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MT53D1024M32D4DT-046AIT:D

Micron Technology

MT53D1024M32D4DT-046AIT:D by Micron Technology

Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.

Median Price

$48.680

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 30 parts In-Stock

1+ parts

$41.910

100+ parts

$32.030

1k+ parts

$31.000

10k+ parts

$30.990

30

$41.910

$32.030

$31.000

$30.990

Arrow

USA . 9 parts In-Stock

1+ parts

$48.680

100+ parts

-

1k+ parts

-

10k+ parts

-

9

$48.680

-

-

-

Verical

USA . 9 parts In-Stock

1+ parts

$48.680

100+ parts

-

1k+ parts

-

10k+ parts

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9

$48.680

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-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,563 parts In-Stock

1+ parts

$39.814

100+ parts

-

1k+ parts

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10k+ parts

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1,563

$39.814

-

-

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Nova Conductors

Japan . 88 parts In-Stock

1+ parts

$58.903

100+ parts

-

1k+ parts

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88

$58.903

-

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Vyrian

USA . 5,362 parts In-Stock

1+ parts

-

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5,362

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-

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Cyclops Electronics Ltd

UK . 5,160 parts In-Stock

1+ parts

-

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5,160

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-

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Rebound Electronics

UK . 2,126 parts In-Stock

1+ parts

-

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2,126

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BCID Electronics Ltd.

Israel . 2,000 parts In-Stock

1+ parts

-

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2,000

-

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Sensible Micro Corp

USA . 496 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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496

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RLX Solution Inc.

Canada . 3 parts In-Stock

1+ parts

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 317 parts In-Stock

1+ parts

$2.883

100+ parts

-

1k+ parts

-

10k+ parts

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317

$2.883

-

-

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Aztec Data Supply Inc.

USA . 1,056 parts In-Stock

1+ parts

$4.220

100+ parts

-

1k+ parts

-

10k+ parts

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1,056

$4.220

-

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AZTECH Wire

Italy . 547 parts In-Stock

1+ parts

$14.732

100+ parts

-

1k+ parts

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10k+ parts

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547

$14.732

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Semicontronic

India . 16 parts In-Stock

1+ parts

$35.620

100+ parts

$34.730

1k+ parts

$34.551

10k+ parts

-

16

$35.620

$34.730

$34.551

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Corphita

USA . 1,094 parts In-Stock

1+ parts

$37.719

100+ parts

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1,094

$37.719

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Bastille Electronics

Australia . 1,598 parts In-Stock

1+ parts

$58.900

100+ parts

$55.955

1k+ parts

-

10k+ parts

$52.421

1,598

$58.900

$55.955

-

$52.421

Continental Prestige Electronics

USA . 3,202 parts In-Stock

1+ parts

$58.903

100+ parts

-

1k+ parts

-

10k+ parts

$57.725

3,202

$58.903

-

-

$57.725

Ampacity Inc.

Singapore . 16 parts In-Stock

1+ parts

$77.530

100+ parts

-

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16

$77.530

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QUARKTWIN TECHNOLOGY LTD

USA . 13,664 parts In-Stock

1+ parts

-

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13,664

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Infinite Electronics LLP (Excess)

. 2,562 parts In-Stock

1+ parts

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100+ parts

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2,562

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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100+ parts

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500

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Argo Parts USA

USA . 397 parts In-Stock

1+ parts

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397

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Resion (Excess)

USA . 55 parts In-Stock

1+ parts

-

100+ parts

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55

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Overview

Experience the unmatched performance and reliability of Micron Technology with the MT53D1024M32D4DT-046AIT:D. As a leading manufacturer in the industry, Micron delivers top-quality DRAM products that meet the highest standards for various applications. With a focus on value and innovation, this LPDDR4 DRAM offers customers exceptional benefits such as increased speed, efficiency, and storage capacity. Trust Micron to provide you with cutting-edge technology that enhances your devices and drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable design, ideal for electronic devices.

Surface Mount: YES

Allows for easy and secure placement on circuit boards.

Screening Level: AEC-Q100

Ensures high quality and reliability for automotive applications.

Package Shape: RECTANGULAR

Offers a standardized shape for easy integration into electronic systems.

Operating Mode: SYNCHRONOUS

Enhances data transfer efficiency and speed.

Self Refresh: YES

Allows for power saving features, extending battery life in portable devices.

Input/Output Type: COMMON

Simplifies data communication between the DRAM and the rest of the system.

Nominal Supply Voltage / Vsup (V): 1.1

Provides optimal power performance for the DRAM.

No. of Terminals: 200

Offers a sufficient number of connection points for data transfer.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximizes space efficiency on circuit boards.

Maximum Operating Temperature: 95 °C

Ensures reliable performance even in high temperature environments.

Organization: 1GX32

Provides a high memory capacity for storing large amounts of data.

Minimum Operating Temperature: -40 °C

Suitable for use in a wide range of environmental conditions.

Terminal Position: BOTTOM

Facilitates easy installation and connectivity.

Maximum Seated Height: 0.95 mm

Allows for a low-profile design in compact electronic devices.

Maximum Clock Frequency (fCLK): 2136.7 MHz

Enables fast data processing and transfer speeds.

Width: 10 mm

Offers a compact form factor for space-constrained applications.

Minimum Supply Voltage (Vsup): 1.06 V

Provides stable power supply for efficient operation.

Length: 14.5 mm

Offers a balanced size for integration into various electronic systems.

Access Mode: MULTI BANK PAGE BURST

Enhances data access speed and efficiency for improved performance.

Technology: CMOS

Utilizes advanced technology for low power consumption and high speed operation.

Terminal Form: BALL

Ensures secure and reliable connections for data transfer.

No. of Words: 1073741824 words

Provides a high memory capacity for storing large amounts of data.

Sequential Burst Length: 16,32

Enhances data transfer efficiency and speed in sequential operations.

Memory Width: 32

Offers a wide memory interface for faster data transfer rates.

Terminal Pitch: 0.8 mm

Provides a standardized pitch for easy integration into electronic systems.

No. of Words Code: 1G

Indicates the capacity of the DRAM in words for easy identification.

Maximum Supply Voltage (Vsup): 1.17 V

Provides a safe operating range for the DRAM.

Memory Density: 34359738368 bit

Offers a high memory density for storing a large amount of data.

Memory IC Type: LPDDR4 DRAM

Utilizes LPDDR4 technology for enhanced performance and efficiency.

Interleaved Burst Length: 16,32

Improves data access speed and efficiency in interleaved operations.

Technical Specifications

DRAM MT53D1024M32D4DT-046AIT:D attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

Maximum Clock Frequency (fCLK):

2136.7 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

16,32

JESD-30 Code:

R-PBGA-B200

Length:

14.5 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA200,12X22,32/25

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Screening Level:

AEC-Q100

Maximum Seated Height:

.95 mm

Self Refresh:

YES

Sequential Burst Length:

16,32

Maximum Supply Voltage (Vsup):

1.17 V

Minimum Supply Voltage (Vsup):

1.06 V

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

10 mm

Trade Compliance

MT53D1024M32D4DT-046AIT:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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