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MT53E512M32D1ZW-046AIT:B

Micron Technology

MT53E512M32D1ZW-046AIT:B by Micron Technology

Micron Technology's MT53E512M32D1ZW-046AIT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features self-refresh mode, common I/O type, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption in automotive electronics and industrial devices.

Median Price

$19.910

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 160 parts In-Stock

1+ parts

$13.350

100+ parts

$11.400

1k+ parts

-

10k+ parts

-

160

$13.350

$11.400

-

-

Verical

USA . 1,307 parts In-Stock

1+ parts

$19.910

100+ parts

-

1k+ parts

-

10k+ parts

-

1,307

$19.910

-

-

-

Mouser Electronics

USA . 240 parts In-Stock

1+ parts

$118.480

100+ parts

-

1k+ parts

-

10k+ parts

-

240

$118.480

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 450 parts In-Stock

1+ parts

$15.295

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$15.295

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$19.910

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$19.910

-

-

-

Velocity Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

-

-

-

-

Vyrian

USA . 1,422 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,422

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 261 parts In-Stock

1+ parts

$2.978

100+ parts

-

1k+ parts

-

10k+ parts

-

261

$2.978

-

-

-

Aztec Data Supply Inc.

USA . 1,560 parts In-Stock

1+ parts

$3.880

100+ parts

-

1k+ parts

-

10k+ parts

-

1,560

$3.880

-

-

-

Ampacity Inc.

Singapore . 1,330 parts In-Stock

1+ parts

$13.260

100+ parts

-

1k+ parts

-

10k+ parts

-

1,330

$13.260

-

-

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Semicontronic

India . 1,167 parts In-Stock

1+ parts

$13.260

100+ parts

$12.928

1k+ parts

$12.862

10k+ parts

-

1,167

$13.260

$12.928

$12.862

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Corphita

USA . 2,464 parts In-Stock

1+ parts

$14.490

100+ parts

-

1k+ parts

-

10k+ parts

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2,464

$14.490

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-

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Continental Prestige Electronics

USA . 7,372 parts In-Stock

1+ parts

$19.910

100+ parts

-

1k+ parts

-

10k+ parts

$19.512

7,372

$19.910

-

-

$19.512

Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

$19.910

100+ parts

$18.914

1k+ parts

-

10k+ parts

$17.720

500

$19.910

$18.914

-

$17.720

Argo Parts USA

USA . 574 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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574

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Robosynatics

Brazil . 350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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350

-

-

-

-

Overview

Discover the cutting-edge performance and reliability of the MT53E512M32D1ZW-046AIT:B by Micron Technology. As a leader in the industry, Micron Technology delivers top-of-the-line DRAM modules that offer unparalleled speed and efficiency for a wide range of applications. With advanced features such as synchronous operation and self-refresh capabilities, this memory module ensures seamless performance in demanding environments. Experience the value and benefits of Micron's high-quality products, designed to enhance your system's performance and productivity. Upgrade to Micron Technology for superior memory solutions that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the DRAM chip, ensuring a longer lifespan.

Surface Mount: YES

Easy to integrate into various electronic devices or circuit boards.

Operating Mode: SYNCHRONOUS

Allows for efficient data transfer and processing.

Nominal Supply Voltage / Vsup (V): 1.1

Offers a stable power supply for optimal performance.

Maximum Clock Frequency (fCLK): 2133 MHz

High clock frequency allows for faster data access and processing speeds.

Technology: CMOS

Utilizes low power consumption and high noise immunity, making it energy efficient and reliable.

Memory IC Type: LPDDR4 DRAM

LPDDR4 technology provides faster data transfer rates and lower power consumption compared to previous versions.

Technical Specifications

DRAM MT53E512M32D1ZW-046AIT:B attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

Maximum Clock Frequency (fCLK):

2133 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

16,32

JESD-30 Code:

R-PBGA-B200

Length:

14.5 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA200,12X20,32/25

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.05 mm

Self Refresh:

YES

Sequential Burst Length:

16,32

Maximum Supply Voltage (Vsup):

1.17 V

Minimum Supply Voltage (Vsup):

1.06 V

Nominal Supply Voltage / Vsup (V):

1.1

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

10 mm

Trade Compliance

MT53E512M32D1ZW-046AIT:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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