions.

Terminal Finish:

TIN - Provides corrosion resistance for long-lasting reliability.

Terminal Position:

DUAL - Offers multiple connection points for secure attachment to PCBs.

Maximum Seated Height:

1.2 mm - Allows for low-profile installation in compact electronic devices.

Maximum Clock Frequency (fCLK):

166 MHz - Supports high-speed data processing for quick response times.

Width:

10.16 mm - Compact size for easy integration on PCBs.

Minimum Supply Voltage (Vsup):

3V - Suitable for a wide range of power supply voltages.

Maximum Time At Peak Reflow Temperature (s):

40 - Ensures reliable soldering during assembly.

Peak Reflow Temperature °C:

260 - Withstands high-temperature soldering processes.

Length:

22.22 mm - Provides a compact footprint for efficient PCB layout.

Temperature Grade:

COMMERCIAL - Suitable for standard commercial applications.

Access Mode:

FOUR BANK PAGE BURST - Supports efficient data access for improved performance.

Technology:

CMOS - Offers low power consumption and high speed for energy-efficient operation.

Terminal Form:

GULL WING - Provides secure attachment to PCBs for reliable data transfer.

Maximum Supply Current:

60 mA - Ensures stable power supply for consistent performance.

No. of Words:

16777216 words - Offers a large memory capacity for storing data.

Sequential Burst Length:

1,2,4,8,FP - Supports flexible data access for various applications.

Memory Width:

16 - Provides a wide data bus for efficient data transfer.

Terminal Pitch:

0.8 mm - Allows for precise and secure connection to PCBs.

No. of Words Code:

16M - Indicates the memory capacity of the DRAM.

Moisture Sensitivity Level (MSL):

3 - Suitable for standard moisture exposure levels.

Maximum Supply Voltage (Vsup):

3.6 V - Compatible with a range of power supply voltages.

Memory Density:

268435456 bit - Offers a high memory capacity for storing large amounts of data.

Memory IC Type:

SYNCHRONOUS DRAM - Provides synchronized data transfer for high-speed performance.

Maximum Standby Current:

0.025 Amp - Ensures efficient power consumption during standby mode.

Refresh Cycles:

8192 - Supports frequent data refresh for reliable operation.

Interleaved Burst Length:

1,2,4,8 - Allows for efficient data access in interleaved bursts.

Maximum Access Time:

5 ns - Enables quick data retrieval for improved system performance.

Technical Specifications

DRAM AS4C16M16SA-6TCN attributes and parameters. Explore more DRAM devices from Alliance Memory

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.025 Amp

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

10.16 mm

Trade Compliance

AS4C16M16SA-6TCN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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