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IS42S32400F-7TL

Integrated Silicon Solution

IS42S32400F-7TL by Integrated Silicon Solution

IS42S32400F-7TL by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, operating at 143MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

Median Price

$3.808

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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RS (Exports)

UK . 78 parts In-Stock

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$3.330

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$2.720

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$2.620

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78

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Chip1Stop

Japan . 210 parts In-Stock

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$4.097

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$3.213

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DigiKey

USA . 355 parts In-Stock

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$4.950

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Verical

USA . 16 parts In-Stock

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$3.518

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$2.770

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Distributors (In-Stock)

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Nova Conductors

Japan . 870 parts In-Stock

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$3.354

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Chip Stock

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Vyrian

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Bristol Electronics

USA . 2,887 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 373 parts In-Stock

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Cyclops Electronics Ltd

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Greenchips

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ComSIT Distribution GmbH

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EMSNET

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$3.186

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$2.899

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$2.613

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Aranea Global

USA . 100 parts In-Stock

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$3.287

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$3.155

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Continental Prestige Electronics

USA . 1,153 parts In-Stock

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Argo Parts USA

USA . 282 parts In-Stock

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Component Stockers USA

USA . 21 parts In-Stock

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Assy Fe

Spain . 4,310 parts In-Stock

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S.R.D Solutions

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Perfect Parts

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Alle Elektronik GmbH

Germany . 1,424 parts In-Stock

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GreenTree Electronics

Israel . 756 parts In-Stock

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Eastek

USA . 648 parts In-Stock

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Allen Electronics Distributors

USA . 205 parts In-Stock

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$2.926

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ChipstoGo Electronic ltd

UK . 82 parts In-Stock

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Overview

Elevate your electronics with the IS42S32400F-7TL by Integrated Silicon Solution. As a leader in DRAM technology, ISS guarantees top-notch quality and reliability in every product. Whether you’re designing a cutting-edge computer system or enhancing the performance of your existing devices, this Synchronous DRAM will exceed your expectations. With common input/output type, self refresh capability, and a compact design, this memory chip offers seamless integration and superior speed. Upgrade your devices today with the IS42S32400F-7TL and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness.

Surface Mount: YES

Allows for easy and efficient installation onto circuit boards.

Operating Mode: SYNCHRONOUS

Enhances data transfer speed and efficiency.

Nominal Supply Voltage / Vsup (V): 3.3

Efficient power consumption while maintaining optimal performance.

Maximum Operating Temperature: 70 °C

Ensures stability and reliability under various operating conditions.

Memory IC Type: SYNCHRONOUS DRAM

Offers high-speed data access and processing capabilities.

Technical Specifications

DRAM IS42S32400F-7TL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G86

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

32

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

86

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP86,.46,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

160 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

IS42S32400F-7TL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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