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NT6DM32M16BD-T1

Nanya Technology

NT6DM32M16BD-T1 by Nanya Technology

NT6DM32M16BD-T1 by Nanya Technology is a DDR1 DRAM with 32MX16 organization, 16-bit memory width, and 536870912 bit memory density. It operates synchronously at 1.8V with self-refresh capability. Ideal for applications requiring fast access times and high memory capacity in compact devices.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Rutronik

Germany . 2,000 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Vyrian

USA . 207 parts In-Stock

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207

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DF Sales Co.

USA . 16 parts In-Stock

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DF Sales Co.

USA . 16 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 606 parts In-Stock

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$5.495

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AZTECH Wire

Italy . 207 parts In-Stock

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$13.207

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Continental Prestige Electronics

USA . 5,582 parts In-Stock

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Kepictronics

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Aranea Global

USA . 500 parts In-Stock

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500

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Argo Parts USA

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Overview

Elevate your technology with the NT6DM32M16BD-T1 by Nanya Technology, a leading manufacturer in the DRAM category. This innovative product offers unparalleled quality and reliability, making it perfect for a wide range of applications. With a nominal supply voltage of 1.8V and self-refresh capabilities, this DDR1 DRAM delivers seamless performance and efficiency. Upgrade your devices with the NT6DM32M16BD-T1 and experience the value and advantages that only Nanya Technology can provide. Innovate with confidence and stay ahead of the curve with this cutting-edge memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures data is transferred efficiently and in sync with the system clock, improving overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V reduces power consumption, making it an energy-efficient choice for battery-operated devices.

No. of Terminals: 60

With 60 terminals, this product offers a high level of connectivity for seamless data transmission.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and arrangement on circuit boards, optimizing space utilization.

Self Refresh: YES

The self-refresh capability helps in maintaining data integrity during power interruptions, ensuring reliability in critical applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product can withstand harsh environmental conditions, increasing its durability and longevity.

Organization: 32MX16

The 32MX16 organization provides a high memory capacity, suitable for demanding applications that require large data storage.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25°C ensures the product can function reliably in cold environments, making it versatile for various applications.

Terminal Position: BOTTOM

The bottom terminal position simplifies the installation process and enhances connectivity, ensuring a secure and stable connection.

Maximum Seated Height: 1 mm

The low maximum seated height of 1mm allows for a compact design, ideal for slim and space-constrained devices.

Width: 8 mm

The narrow width of 8mm facilitates easy integration into tight spaces, making it suitable for miniaturized electronics.

Minimum Supply Voltage (Vsup): 1.7 V

The low minimum supply voltage of 1.7V ensures compatibility with a wide range of power sources, increasing flexibility in system design.

Length: 9 mm

The short length of 9mm enables a compact footprint, saving valuable space on circuit boards.

Access Mode: FOUR BANK PAGE BURST

The four bank page burst access mode enhances data transfer rates and overall system efficiency, ideal for high-performance applications.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high speed, making this product energy-efficient and reliable.

Terminal Form: BALL

The ball terminal form provides a reliable and secure connection, ensuring stable data transmission in demanding operating conditions.

No. of Words: 33554432 words

With a high number of words, this product offers ample storage capacity for data-intensive applications.

Memory Width: 16

The memory width of 16 bits allows for efficient data processing and retrieval, enhancing system performance.

Terminal Pitch: 0.8 mm

The small terminal pitch of 0.8mm enables high-density packaging, making it suitable for compact electronic devices.

No. of Words Code: 32M

The 32M words code signifies a large memory capacity, ideal for handling extensive data loads in industrial or enterprise settings.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage of 1.95V provides a safe operating range, ensuring the product's longevity and reliability.

Memory Density: 536870912 bit

The high memory density of 536870912 bits offers substantial data storage capabilities for demanding applications.

Memory IC Type: DDR1 DRAM

Utilizing DDR1 DRAM technology provides high-speed data processing and reliability, making this product suitable for advanced computing needs.

Maximum Access Time: 5 ns

With a maximum access time of 5ns, this product delivers rapid data retrieval and response times, ideal for time-sensitive applications.

Technical Specifications

DRAM NT6DM32M16BD-T1 attributes and parameters. Explore more DRAM devices from Nanya Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B60

Length:

9 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

60

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

NT6DM32M16BD-T1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

Manufacturer Highlights

Nanya Technology

Nanya Technology holds innovation as our core value which is realized in the company’s dedication to research and develop, design, manufacture, marketing, and sales of Dynamic Random Access Memory (DRAM). Nanya’s commitment to research and development has enabled the company to accumulate extensive DRAM expertise and intellectual property. As a true leader in corporate citizenship, Nanya has proactively implemented green manufacturing technology. Nanya has harnessed the power of artificial intelligence (AI) to significantly upgrade production capacity and efficiency. The result is a company that provides industry leading DRAM solutions in a way that is environmentally friendly to our planet

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