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IS42S32800J-6BLI-TR

Integrated Silicon Solution

IS42S32800J-6BLI-TR by Integrated Silicon Solution

IS42S32800J-6BLI-TR by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package.

Median Price

$7.810

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$7.810

100+ parts

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600

$7.810

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Vyrian

USA . 2,335 parts In-Stock

1+ parts

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2,335

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 158 parts In-Stock

1+ parts

$2.905

100+ parts

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158

$2.905

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Aztec Data Supply Inc.

USA . 3,294 parts In-Stock

1+ parts

$5.594

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3,294

$5.594

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Component Stockers USA

USA . 2,420 parts In-Stock

1+ parts

$7.110

100+ parts

$5.740

1k+ parts

$5.110

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2,420

$7.110

$5.740

$5.110

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$7.654

100+ parts

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1k+ parts

$7.348

10k+ parts

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1,000

$7.654

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$7.348

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Continental Prestige Electronics

USA . 6,683 parts In-Stock

1+ parts

$7.810

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$7.654

6,683

$7.810

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$7.654

GreenTree Electronics

Israel . 10,000 parts In-Stock

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10,000

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Eastek

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 3,129 parts In-Stock

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3,129

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Perfect Parts

USA . 2,412 parts In-Stock

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2,412

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Overview

Experience seamless performance and reliability with the IS42S32800J-6BLI-TR by Integrated Silicon Solution, a leading manufacturer in the industry. As a high-quality DRAM product, this memory module offers exceptional value and benefits for a wide range of applications. With its advanced technology and innovative features, customers can enjoy fast data access and efficient processing, making it ideal for industrial use. Upgrade your system with this top-notch solution and elevate your performance to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the DRAM, making it suitable for various electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination within the memory system, leading to efficient data transfer.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage for stable and reliable performance of the DRAM.

No. of Terminals: 90

Sufficient number of terminals for connecting the DRAM to other components in the system.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, ideal for industrial applications where heat can be a concern.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor technology offers low power consumption and high noise immunity, enhancing the efficiency of the DRAM.

Technical Specifications

DRAM IS42S32800J-6BLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B90

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

32

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

8 mm

Trade Compliance

IS42S32800J-6BLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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