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NT5TU64M16DG-3CI

Nanya Technology

NT5TU64M16DG-3CI by Nanya Technology

NT5TU64M16DG-3CI by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for industrial applications requiring high memory density and fast access times.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 362 parts In-Stock

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362

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Nova Conductors

Japan . 40 parts In-Stock

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AZTECH Wire

Italy . 483 parts In-Stock

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$13.293

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483

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Continental Prestige Electronics

USA . 6,530 parts In-Stock

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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Argo Parts USA

USA . 3,000 parts In-Stock

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Kepictronics

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Bastille Electronics

Australia . 15 parts In-Stock

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Overview

Get ready to experience top-notch performance with the NT5TU64M16DG-3CI by Nanya Technology. As a leading manufacturer in the industry, Nanya Technology has crafted this DDR2 DRAM module with precision and expertise, ensuring reliability and efficiency. Ideal for a wide range of applications, this memory module offers seamless multitasking and smooth operation for your devices. Upgrade your system today and enjoy the benefits of faster speeds, increased productivity, and improved overall performance. Choose Nanya Technology for quality you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and cost-effectiveness, making it a reliable choice for various applications.

Surface Mount: YES

With surface mount capability, this product can easily be attached to circuit boards, saving space and improving overall efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into existing designs and layouts, enhancing compatibility and flexibility.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfer, leading to faster performance and improved system reliability.

Self Refresh: YES

The self-refresh feature helps conserve power and maintain data integrity during idle periods, resulting in energy efficiency and data consistency.

Nominal Supply Voltage / Vsup (V): 1.8

The 1.8V supply voltage provides a balance between performance and power consumption, making it suitable for a wide range of applications.

Power Supplies (V): 1.8

Having a single supply voltage simplifies system design and reduces costs associated with multiple power sources, making it user-friendly.

No. of Terminals: 84

The high number of terminals allows for more data transfer channels, enhancing overall speed and efficiency in data processing.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

This package style offers a compact design and high pin density, enabling high-speed data transmission and optimal space utilization.

Maximum Operating Temperature: 95 °C

With a high operating temperature range, this product can withstand harsh environmental conditions, ensuring reliable performance in various environments.

Technical Specifications

DRAM NT5TU64M16DG-3CI attributes and parameters. Explore more DRAM devices from Nanya Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.45 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

333 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B84

Length:

13 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

84

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA84,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.009 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

9 mm

Trade Compliance

NT5TU64M16DG-3CI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

Manufacturer Highlights

Nanya Technology

Nanya Technology holds innovation as our core value which is realized in the company’s dedication to research and develop, design, manufacture, marketing, and sales of Dynamic Random Access Memory (DRAM). Nanya’s commitment to research and development has enabled the company to accumulate extensive DRAM expertise and intellectual property. As a true leader in corporate citizenship, Nanya has proactively implemented green manufacturing technology. Nanya has harnessed the power of artificial intelligence (AI) to significantly upgrade production capacity and efficiency. The result is a company that provides industry leading DRAM solutions in a way that is environmentally friendly to our planet

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