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NT5TU64M16HG-ACH

Nanya Technology

NT5TU64M16HG-ACH by Nanya Technology

NT5TU64M16HG-ACH by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Vyrian

USA . 552 parts In-Stock

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552

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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AZTECH Wire

Italy . 236 parts In-Stock

1+ parts

$12.584

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$12.584

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Continental Prestige Electronics

USA . 6,192 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Argo Parts USA

USA . 388 parts In-Stock

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Perfect Parts

USA . 234 parts In-Stock

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Overview

Experience the power of cutting-edge technology with the NT5TU64M16HG-ACH by Nanya Technology. As a leading manufacturer in the industry, Nanya Technology delivers top-quality DRAM products that offer unparalleled performance and reliability. Perfect for a variety of applications, this DDR2 DRAM memory module boasts a wide range of advantages, including fast access times, low power consumption, and seamless integration. Trust Nanya Technology to provide you with the best-in-class memory solutions that meet your needs and exceed your expectations. Unlock the potential of your devices with the NT5TU64M16HG-ACH today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness, making the product suitable for a wide range of applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving time and effort during the manufacturing process.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred in a controlled and efficient manner, improving overall performance and reliability.

Nominal Supply Voltage / Vsup (V): 1.8

A standard nominal supply voltage of 1.8V ensures compatibility with a wide range of systems and reduces power consumption.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array package style with a thin profile and fine pitch allows for high-density mounting, saving valuable board space and enabling compact designs.

Temperature Grade: INDUSTRIAL

With an industrial temperature grade, this product can operate reliably in a wide range of temperature conditions, making it suitable for harsh environments.

Memory IC Type: DDR2 DRAM

Being a DDR2 DRAM, this memory module offers faster data transfer rates and improved efficiency compared to older DRAM technologies.

Technical Specifications

DRAM NT5TU64M16HG-ACH attributes and parameters. Explore more DRAM devices from Nanya Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.4 ns

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B84

Length:

12.5 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

84

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

NT5TU64M16HG-ACH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

Manufacturer Highlights

Nanya Technology

Nanya Technology holds innovation as our core value which is realized in the company’s dedication to research and develop, design, manufacture, marketing, and sales of Dynamic Random Access Memory (DRAM). Nanya’s commitment to research and development has enabled the company to accumulate extensive DRAM expertise and intellectual property. As a true leader in corporate citizenship, Nanya has proactively implemented green manufacturing technology. Nanya has harnessed the power of artificial intelligence (AI) to significantly upgrade production capacity and efficiency. The result is a company that provides industry leading DRAM solutions in a way that is environmentally friendly to our planet

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