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MT53E512M32D2FW-046AAT:D

Micron Technology

MT53E512M32D2FW-046AAT:D by Micron Technology

Micron Technology's MT53E512M32D2FW-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact package.

Median Price

$17.095

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 95 parts In-Stock

1+ parts

$14.990

100+ parts

-

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-

10k+ parts

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95

$14.990

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-

-

Arrow

USA . 550 parts In-Stock

1+ parts

$15.050

100+ parts

-

1k+ parts

-

10k+ parts

$14.860

550

$15.050

-

-

$14.860

Verical

USA . 550 parts In-Stock

1+ parts

$15.050

100+ parts

-

1k+ parts

-

10k+ parts

$14.860

550

$15.050

-

-

$14.860

Farnell

UK . 959 parts In-Stock

1+ parts

$19.140

100+ parts

$12.210

1k+ parts

-

10k+ parts

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959

$19.140

$12.210

-

-

Mouser Electronics

USA . 509 parts In-Stock

1+ parts

$25.050

100+ parts

-

1k+ parts

$16.390

10k+ parts

$16.380

509

$25.050

-

$16.390

$16.380

Element14

Singapore . 959 parts In-Stock

1+ parts

$27.098

100+ parts

$24.933

1k+ parts

-

10k+ parts

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959

$27.098

$24.933

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 240 parts In-Stock

1+ parts

$14.298

100+ parts

-

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240

$14.298

-

-

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$22.670

100+ parts

-

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870

$22.670

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Vyrian

USA . 560 parts In-Stock

1+ parts

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560

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,486 parts In-Stock

1+ parts

$2.730

100+ parts

-

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-

10k+ parts

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1,486

$2.730

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Corohmni

South Africa . 250 parts In-Stock

1+ parts

$3.927

100+ parts

-

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250

$3.927

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Semicontronic

India . 574 parts In-Stock

1+ parts

$12.790

100+ parts

$12.470

1k+ parts

$12.406

10k+ parts

-

574

$12.790

$12.470

$12.406

-

Ampacity Inc.

Singapore . 448 parts In-Stock

1+ parts

$12.790

100+ parts

-

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448

$12.790

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Corphita

USA . 1,361 parts In-Stock

1+ parts

$13.545

100+ parts

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1,361

$13.545

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$22.217

100+ parts

-

1k+ parts

$21.328

10k+ parts

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2,000

$22.217

-

$21.328

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Continental Prestige Electronics

USA . 2,969 parts In-Stock

1+ parts

$22.670

100+ parts

-

1k+ parts

-

10k+ parts

$22.217

2,969

$22.670

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-

$22.217

Infinite Electronics LLP (Excess)

. 9,999 parts In-Stock

1+ parts

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9,999

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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Argo Parts USA

USA . 2,603 parts In-Stock

1+ parts

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100+ parts

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2,603

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Overview

Elevate your electronics with the cutting-edge MT53E512M32D2FW-046AAT:D by Micron Technology. As a leading manufacturer in the industry, Micron delivers superior quality and reliability in their DRAM products. This LPDDR4 memory module offers high performance and efficiency, making it ideal for a wide range of applications. Experience seamless multitasking and faster data processing with this innovative technology. Upgrade your devices with Micron's MT53E512M32D2FW-046AAT:D and enjoy enhanced performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and cost effectiveness to the product.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort.

Screening Level: AEC-Q100

Ensures high reliability and quality for automotive applications.

Package Shape: RECTANGULAR

Compact shape saves space and allows for efficient PCB layout.

Operating Mode: SYNCHRONOUS

Enhances performance by synchronizing data transfers with clock signals.

Self Refresh: YES

Ensures data integrity and reliability during power interruptions.

Input/Output Type: COMMON

Simplifies design and implementation for compatibility with various systems.

Nominal Supply Voltage / Vsup (V): 1.1

Provides optimal power efficiency and performance for the product.

No. of Terminals: 200

Offers a high level of connectivity for data transfer and communication.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Allows for high-density packaging and efficient heat dissipation.

Maximum Operating Temperature: 105 °C

Enables reliable operation in various environmental conditions.

Organization: 512MX32

Provides ample storage capacity for data processing and storage.

Minimum Operating Temperature: -40 °C

Ensures functionality even in extreme temperature conditions.

Terminal Position: BOTTOM

Facilitates easy connections and maintenance of the product.

Maximum Seated Height: 1.1 mm

Ideal for slim and compact device designs.

Maximum Clock Frequency (fCLK): 2136.7 MHz

Supports high-speed data processing and system performance.

Width: 10 mm

Compact size allows for easy integration into systems with space constraints.

Minimum Supply Voltage (Vsup): 1.06 V

Provides flexibility in power supply options for the product.

Length: 14.5 mm

Offers a balanced form factor for versatile system integration.

Temperature Grade: INDUSTRIAL

Suitable for rugged industrial environments and applications.

Access Mode: MULTI BANK PAGE BURST

Optimizes data access efficiency for improved system performance.

Technology: CMOS

Offers low power consumption and high reliability for the product.

Terminal Form: BALL

Ensures secure connections and reliable data transmission.

No. of Words: 536870912 words

Offers a large memory capacity for data storage and processing.

Sequential Burst Length: 16,32

Enhances data transfer efficiency and system performance.

Memory Width: 32

Supports high-speed data processing and data transfer rates.

Terminal Pitch: 0.8 mm

Provides a fine pitch for increased connectivity options.

No. of Words Code: 512M

Indicates the memory capacity of the product for efficient data handling.

Maximum Supply Voltage (Vsup): 1.17 V

Allows for a higher power supply range for flexibility in operation.

Memory Density: 17179869184 bit

Provides high-density memory storage for data-intensive applications.

Memory IC Type: LPDDR4 DRAM

Offers fast data access and processing speeds for improved system performance.

Interleaved Burst Length: 16,32

Optimizes memory access and data transfer efficiency for enhanced performance.

Technical Specifications

DRAM MT53E512M32D2FW-046AAT:D attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

Maximum Clock Frequency (fCLK):

2136.7 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

16,32

JESD-30 Code:

R-PBGA-B200

Length:

14.5 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA200,12X22,32/25

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Self Refresh:

YES

Sequential Burst Length:

16,32

Maximum Supply Voltage (Vsup):

1.17 V

Minimum Supply Voltage (Vsup):

1.06 V

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

10 mm

Trade Compliance

MT53E512M32D2FW-046AAT:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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