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MT48H16M32LFB5-6IT:C

Micron Technology

MT48H16M32LFB5-6IT:C by Micron Technology

Micron Technology's MT48H16M32LFB5-6IT:C is a 16MX32 DDR DRAM with 16777216 words and 536870912 bit memory density. It operates at 166 MHz clock frequency, has a very thin profile, and supports common I/O type. Ideal for industrial applications requiring fast access times and low standby current consumption.

Median Price

$8.925

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 939 parts In-Stock

1+ parts

$6.150

100+ parts

$5.200

1k+ parts

$4.870

10k+ parts

-

939

$6.150

$5.200

$4.870

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Mouser Electronics

USA . 919 parts In-Stock

1+ parts

$8.500

100+ parts

-

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919

$8.500

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Element14

Singapore . 720 parts In-Stock

1+ parts

$9.350

100+ parts

$7.450

1k+ parts

$7.060

10k+ parts

-

720

$9.350

$7.450

$7.060

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Farnell

UK . 221 parts In-Stock

1+ parts

$9.590

100+ parts

-

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221

$9.590

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EBV Elektronik

Germany . 1,440 parts In-Stock

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1,440

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Verical

USA . 938 parts In-Stock

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938

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Distributors (In-Stock)

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Digiode

USA . 2,136 parts In-Stock

1+ parts

$6.486

100+ parts

-

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2,136

$6.486

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$6.902

100+ parts

-

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10

$6.902

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Chip Stock

USA . 15,300 parts In-Stock

1+ parts

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15,300

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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Vyrian

USA . 2,227 parts In-Stock

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2,227

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Sea View Technologies

USA . 800 parts In-Stock

1+ parts

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800

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NAC Semi

USA . 768 parts In-Stock

1+ parts

-

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$6.300

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768

-

$6.300

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Component Sense

UK . 472 parts In-Stock

1+ parts

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472

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Bristol Electronics

USA . 253 parts In-Stock

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253

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Atlantic Semiconductor

USA . 253 parts In-Stock

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253

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J2 Sourcing AB

Sweden . 22 parts In-Stock

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22

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South Electronics

USA . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,303 parts In-Stock

1+ parts

$4.420

100+ parts

-

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-

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2,303

$4.420

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Corphita

USA . 1,119 parts In-Stock

1+ parts

$6.144

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1,119

$6.144

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Continental Prestige Electronics

USA . 682 parts In-Stock

1+ parts

$6.570

100+ parts

-

1k+ parts

-

10k+ parts

$6.439

682

$6.570

-

-

$6.439

Component Stockers USA

USA . 710 parts In-Stock

1+ parts

$6.730

100+ parts

$5.280

1k+ parts

$4.590

10k+ parts

-

710

$6.730

$5.280

$4.590

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$6.764

100+ parts

-

1k+ parts

$6.493

10k+ parts

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1,000

$6.764

-

$6.493

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Andel Nordic

Denmark . 1,037 parts In-Stock

1+ parts

$10.991

100+ parts

-

1k+ parts

$10.552

10k+ parts

$10.552

1,037

$10.991

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$10.552

$10.552

Perfect Parts

USA . 44,378 parts In-Stock

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44,378

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Infinite Electronics LLP (Excess)

. 7,745 parts In-Stock

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7,745

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A-Z Elektronik GmbH

Germany . 6,272 parts In-Stock

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6,272

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Kepictronics

USA . 3,850 parts In-Stock

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3,850

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Futuretech Components

Singapore . 790 parts In-Stock

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790

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Speed Components Ltd (Excess)

Israel . 720 parts In-Stock

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720

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GreenTree Electronics

Israel . 684 parts In-Stock

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684

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Argo Parts USA

USA . 277 parts In-Stock

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277

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Formix International (Excess)

India . 139 parts In-Stock

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139

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Overview

Experience unmatched speed and reliability with the MT48H16M32LFB5-6IT:C by Micron Technology. As a leading manufacturer in the industry, Micron ensures top-notch quality and performance in their DRAM products. With its wide range of applications, this DDR DRAM is perfect for industrial settings where fast data processing is crucial. Benefit from its low power consumption and high storage capacity, providing you with efficient and seamless operations. Upgrade your systems today with Micron's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable.

Surface Mount: YES

The surface mount option enables easy installation and saves space on the PCB.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on the circuit board.

Operating Mode: SYNCHRONOUS

The synchronous operation mode ensures precise timing and data transfer.

Self Refresh: YES

The self-refresh feature helps in maintaining data integrity during power interruptions.

Nominal Supply Voltage / Vsup (V): 1.8

The 1.8V supply voltage ensures low power consumption and efficient performance.

Power Supplies (V): 1.8

The consistent 1.8V power supply enhances stability and reliability.

No. of Terminals: 90

The abundance of terminals provides a secure connection and improves signal transmission.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array package style with a thin profile and fine pitch offers high-density mounting options.

Maximum Operating Temperature: 85 °C

The high operating temperature range makes this product suitable for industrial applications.

Technical Specifications

DRAM MT48H16M32LFB5-6IT:C attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B90

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8

Maximum Standby Current:

.00001 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

105 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

MT48H16M32LFB5-6IT:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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